What is it about?

Strain-resistance transducers have been omnipresent in applications where the monitoring and control of the deformation is necessary. Here, we present an active element (thin film) with the gauge factor exceeding up-to-then-published values by two orders of magnitude.

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Why is it important?

The colossal strain-resistance transduction of the presented active element arises from the formation of cracks. Our approach suggests an alternative way for nanostructuring of active elements. We also argue the appropriateness of the traditionally defined gauge factor for nanostructured active elements with the response based on the tunnelling current mechanism.

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This page is a summary of: Cyclopean gauge factor of the strain-resistance transduction of indium oxide films, IOP Conference Series Materials Science and Engineering, March 2016, Institute of Physics Publishing,
DOI: 10.1088/1757-899x/108/1/012043.
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