What is it about?
We studied the electrical and photoconductive properties of multilayers annealed by RTA and post-annealing hydrogenated. The current - temperature dependence reveals the conduction mechanisms in GeSi NCs / TiO 2 multilayers RTA annealed, i.e. thermal activation of carriers to extended states (0.31 eV activation energy), the electron tunneling mechanism to nearest neighbors ( T-1/2 behavior) and Mott variable range hopping (T -1/4 dependence). The photocurrent spectra made on multilayers structures hydrogenated for 10, 20 and 30 min evidence the photocurrent increasing up to 50%, showing that the hydrogenation is a suitable treatment for enhancing photocurrent.
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Why is it important?
Films and multilayers of GeSi NCs embedded in oxides (TiO2, SiO2) prepared by magnetron sputtering and subsequent thermal annealing are promising materials for applications in optical sensors for selective spectral windows in visible and near infrared range.
Perspectives
In this paper, we report on enhancing the photocurrent in multilayers GeSi NCs / TiO2 by using optimal preparation parameters and hydrogenation treatment in plasma performed post-annealing.
drd. Ovidiu Cojocaru
National Institute of Materials Physics
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This page is a summary of: Enhanced Photocurrent in GeSi NCs / TiO2Multilayers, October 2018, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/smicnd.2018.8539740.
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