What is it about?
Hole transport in p-GaN/AlGaN/GaN has been studied from the measured electrical data and device perspective. Our analysis shows the coexistence of thermionic emission and space charge limited transport depending on the applied bias and temperature.
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Why is it important?
Previously reported results focused on material aspects such as mobility and contact-mediated transport of carriers in p-GaN devices. However, this cannot explain the measured non-linear I-V characteristics. In this letter, we present an experimental and theoretical analysis of the hole transport mechanism in p-GaN/AlGaN/UID GaN heterostructures under different voltage and temperature conditions. Such a comprehensive device-based study of the current conduction mechanism in such heterostructures is required for the understanding of the fundamental hole transport physics and will have implications for their performance optimization.
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This page is a summary of: Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure, Applied Physics Letters, June 2024, American Institute of Physics,
DOI: 10.1063/5.0203344.
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