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Why is it important?
This study evidences that wetting layer states are absent in metamorphic InAs/InGaAs structures. This a result of great interest as these structures are strong candidates for the development of single photon sources in the 1.3 - 1.55 µm range
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This page is a summary of: Energy states and carrier transport processes in metamorphic InAs quantum dots, Journal of Applied Physics, August 2012, American Institute of Physics,
DOI: 10.1063/1.4744981.
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