What is it about?

Hole transport in p-GaN/AlGaN/GaN has been studied from the measured electrical data and device perspective. Our analysis shows the coexistence of thermionic emission and space charge limited transport depending on the applied bias and temperature.

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Why is it important?

Previously reported results focused on material aspects such as mobility and contact-mediated transport of carriers in p-GaN devices. However, this cannot explain the measured non-linear I-V characteristics. In this letter, we present an experimental and theoretical analysis of the hole transport mechanism in p-GaN/AlGaN/UID GaN heterostructures under different voltage and temperature conditions. Such a comprehensive device-based study of the current conduction mechanism in such heterostructures is required for the understanding of the fundamental hole transport physics and will have implications for their performance optimization.

Perspectives

I hope such a study might intrigue people to look into this interesting non-linear current-voltage relationship in p-GaN devices from first principle theories. Because p-GaN devices are imperative for realizing GaN CMOS technology to advance the power and mixed-signal integrated circuits. For that, a thorough understanding of the hole-transport mechanism is required so that the engineers can optimize the design space of this device to have a comparable current level to n-GaN devices. If that seems too farfetched, I hope this article can be good reading material for the device community.

Bejoy Sikder

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This page is a summary of: Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure, Applied Physics Letters, June 2024, American Institute of Physics,
DOI: 10.1063/5.0203344.
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