What is it about?
In this work, we fabricate epitaxial thin films of SrNbO3 on LaAlO3 substrate by pulsed laser deposition. During growth we modulate the O content such that we get different stoichiometries of SNO. This modulation results in fantastic optoelectronic properties which are further explored. The insurgence of metallic to semiconductor like properties are explained by the quantum correction to conductivity. We also performed XPS, MR, AMR, and DFT studies to thoroughly investigate these properties.
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Why is it important?
It is important for such strongly correlated systems , in which the exact stabilisation of a particular stoichiometries results in different kind of desired properties. We also explained the metal to semiconductor type transition via QCC, which is a first for SNO.
Perspectives
This study undertook a huge amount of effort owing to the unknown nature of the resistivity transition. A lot of defects are introduced during thin film growth process, and different kind of defect gives rise to different phenomena. The literature on any such defect studies, while known, are still not studied in detail for strongly correlated systems such as SNO here.
Shammi Kumar
Shiv Nadar University
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This page is a summary of: Modulation of the optical and transport properties of epitaxial SrNbO3 thin films by defect engineering, Journal of Applied Physics, January 2024, American Institute of Physics,
DOI: 10.1063/5.0179267.
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