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This page is a summary of: Electrical properties of RF-sputtered Zn-doped GaN films and p -Zn-GaN/ n -Si hetero junction diode with low leakage current of 10 −9 A and a high rectification ratio above 10 5, Materials Science and Engineering B, August 2017, Elsevier,
DOI: 10.1016/j.mseb.2017.04.008.
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