What is it about?
Magnetron sputtering and rapid thermal annealing were used for fabrication of Trilayer MOS capacitors formed of: gate HfO2 / floating gate of Ge nanocrystals in HfO2 / tunnel HfO2 / Si substrate. Capacitance voltage measurements showed that Ge nanocrystals are the most important charge storage centres in our structure. The possibility to use these trilayer MOS capacitors as dosimeters was investigated, and the sensitivity to particle irradiation was extracted.
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Why is it important?
The interest for the detection and the measurement of ionizing radiation is related to a large variety of applications, e.g. medicine, and in particular radiotherapy, manned space missions, nuclear waste management, nuclear power stations, military sector and research.
Perspectives
In the present paper we report for the first time on the possibility to use FG capacitor with Ge NCs embedded in HfO2 as a sensing device for ionizing radiation.
drd. Ovidiu Cojocaru
National Institute of Materials Physics
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This page is a summary of: MOS Dosimeter Based on Ge Nanocrystals in Hfo2, October 2018, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/smicnd.2018.8539769.
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