Nanostructured CdTe and CdTe:Cu Thin Films via DC Magnetron Sputtering

What is it about?

Researchers studied the properties of CdTe and CdTe:Cu(2%) thin films deposited using dc magnetron sputtering. The films were deposited on substrates at different growth conditions. At low growth temperature and plasma power, the morphological structures of films were not perfect. However, at high growth temperature and plasma power, the CdTe:Cu(2%) thin film had better crystallographic properties than CdTe thin film. The Energy Dispersive X-rays spectroscopy (EDX) confirmed that Cu was successfully doped on CdTe with a ratio of 2%. The full width at half maximum (FWHM) values of the thin films deposited were calculated, and the results showed that CdTe:Cu(2%) thin film has a narrower FWHM, indicating better crystallographic properties. The X-ray diffraction (XRD) results revealed that both films have a hexagonal structure, but the peak intensity and FWHM of CdTe:Cu(2%) thin film were higher, indicating better crystallinity. The UV-Vis spectrometer was used to investigate the optical properties of the thin films deposited. The transmittance spectra showed that the transmittance of CdTe:Cu(2%) film is lower than CdTe film. The bandgap energy of both CdTe and CdTe:Cu(2%) thin films was found to be 1.48 eV. In summary, the study showed that CdTe:Cu(2%) thin film has better crystallographic properties and optical properties than CdTe thin film.

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Why is it important?

Development of thin film technologies: This research contributes to the understanding of thin film deposition techniques, specifically using dc magnetron sputtering. This knowledge can aid in the development and optimization of various thin film applications in industries such as electronics, solar energy, and optoelectronics. Nanostructure properties: The study highlights the effect of growth conditions on the surface morphology and crystallographic properties of CdTe and CdTe:Cu thin films. Understanding these properties is crucial for designing and engineering materials with desired properties for specific applications. Bandgap energy: The research reveals the bandgap energy of CdTe and CdTe:Cu thin films, which is an essential parameter in determining their optical properties and potential use in solar cells or other optoelectronic devices. Key Takeaways: 1. The growth temperature and plasma power significantly influence the surface morphology and crystallographic properties of CdTe and CdTe:Cu thin films. 2. CdTe:Cu(2%) thin films exhibit better crystallographic properties compared to CdTe thin films due to the presence of Cu atoms occupying Cd vacancy sites. 3. The bandgap energy of CdTe and CdTe:Cu thin films is 1.48 eV, which is important for their potential use in optoelectronic devices such as solar cells.