What is it about?
Thin ferroelectric films such as HZO require bipolar electrical cycling, named 'wakeup', applied to ensure that all ferroelectric domains can switch fully. In this paper, wakeup is achieved through gradual switching, using identical pulses which are of a voltage much lower than those typically applied. This not only reduces power consumption, but both wakeup and device operation can be achieved with identical pulses, which is desirable for on-chip applications.
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Why is it important?
Ferroelectric devices are reaching a stage of maturity where they can be used for many real-world applications, but ferroelectric characterization performed in the lab is still different from how devices should be operated on-chip. This publication aims to bridge one aspect of that.
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This page is a summary of: A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films, Applied Physics Letters, January 2022, American Institute of Physics,
DOI: 10.1063/5.0078106.
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