What is it about?
In this paper we revisit the definition of Q' that characterizes the strain enhanced diffusion. In particular we emphasis that is it temperature dependent. This point was not considered so far and it explains some inconsistency in previous literature. Then we revisit the case of the vacancy diffusion in silicon from both experimental and theoretical perspectives.
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Why is it important?
Our findings on the definition of Q' that characterizes the strain enhanced diffusion as applicable to any kind of materials.
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This page is a summary of: Vacancy-mediated diffusion in biaxially strained Si, Frontiers in Human Neuroscience, January 2011, American Institute of Physics,
DOI: 10.1063/1.3548547.
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