All Stories

  1. Telecom‐Band Quantum Dots Compatible with Silicon Photonics for Photonic Quantum Applications

    Article • Advanced Quantum Technologies, February 2024, Wiley

    Mohamed Benyoucef

  2. Polarized and Bright Telecom C-Band Single-Photon Source from InP-Based Quantum Dots Coupled to Elliptical Bragg Gratings

    Article • Nano Letters, January 2024, American Chemical Society (ACS)

    Mohamed Benyoucef

  3. Distributed Bragg Reflector–Mediated Excitation of InAs/InP Quantum Dots Emitting in the Telecom C‐Band

    Article • physica status solidi (RRL) - Rapid Research Letters, May 2023, Wiley

    Mohamed Benyoucef

  4. Photonic Quantum Technologies

    Article • May 2023, Wiley

    Mohamed Benyoucef

  5. Telecom Wavelengths InP ‐Based Quantum Dots for Quantum Communication

    Article • May 2023, Wiley

    Mohamed Benyoucef

  6. CMOS-compatible integration of telecom band InAs/InP quantum-dot single-photon sources on a Si chip using transfer printing

    Article • Applied Physics Express, December 2022, Institute of Physics Publishing

    Mohamed Benyoucef

  7. Quantum interference with independent single-photon sources over 300 km fiber

    Article • Advanced Photonics, December 2022, SPIE

    Mohamed Benyoucef

  8. Luminescent Properties of Phosphonate Ester-Supported Neodymium(III) Nitrate and Chloride Complexes

    Article • Molecules, December 2022, MDPI AG

    Mohamed Benyoucef

  9. Temperature dependence of refractive indices of Al0.9Ga0.1As and In0.53Al0.1Ga0.37As in the telecommunication spectral range

    Article • Optics Express, May 2022, Optical Society of America (OSA)

    Mohamed Benyoucef

  10. Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy

    Article • Materials, October 2021, MDPI AG

    Mohamed Benyoucef

  11. Spin memory effect in charged single telecom quantum dots: erratum

    Article • Optics Express, October 2021, Optical Society of America (OSA)

    Mohamed Benyoucef

  12. Spin memory effect in charged single telecom quantum dots

    Article • Optics Express, October 2021, Optical Society of America (OSA)

    Mohamed Benyoucef

  13. InP-based single-photon sources operating at telecom C-band with increased extraction efficiency

    Article • Applied Physics Letters, May 2021, American Institute of Physics

    Mohamed Benyoucef

  14. Azido-Functionalized Aromatic Phosphonate Esters in RPOSS-Cage-Supported Lanthanide Ion (Ln = La, Nd, Dy, Er) Coordination

    Article • Inorganic Chemistry, March 2021, American Chemical Society (ACS)

    Mohamed Benyoucef

  15. Magneto-Optical Characterization of Trions in Symmetric InP-Based Quantum Dots for Quantum Communication Applications

    Article • Materials, February 2021, MDPI AG

    Mohamed Benyoucef

  16. Optical and Electronic Properties of Symmetric InAs/(...

    Article • Physical Review Applied, December 2020, American Physical Society (APS)

    Mohamed Benyoucef

  17. Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities

    Article • Nanotechnology, May 2020, Institute of Physics Publishing

    Mohamed Benyoucef

  18. Photonic Quantum Technologies

    Article • Advanced Quantum Technologies, February 2020, Wiley

    Mohamed Benyoucef

  19. Telecom wavelength InP-based L3 photonic crystal cavities: Properties of the cavity ground mode

    Article • January 2020, American Institute of Physics

    Mohamed Benyoucef

  20. Functionalised phosphonate ester supported lanthanide (Ln = La, Nd, Dy, Er) complexes

    Article • Dalton Transactions, January 2020, Royal Society of Chemistry

    Mohamed Benyoucef

  21. High‐Purity Triggered Single‐Photon Emission from Symmetric Single InAs/InP Quantum Dots around the Telecom C‐Band Window

    Article • Advanced Quantum Technologies, November 2019, Wiley

    Mohamed Benyoucef

  22. Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths

    Article • November 2018, American Physical Society (APS)

    Mohamed Benyoucef

  23. Telecom Wavelength Nanophotonic Elements for Quantum Communication

    Article • July 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Mohamed Benyoucef

  24. Telecom wavelength single quantum dots with very small excitonic fine-structure splitting

    Article • Applied Physics Letters, April 2018, American Institute of Physics

    Mohamed Benyoucef

  25. III–V on Silicon Nanocomposites

    Article • January 2018, Elsevier

    Mohamed Benyoucef

  26. Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55μm telecom wavelength

    Article • December 2017, American Physical Society (APS)

    Mohamed Benyoucef

  27. Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities

    Article • Applied Physics Letters, January 2017, American Institute of Physics

    Mohamed Benyoucef

  28. III-V integration on Si for photonics

    Article • July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Mohamed Benyoucef

  29. (Invited) III-V / Si Integration for Photonics

    Article • ECS Transactions, May 2016, The Electrochemical Society

    Mohamed Benyoucef

  30. Large anisotropy of electron and holegfactors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots

    Article • March 2016, American Physical Society (APS)

    Mohamed Benyoucef

  31. Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom band at 1.5 µm

    Article • Applied Physics B Photophysics and Laser Chemistry, February 2016, Springer Science + Business Media

    Mohamed Benyoucef

  32. Enhanced electrical model for dye-sensitized solar cell characterization

    Article • Solar Energy, December 2015, Elsevier

    Dr. Souraya Goumri-Said, Mohamed Benyoucef

  33. Electron and holegfactors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths

    Article • Physical Review B, October 2015, American Physical Society (APS)

    Mohamed Benyoucef

  34. Interface structure and strain state of InAs nano-clusters embedded in silicon

    Article • Acta Materialia, May 2015, Elsevier

    Mohamed Benyoucef

  35. Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates

    Article • physica status solidi (a), October 2014, Wiley

    Mohamed Benyoucef

  36. Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range

    Article • Applied Physics Letters, January 2014, American Institute of Physics

    Mohamed Benyoucef

  37. Nanostructured hybrid material based on highly mismatched III–V nanocrystals fully embedded in silicon

    Article • physica status solidi (a), December 2013, Wiley

    Mingjian Wu, Mohamed Benyoucef

  38. Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots

    Article • Applied Physics Letters, October 2013, American Institute of Physics

    Mohamed Benyoucef

  39. Direct growth of III–V quantum dots on silicon substrates: structural and optical properties

    Article • Semiconductor Science and Technology, August 2013, Institute of Physics Publishing

    Mohamed Benyoucef

  40. Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates

    Article • Applied Physics Letters, April 2013, American Institute of Physics

    Mohamed Benyoucef

  41. Pre-patterned silicon substrates for the growth of III-V nanostructures

    Article • physica status solidi (a), November 2012, Wiley

    Mohamed Benyoucef

  42. Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures

    Article • Microelectronic Engineering, September 2012, Elsevier

    Mohamed Benyoucef

  43. Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

    Article • Nanoscale Research Letters, August 2012, Springer Science + Business Media

    Mohamed Benyoucef

  44. Controlling quantum dot emission by integration of semiconductor nanomembranes onto piezoelectric actuators

    Article • physica status solidi (b), February 2012, Wiley

    Mohamed Benyoucef

  45. Quality-factor enhancement of optical modes mediated by strong coupling in micron-size semiconductor disks

    Article • physica status solidi (b), February 2012, Wiley

    Mohamed Benyoucef

  46. Enhancing the photoluminescence properties of single epitaxial gaas quantum dots using optical antennas

    Article • May 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Mohamed Benyoucef

  47. Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization

    Article • Journal of Crystal Growth, May 2011, Elsevier

    Mohamed Benyoucef

  48. Quality-factor enhancement of supermodes in coupled microdisks

    Article • Optics Letters, April 2011, Optical Society of America (OSA)

    Mohamed Benyoucef

  49. Enhancing the Optical Excitation Efficiency of a Single Self-Assembled Quantum Dot with a Plasmonic Nanoantenna

    Article • Nano Letters, October 2010, American Chemical Society (ACS)

    Mohamed Benyoucef

  50. Microcavity enhanced silicon light emitting pn-diode

    Article • Applied Physics Letters, April 2010, American Institute of Physics

    Mohamed Benyoucef

  51. Strain states in a quantum well embedded into a rolled-up microtube: X-ray and photoluminescence studies

    Article • Applied Physics Letters, April 2010, American Institute of Physics

    Mohamed Benyoucef

  52. Tuning the Exciton Binding Energies in Single Self-AssembledInGaAs/GaAsQuantum Dots by Piezoelectric-Induced Biaxial...

    Article • Physical Review Letters, February 2010, American Physical Society (APS)

    Mohamed Benyoucef

  53. Toward quantum interference of photons from independent quantum dots

    Article • Applied Physics Letters, December 2009, American Institute of Physics

    Mohamed Benyoucef

  54. Epitaxial quantum dots in stretchable optical microcavities

    Article • Optics Express, November 2009, Optical Society of America (OSA)

    Mohamed Benyoucef

  55. Electrospray Ion Beam Deposition: Soft-Landing and Fragmentation of Functional Molecules at Solid Surfaces

    Article • ACS Nano, September 2009, American Chemical Society (ACS)

    Mohamed Benyoucef

  56. Three-dimensional photonic components based on optically active group IV membranes

    Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Mohamed Benyoucef

  57. Quantum Dots: Self-Assembled Quantum Dot Molecules (Adv. Mater. 25-26/2009)

    Article • Advanced Materials, July 2009, Wiley

    Mohamed Benyoucef

  58. Self-Assembled Quantum Dot Molecules

    Article • Advanced Materials, April 2009, Wiley

    Mohamed Benyoucef

  59. Optical properties of rolled-up tubular microcavities from shaped nanomembranes

    Article • Applied Physics Letters, April 2009, American Institute of Physics

    Mohamed Benyoucef

  60. Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si(001) substrates

    Article • Nanotechnology, January 2009, Institute of Physics Publishing

    Mohamed Benyoucef

  61. Wavelength Tunable Triggered Single-Photon Source from a Single CdTe Quantum Dot on Silicon Substrate

    Article • Nano Letters, January 2009, American Chemical Society (ACS)

    Mohamed Benyoucef

  62. Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

    Article • Applied Physics Letters, September 2008, American Institute of Physics

    Mohamed Benyoucef

  63. On-chip Si/SiOx microtube refractometer

    Article • Applied Physics Letters, September 2008, American Institute of Physics

    Mohamed Benyoucef

  64. Bidirectional wavelength tuning of individual semiconductor quantum dots in a flexible rolled-up microtube

    Article • Physical Review B, July 2008, American Physical Society (APS)

    Mohamed Benyoucef

  65. Numerical investigation of optical response from rolled-up microtube resonator and its application

    Article • June 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Mohamed Benyoucef

  66. Optical fine structure of single ordered GaAs quantum dots

    Article • Physica E Low-dimensional Systems and Nanostructures, April 2008, Elsevier

    Mohamed Benyoucef

  67. Development and characterisation of (Ni, Cu, Co)-YSZ and Cu-Co-YSZ cermets anode materials for SOFC application

    Article • Surface and Coatings Technology, February 2008, Elsevier

    Mohamed Benyoucef

  68. Strongly coupled semiconductor microcavities: A route to couple artificial atoms over micrometric distances

    Article • Physical Review B, January 2008, American Physical Society (APS)

    Mohamed Benyoucef

  69. In situ Tuning of Optical Modes in Single Semiconductor Microcavities by Laser Heating

    Article • July 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Mohamed Benyoucef

  70. Optical Properties of a Wrinkled Nanomembrane with Embedded Quantum Well

    Article • Nano Letters, April 2007, American Chemical Society (ACS)

    Mohamed Benyoucef

  71. Comparable Homogeneous and Inhomogeneous Quantum Dot Luminescence Linewidths at Room Temperature

    Article • January 2007, American Institute of Physics

    Mohamed Benyoucef

  72. Quantum dots in a tube as light emitters, waveguides and ring resonators

    Article • January 2007, American Institute of Physics

    Mohamed Benyoucef

  73. Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting

    Article • Applied Physics Letters, December 2006, American Institute of Physics

    Mohamed Benyoucef

  74. Fabrication and characterization of microdisk resonators with In(Ga)As/GaAs quantum dots

    Article • physica status solidi c, December 2006, Wiley

    Mohamed Benyoucef

  75. Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots

    Article • Nanoscale Research Letters, September 2006, Springer Science + Business Media

    Mohamed Benyoucef

  76. Radiative emission dynamics of quantum dots in a single cavity micropillar

    Article • Physical Review B, July 2006, American Physical Society (APS)

    Mohamed Benyoucef

  77. Light emission and wave guiding of quantum dots in a tube

    Article • Applied Physics Letters, March 2006, American Institute of Physics

    Mohamed Benyoucef

  78. Correlated photon-pair emission from a charged single quantum dot

    Article • Physical Review B, June 2005, American Physical Society (APS)

    Mohamed Benyoucef

  79. Correlated photon pairs from single (In,Ga)As∕GaAs quantum dots in pillar microcavities

    Article • Journal of Applied Physics, January 2005, American Institute of Physics

    Mohamed Benyoucef

  80. Optical properties of semiconductor quantum dots and pillar microcavities

    Article • January 2005, American Institute of Physics

    Mohamed Benyoucef

  81. Single-Photon And Photon Pair Emission From Individual (In,Ga)As Quantum Dots

    Article • January 2005, American Institute of Physics

    Mohamed Benyoucef

  82. Enhanced correlated photon pair emission from a pillar microcavity

    Article • New Journal of Physics, July 2004, Institute of Physics Publishing

    Mohamed Benyoucef

  83. Optical modes of semiconductor micropillars: a theory-experiment comparison

    Article • January 2004, Optical Society of America (OSA)

    Mohamed Benyoucef

  84. Free-standing GaN grown on epitaxial lateral overgrown GaN substrates

    Article • Journal of Crystal Growth, August 2003, Elsevier

    Mohamed Benyoucef

  85. Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates

    Article • Applied Physics Letters, September 2002, American Institute of Physics

    Mohamed Benyoucef

  86. Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates

    Article • Materials Science and Engineering B, May 2002, Elsevier

    Mohamed Benyoucef

  87. Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

    Article • Applied Physics Letters, April 2002, American Institute of Physics

    Mohamed Benyoucef

  88. Raman Mapping and Finite Element Analysis of Epitaxial Lateral Overgrown GaN on Sapphire Substrates

    Article • MRS Proceedings, January 2002, Springer Science + Business Media

    Mohamed Benyoucef

  89. Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

    Article • Applied Physics Letters, December 2001, American Institute of Physics

    Mohamed Benyoucef

  90. Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

    Article • Applied Physics Letters, December 2001, American Institute of Physics

    Mohamed Benyoucef

  91. Stress at the Coalescence Boundary of Epitaxial Lateral Overgrown GaN

    Article • phys stat sol (a), December 2001, Wiley

    Mohamed Benyoucef

  92. Stress at the Coalescence Boundary of Epitaxial Lateral Overgrown GaN

    Article • phys stat sol (a), December 2001, Wiley

    Mohamed Benyoucef

  93. Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary

    Article • Journal of Applied Physics, October 2001, American Institute of Physics

    Mohamed Benyoucef

  94. Raman scattering and photoluminescence studies on Si/SiO2 superlattices

    Article • Journal of Applied Physics, June 2001, American Institute of Physics

    Mohamed Benyoucef

  95. Design and fabrication of air/semiconductor Bragg gratings for short wavelength nitride-based lasers

    Article • January 2001, Institute of Electrical & Electronics Engineers (IEEE)

    Mohamed Benyoucef

  96. Nano-Fabrication of GaN Pillars Using Focused Ion Beam Etching

    Article • phys stat sol (a), November 1999, Wiley

    Mohamed Benyoucef

  97. The Growth of Gallium Nitride Films Produced by Reactive Sputtering at Low Temperature

    Article • phys stat sol (a), November 1999, Wiley

    Mohamed Benyoucef

  98. The Growth of Gallium Nitride Films Produced by Reactive Sputtering at Low Temperature

    Article • phys stat sol (a), November 1999, Wiley

    Mohamed Benyoucef

  99. Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

    Article • MRS Proceedings, January 1999, Springer Science + Business Media

    Mohamed Benyoucef

  100. Microscopic theory of photoluminescence from semiconductor quantum dots in microcavities

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Mohamed Benyoucef