What is it about?
The present paper describes a new method, called charge-extraction technique, for studying the surface states in MOS devices. This new technique utilizes the substrate current arising from the non-steady-state emission of carriers from the surface states instead of that arising from their steady-state re-combination as utilized in the charge-pumping method and this is achieved by confining the amplitude of the gate-voltage signal to such a magnitude that the surface region of the device does not cross the depletion limits.
Featured Image
Photo by Michael Dziedzic on Unsplash
Why is it important?
A new theoretical model is developed for the present case which predicts the occurrence of a maximum value of the substrate current at a certain optimum frequency of the applied gate-voltage signal. Experimental measurements have been found quite in conformity with the theoretical model.
Perspectives
Our perspective is to confirm this maximum substrate current and the corresponding optimum frequency, obtained in this work can serve as more handy and precise parameters for the determination of the surface states.
Pr Hamid Bentarzi
Universite M'Hamed Bougara Boumerdes
Read the Original
This page is a summary of: Charge-extraction technique for studying the surface states in MOS devices, IEEE Transactions on Electron Devices, May 1993, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/16.210200.
You can read the full text:
Contributors
The following have contributed to this page
