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This page is a summary of: Silicon-Germanium-Tin (SiGeSn) Source and Drain Stressors formed by Sn Implant and Laser Annealing for Strained Silicon-Germanium Channel P-MOSFETs, January 2007, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/iedm.2007.4418882.
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