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This page is a summary of: Fabrication and characterization of tensile In 0.3 Al 0.7 As barrier and compressive In 0.7 Ga 0.3 As channel pHEMTs having extremely low gate leakage for low-noise applications , Journal of Physics D Applied Physics, June 2013, Institute of Physics Publishing,
DOI: 10.1088/0022-3727/46/26/264002.
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