What is it about?
The temperature dependence of the noise spectra revealed the existence of multiple trap levels in TaOx-based non-volatile memory device. This fact is expected to play an advantageous role in controlling analog resistance of the device.
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Why is it important?
Low-frequency-noise spectroscopy (LFNS) is a powerful method for investigating the nature of traps in conduction paths, even at the nanoscale.
Perspectives
This work shows that TaOx-based non-volatile memory device will open up the possibility to promote the low-energy-consumption AI-edge applications.
Hiroyuki AKINAGA
National Institute of Advanced Industrial Science and Technology
Read the Original
This page is a summary of: Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory, Advanced Electronic Materials, November 2021, Wiley,
DOI: 10.1002/aelm.202100758.
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