What is it about?
The electrical characteristics of individual threading dislocation (TD) in Na-flux GaN crystal was investigated by C-AFM. Leakage current and the electrical conduction mechanism vary significantly depending on crystal growth sectors; TDs in the c-plane growth sector showed the lowest reverse leakage current.
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Why is it important?
Gallium nitride (GaN) is a wide-gap semiconductor material expected for next generation power electronics applications. For its practical use the suppression of electrical degradation due to dislocation is a critical issue. Our C-AFM analysis shows that leakage current and the electrical conduction mechanism vary significantly depending on crystal growth sectors where the TDs are formed; c-plane growth sector shows the lowest reverse leakage current. Such information will contribute to the development of power electronic devices with improved efficiency and reliability.
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This page is a summary of: Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy, Journal of Applied Physics, March 2018, American Institute of Physics,
DOI: 10.1063/1.5011345.
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