What is it about?
Phase change memories made of chalcogenide nanowires containing In, Sb and Te and having a diameter of 20 nm.
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Why is it important?
The nanowires show good electrical parameters for the phase change memory process.
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This page is a summary of: Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires, Applied Physics Letters, November 2016, American Institute of Physics,
DOI: 10.1063/1.4968510.
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