What is it about?
Ga2O3-based unipolar devices have great potential in the field of power electronics. However, the reasons for the degradation of device performance after long-term use are completely different from those of bipolar devices. If you want to explore why the performance of Ga2O3-based Schottky diodes degrades under forward electrical stress, this article can help you find possible answers from the defect aspect.
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Why is it important?
We systematically present the degradation mechanism of gallium oxide unipolar devices in the on-state from the perspective of the source and distribution of body defects and through changes in the electron transport mechanism, which can lay a theoretical foundation for improving the reliability of gallium oxide unipolar devices.
Perspectives
I hope this article will make a field as abstract and far-flung as microelectronics reliability interesting and even exciting, as we delve deeper into the core reasons why components in an electronic device degrade over time.
yingzhe Wang
Xidian University
Read the Original
This page is a summary of: Forward bias stress-induced degradation mechanism in β-Ga2O3 SBDs: A trap-centric perspective, Applied Physics Letters, March 2025, American Institute of Physics,
DOI: 10.1063/5.0260529.
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