What is it about?

This work is about the measurement of the electronic band gap of hexagonal boron nitride by scanning tunneling spectroscopy and its relation to luminescence measurements from the excitonic emission and defect related emissions. We could determine the exciton binding energy, that is, the energy of the bounding between electrons and holes in h-BN, and its value is 0.7 eV, which is much higher than usual semiconductors.

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Why is it important?

The exciton binding energy determines to great extent the quantum efficiency of light emitting materials and this is the first measurement of this kind.

Perspectives

This study was very challenging due to the high band gap of h-BN and was our first work making cathodoluminescence inside our STM. It was very rewarding to publish these results and show that STM can be used to better understand h-BN.

Dr Luiz Fernando Zagonel
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This page is a summary of: Band gap measurements of monolayer h-BN and insights into carbon-related point defects, 2D Materials, July 2021, Institute of Physics Publishing,
DOI: 10.1088/2053-1583/ac0d9c.
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