All Stories

  1. Design Optimization of 1.2kV 4H-SiC Trench MOSFET

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Peter Gammon, Tianxiang Dai

  2. Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Tianxiang Dai, Peter Gammon

  3. 4H-SiC trench MOSFET with integrated fast recovery MPS diode

    Article • Electronics Letters, February 2018, the Institution of Engineering and Technology (the IET)

    Peter Gammon, Mr Chun Wa chan, Tianxiang Dai

  4. 4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Tianxiang Dai

  5. High Temperature Nitridation of 4H-SiC MOSFETs

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr YOGESH SHARMA, Dr David M Martin, Tianxiang Dai