Publication
A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput
Seungjae Lee, Seungjae Lee, Seungjae Lee, Chulbum Kim, Chulbum Kim, Chulbum Kim, Minsu Kim, Minsu Kim, Minsu Kim, Sung-min Joe, Sung-min Joe, Sung-min Joe, Joonsuc Jang, Joonsuc Jang, Joonsuc Jang, Seungbum Kim, Seungbum Kim, Seungbum Kim, Kangbin Lee, Kangbin Lee, Kangbin Lee, Jisu Kim, Jisu Kim, Jisu Kim, Jiyoon Park, Jiyoon Park, Jiyoon Park, Han-Jun Lee, Han-Jun Lee, Han-Jun Lee, Minseok Kim, Minseok Kim, Minseok Kim, Seonyong Lee, Seonyong Lee, Seonyong Lee, SeonGeon Lee, SeonGeon Lee, SeonGeon Lee, Jinbae Bang, Jinbae Bang, Jinbae Bang, Dongjin Shin, Dongjin Shin, Dongjin Shin, Hwajun Jang, Hwajun Jang, Hwajun Jang, Deokwoo Lee, Deokwoo Lee, Deokwoo Lee, Nahyun Kim, Nahyun Kim, Nahyun Kim, Jonghoo Jo, Jonghoo Jo, Jonghoo Jo, Jonghoon Park, Jonghoon Park, Jonghoon Park, Sohyun Park, Sohyun Park, Sohyun Park, Youngsik Rho, Youngsik Rho, Youngsik Rho, Yongha Park, Yongha Park, Yongha Park, Ho-joon Kim, Ho-joon Kim, Ho-joon Kim, Cheon An Lee, Cheon An Lee, Cheon An Lee, Chungho Yu, Chungho Yu, Chungho Yu, Youngsun Min, Youngsun Min, Youngsun Min, Moosung Kim, Moosung Kim, Moosung Kim, Kyungmin Kim, Kyungmin Kim, Kyungmin Kim, Seunghyun Moon, Seunghyun Moon, Seunghyun Moon, Hyunjin Kim, Hyunjin Kim, Hyunjin Kim, Youngdon Choi, Youngdon Choi, Youngdon Choi, YoungHwan Ryu, YoungHwan Ryu, YoungHwan Ryu, Jinwon Choi, Jinwon Choi, Jinwon Choi, Minyeong Lee, Minyeong Lee, Minyeong Lee, Jungkwan Kim, Jungkwan Kim, Jungkwan Kim, Gyo Soo Choo, Gyo Soo Choo, Gyo Soo Choo, Jeong-Don Lim, Jeong-Don Lim, Jeong-Don Lim, Dae-Seok Byeon, Dae-Seok Byeon, Dae-Seok Byeon, Kiwhan Song, Kiwhan Song, Kiwhan Song, Ki-Tae Park, Ki-Tae Park, Ki-Tae Park, Kye-hyun Kyung, Kye-hyun Kyung, Kye-hyun Kyung
February 2018, Institute of Electrical & Electronics Engineers (IEEE)
DOI: 10.1109/isscc.2018.8310323