What is it about?
A nanogapped, hollow transistor is proposed and constructed through the van der Waals stacking technique, which holds the potential for applications in reliable electronics and nanofluidic and pressure sensors.
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Photo by National Cancer Institute on Unsplash
Why is it important?
This nanogapped, hollow field-effect transistor, which features a unique structure with one-side-open, one-side-encapsulated Janus semiconductor channels, can ensure the channel openness for functionality and interface passivation for reliable electronic behavior.
Perspectives
The unique hollow transistor structure holds the potential for exploiting reliable electronics, as well as nanofluid and pressure sensors.
Songlin Li
Nanjing University
Read the Original
This page is a summary of: A nanogapped hysteresis-free field-effect transistor, Frontiers in Human Neuroscience, July 2022, American Institute of Physics,
DOI: 10.1063/5.0097673.
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