What is it about?
The discovery of ferroelectric AlScN nitride in 2019 has unlocked other ferroelectric nitrides. This work explores the growth and ferroelectric properties of AlBN epitaxially grown by Molecular Beam Epitaxy on superconducting Nb2N. Despite widespread applications of wurtzite III-nitrides in electronics and photonic devices, there is still significant confusion about the direction of spontaneous polarization in these polar semiconductors. The spontaneous polarization direction of wurtzite nitride is along the [0001] crystallographic direction.
Featured Image
Photo by Maxence Pira on Unsplash
Why is it important?
This work demonstrates that the spontaneous polarization direction of AlBN films is along the [0001] crystallographic direction. The discovery of ferroelectric AlScN nitride in 2019 has unlocked other ferroelectric nitrides. This work explores the growth and ferroelectric properties of AlBN epitaxially grown by Molecular Beam Epitaxy on superconducting Nb2N. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.
Perspectives
Ferroelectricity is demonstrated in the epitaxial AlBN film grown on superconducting Nb2N. The spontaneous polarization direction of wurtzite AlBN films is along the [0001] crystallographic direction.
Chandrashekhar Savant
Cornell University
Read the Original
This page is a summary of: Ferroelectric AlBN films by molecular beam epitaxy, Applied Physics Letters, August 2024, American Institute of Physics,
DOI: 10.1063/5.0181217.
You can read the full text:
Contributors
The following have contributed to this page
