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This page is a summary of: EFFECT OF POST-DEPOSITION ANNEALING IN FORMING GAS ON STRUCTURAL AND ELECTRICAL PROPERTIES OF SOL–GEL DERIVED SiO 2 THICK FILM ON 4H–SiC , International Journal of Modern Physics B, September 2010, World Scientific Pub Co Pte Lt,
DOI: 10.1142/s0217979210056578.
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