Publication
30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface
Jiho Cho, D. Chris Kang, Jongyeol Park, Sang-Wan Nam, Jung-Ho Song, Bong-Kil Jung, Jaedoeg Lyu, Hogil Lee, Won-Tae Kim, Hongsoo Jeon, Sunghoon Kim, In-Mo Kim, Jae-Ick Son, Kyoungtae Kang, Sang-Won Shim, JongChul Park, Eungsuk Lee, Kyung-Min Kang, Sang-Won Park, Jaeyun Lee, Seung Hyun Moon, Pansuk Kwak, ByungHoon Jeong, Cheon An Lee, Kisung Kim, Junyoung Ko, Tae-Hong Kwon, Junha Lee, Yohan Lee, Chaehoon Kim, Myeong-Woo Lee, Jeong-yun Yun, HoJun Lee, Yonghyuk Choi, Sanggi Hong, JongHoon Park, Yoonsung Shin, Hojoon Kim, Hansol Kim, Chiweon Yoon, Dae Seok Byeon, Seungjae Lee, Jin-Yub Lee, Jaihyuk Song
February 2021, Institute of Electrical & Electronics Engineers (IEEE)
DOI: 10.1109/isscc42613.2021.9366054