Deposition of Amorphous Hydrogenated Carbon Nitride Films with a Dielectric Barrier Discharge

What is it about?

Thin amorphous carbon nitride (CNx) films have been deposited by DBD plasma. Deposition experiments have been performed on flat silicon (100) substrates using a C2H6/N2 gas mixture and deposition times of up to 6 h. The C2H6/N2 gas ratio has been varied between 1:1 and 1:5 to observe the influence of the feeding gas mixture on the chemical composition of the deposited films. The experiments were performed at gas pressures of 300 and 500 mbar. The chemical composition and bond structure of the deposited CNx films were evaluated by X-ray photoelectron spectroscopy and by attenuated total reflectance-Fourier transform infrared spectrometry. The results show that the chemical composition of amorphous CNx thin films depends on the working gas composition. Films deposited with higher nitrogen gas concentrations show a larger N/C ratio, an increase of C=N and CN bonds, and become harder.

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