What is it about?
Morphological properties of dislocations in bulk GaN crystals were investigated by transmission electron microscopy (TEM) and multi-photon photo luminescence (MPPL). We found a correlation between dislocation’s Burgers vector and etch pit size, and characteristic meandering morphology of b=1c screw dislocations in the HVPE-GaN crystal was observed.
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Why is it important?
Knowledge about a dislocation (linear lattice defect) in semiconductor crystal is crucially important because it affects electrical property of semiconductor devices critically. Microscopic analysis by TEM and MPPL clarify morphological properties of dislocations that are influential on electrical characteristics. It can contribute to the development of power electronics devices with improved efficiency and reliability.
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This page is a summary of: Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates, Journal of Applied Physics, June 2021, American Institute of Physics,
DOI: 10.1063/5.0053766.
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