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This page is a summary of: Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high..., Journal of Applied Physics, July 2019, American Institute of Physics,
DOI: 10.1063/1.5049220.
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