Electrophysical properties of layout composition of n+CdsS-nSdS-nSi structure

What is it about?

A layered composition of n+CdS–nCdS-nSi structure was obtained. The temperature-voltage-ampere characteristic of the layered composition of n+CdS–nCdS-nSi structure was investigated. The electrophysical parameters of the layered composition of n+CdS-nCdS-nSi structure were determined. The appearance of the sublinear area on the volt-ampere characteristic is conditioned by the appearance of counter directed ambipolar diffusion of nonequilibrium carriers and their ambipolar drift.

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Why is it important?

We have obtained a layered composition based on n+CdS-nCdS-nSi structure. The technology of obtaining showed that when obtaining the film of cadmium sulfide on the surface of a silicon substrate, the film thickness depended on the temperature of the substrate and the source. The electrophysical parameters of the layered composition of n+CdS-nCdS-nSi structure were determined from the temperature volt- ampere characteristics. The determined these parameters showed that the appearance of sublinear section on the volt-ampere characteristic is due to the appearance of counter directed ambipolar diffusion of nonequilibrium carriers and their ambipolar drift. And this shows that the current transfer mechanism in this case is determined by the injection modulation of the deep impurity charge.