What is it about?
This paper presents a transimpedance amplifier (TIA) which was optimized for detecting very weak signals generated for microscopy imaging in the scanning electron microscope (SEM).
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Why is it important?
The circuit, connected to an integrated photodiode with a junction capacitance of 10 pF, exhibited a transimpedance gain of 107.3 dB, a bandwidth of 12.5 MHz, an input-referred noise of 3.54 × 10−12A/√Hz, and an SNR of 8, which manifested that the design is suitable for integration into a multipixel CMOS photon detector to perform intelligent sensing of secondary electrons in the SEM.
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This page is a summary of: Design of Low-Noise High-Gain CMOS Transimpedance Amplifier for Intelligent Sensing of Secondary Electrons, IEEE Sensors Journal, October 2015, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/jsen.2015.2452934.
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