What is it about?
In this work, we introduce the imperfect Fermi gas entropy term to study/quantify the effect of electron correlation on electronic transport (via D/μ relation) in 2D degenerate molecular and materials systems/devices. From our study, it is noted that the chemical potential and entropy are fundamentally important quantities for charge transport calculations (here, Einstein's D/μ relation). At certain combinations of chemical potential and temperature values, we retain the original Einstein's relation of D/μ =kT/q. We mainly observed the transition shift between localization to delocalization carrier transport.
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Why is it important?
Our analytical formalism provides best-approximated diffusion-based mobility calculation for both charge localization and delocalization characteristic molecular and material systems (/devices) at wide physical conditions. The quantum and thermal flux in electronic devices can be quantified by our entropy-ruled/committed transport method, which is fundamentally important for designing the novel electron devices. "Hence, this work will be highly helpful to give the fresh look on metal cum semiconducting behavior in advanced functional materials for various potential applications"
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This page is a summary of: Quantum-classical conjecture on Einstein's diffusion-mobility relation for two-dimensional Schrödinger-type degenerate systems: An entropy-ruled transport analysis, Annals of Physics, March 2024, Elsevier,
DOI: 10.1016/j.aop.2024.169596.
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