What is it about?
The work proposes a new type of spintronic MOSFET that exploits a ferromagnetic semiconductors as a channel material. This overcomes the issue of the loss of spin polarization in spintronic MOSFET based on silicon as channel material.
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Why is it important?
Spin-MOSFET are known to allow new architectures and computational paradigms such as computing in memory. The devices based on conventional design do not work at room temperature and this limits their exploitation.
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This page is a summary of: Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds, Journal of Applied Physics, February 2018, American Institute of Physics,
DOI: 10.1063/1.5011328.
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