Electronic information on Si-nanowires

What is it about?

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

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Why is it important?

The research conducted in this paper was primarily concerned with the investigation of the SiNWs a charge storing component for future flash memory-type devices. The charging of SiNWs (grown at low temperature) can be appealing to the community working in the area of Nanoscience. Our approach aims to reduce the cost and the temperature budget as well as suggest a way to scale down the dimensions of the memory cell.

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