What is it about?
An overview on the design of a piezoresistive pressure sensor constituted of a silicon circular diaphragm with four DLC thin-film piezoresistors arranged in the Wheatstone bridge configuration. The sensor was designed from analytical formulas found in the literature.
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Why is it important?
Piezoresistive semiconductor sensors based on micro-electro-mechanical systems (MEMS) technology have superior performance compared to many conventional sensors in terms of sensitivity, stability, resolution and size. Silicon is the most common semiconductor material used in MEMS piezoresistive sensors. These devices due to physical and electronic properties of the silicon, such as small bandgap energy (1.12 eV), have application limited in harsh environments, particularly at high temperatures. Carbon-based materials, such as diamond, diamond-like carbon (DLC) and silicon carbide (SiC), are recognized as the promising materials because they possess excellent physical properties that silicon and other materials lack.
Read the Original
This page is a summary of: Design and Analytical Studies of a DLC Thin-Film Piezoresistive Pressure Microsensor, January 2017, Springer Science + Business Media,
DOI: 10.1007/978-3-319-66963-2_39.
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