What is it about?
Semiconducting materials such as the transparent copper iodide, CuI, can conduct electricity due to imperfections in its crystal lattice. This research investigates the surprising beneficial damage effects of noble gases ions when ion-implanted into CuI. We find a decoupling in usually codependent material properties, which leads to simultaneous enhancement in the ability for CuI to both conduct electricity, and thermoelectric energy harvesting.
Featured Image
Photo by John Doyle on Unsplash
Why is it important?
This research sets the scene for ion beam modification methods to be applied to semiconducting materials for direct performance-improvement for electronic and thermoelectric applications. We demonstrate a theoretical understanding of these effects and suggest that such a modification process and theoretical understanding can be applied to many other compounds.
Perspectives
The results of these experiments were pleasantly surprising, as the first samples were initially intended only as references for other studies. Instead this modification procedure turned into a study of its own.
Martin Markwitz
Victoria University of Wellington
Read the Original
This page is a summary of: Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation, Applied Physics Letters, November 2024, American Institute of Physics,
DOI: 10.1063/5.0233754.
You can read the full text:
Contributors
The following have contributed to this page
