Publication
13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate
Doo-Hyun Kim, Hyunggon Kim, Sungwon Yun, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung-Hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kanabin Lee, Minseok Kim, Joonsoo Kwon, Jonghoo Jo, Sehwan Park, Jiyoon Park, Jisoo Cho, Sohyun Park, Garam Kim, Jinbae Bang, Heejin Kim, Jongeun Park, Deokwoo Lee, Seonyong Lee, Hwajun Jang, Han-Jun Lee, Donghyun Shin, Jungmin Park, Jungkwan Kim, Jongmin Kim, Kichang Jang, II Han Park, Seuna Hyun Moon, Myung-Hoon Choi, Pansuk Kwak, Joo-Yona Park, Youngdon Choi, Sang-Lok Kim, Seungjae Lee, Dongku Kang, Jeong-Don Lim, Dae-Seok Byeon, Kiwhan Song, Junghwan Choi, Sang Joon Hwang, Jaeheon Jeong
February 2020, Institute of Electrical & Electronics Engineers (IEEE)
DOI: 10.1109/isscc19947.2020.9063053