What is it about?
Ga2O3-based bipolar devices hold significant potential in power electronics. However, device performance degradation after long-term use is one of the important reasons restricting its development. Do you want to explore how and why Ga2O3-based pn diodes degraded under on-state electrical stress? Then please go into this work and find the possible answers.
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Why is it important?
In theory, gallium oxide-based devices have many advantages. However, the characteristics will still be seriously degraded when it works in a powered state for a long time. One of the core reasons for the degradation is the defects in it. This work explains the possible degradation mechanism of the device from the perspective of defect evolution, which can provide theoretical ideas for further improving gallium oxide-based device performance.
Perspectives
Writing this article was a great pleasure as I hope that it will not only help scholars in the semiconductor field to study the device degradation mechanism, but also attract all friends who are interested in chips. We will work together with all sectors to promote the continuous progress of human science
yingzhe Wang
Xidian University
Read the Original
This page is a summary of: On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes, Applied Physics Letters, May 2024, American Institute of Physics,
DOI: 10.1063/5.0204051.
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