What is it about?
Many researchers studied the activation energies of unintentionally doped β-Ga2O3 crystals with various methods [11-13]. However, there is a lack of systematic research on the activation energy and deep defect of Nb-doped β-Ga2O3 single crystals. This paper reports the activation energies of shallow and deep traps of Nb-doped β-Ga2O3, revealed by temperature-dependent Hall effect, Deep-Level Transient Spectroscopy (DLTS), and photoluminescence spectra.
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Why is it important?
β-Ga2O3 single crystals have been a remarkable success in the technology universe, such as manufacturing deep ultraviolet detectors and metal-semiconductor field-effect transistors with good performance [5-7]. This noteworthy success lies in its uniqueness in the combination of materials properties such as a wide bandgap of 4.7–4.9 eV for a large electrical breakdown field, low cost, high quality, and volume production of large single-crystal β-Ga2O3 substrates can be achieved.
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This page is a summary of: Conduction mechanism and shallow donor defects in Nb-doped β-Ga2O3 single crystals, AIP Advances, April 2024, American Institute of Physics,
DOI: 10.1063/5.0200755.
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