This shareable PDF can be hosted on any platform or network and is fully compliant with publisher copyright.
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
This page is a summary of: Compositional dependence of the direct and indirect band gaps in Ge1−ySnyalloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic andn-type materials, Semiconductor Science and Technology, October 2014, Institute of Physics Publishing,
DOI: 10.1088/0268-1242/29/11/115028.
You can read the full text:
The following have contributed to this page
