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  1. Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge
  2. Competition between photoinduced collective motions and thermally excited random vibrations
  3. Highly sensitive and fast phototransistor based on large size CVD-grown SnS2nanosheets
  4. Sulfur vacancy activated field effect transistors based on ReS2nanosheets