Dr Gerhard Klimeck

All Stories

1. 
   Impact of Se concentration and distribution on topological transition in FeTe1− xSex crystals

   Article • Applied Physics Letters, March 2024, American Institute of Physics

   Dr Gerhard Klimeck

2. 
   Hubzero: Community Growth for Four Science Gateways Supporting Open Science

   Article • Computing in Science & Engineering, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

   Dr Gerhard Klimeck

3. 
   Doping Profile Engineered Triple Heterojunction TFETs With 12-nm Body Thickness

   Article • IEEE Transactions on Electron Devices, June 2021, Institute of Electrical & Electronics Engineers (IEEE)

   Dr Gerhard Klimeck

4. 
   Impact of Body Thickness and Scattering on III-V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation

   Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

   Dr Gerhard Klimeck

5. 
   Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations

   Article • Applied Physics Letters, December 2019, American Institute of Physics

   Dr Gerhard Klimeck

6. 
   Microwave-induced capacitance resonances and anomalous magnetoresistance in double quantum wells

   Article • Journal of Applied Physics, June 2019, American Institute of Physics

   Dr Gerhard Klimeck

7. 
   Non-orthogonal tight-binding models: Problems and possible remedies for realistic nano-scale devices

   Article • Journal of Applied Physics, April 2019, American Institute of Physics

   Dr Gerhard Klimeck

8. 
   Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs

   Article • IEEE Transactions on Electron Devices, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

   Dr Gerhard Klimeck

9. 
   Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

   Article • IEEE Transactions on Electron Devices, October 2018, Institute of Electrical & Electronics Engineers (IEEE)

   Dr Gerhard Klimeck

10. 
    Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

    Article • IEEE Transactions on Nanotechnology, September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

11. 
    Switching Mechanism and the Scalability of Vertical-TFETs

    Article • IEEE Transactions on Electron Devices, July 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

12. 
    Explicit screening full band quantum transport model for semiconductor nanodevices

    Article • Journal of Applied Physics, June 2018, American Institute of Physics

    Dr Gerhard Klimeck

13. 
    Sensitivity Challenge of Steep Transistors

    Article • IEEE Transactions on Electron Devices, April 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

14. 
    Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications

    Article • IEEE Transactions on Nanotechnology, March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

15. 
    Control of interlayer physics in 2H transition metal dichalcogenides

    Article • Journal of Applied Physics, December 2017, American Institute of Physics

    Dr Gerhard Klimeck

16. 
    Silicon quantum processor with robust long-distance qubit couplings

    Article • Nature Communications, September 2017, Springer Science + Business Media

    Dr Gerhard Klimeck

17. 
    Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors

    Article • Journal of Physics Condensed Matter, September 2017, Institute of Physics Publishing

    Dr Gerhard Klimeck

18. 
    A Multiscale Modeling of Triple-Heterojunction Tunneling FETs

    Article • IEEE Transactions on Electron Devices, June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

19. 
    A high-current InP-channel triple heterojunction tunnel transistor design

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

20. 
    Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions

    Article • IEEE Transactions on Electron Devices, June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

21. 
    Transport in vertically stacked hetero-structures from 2D materials

    Article • Journal of Physics Conference Series, June 2017, Institute of Physics Publishing

    Dr Gerhard Klimeck

22. 
    III-N heterostructure devices for low-power logic

    Article • March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

23. 
    NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes

    Article • February 2017, SPIE

    Dr Gerhard Klimeck

24. 
    Insights from simple models for surface states in nanostructures

    Article • European Journal of Physics, February 2017, Institute of Physics Publishing

    Dr Gerhard Klimeck

25. 
    Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness

    Article • IEEE Transactions on Electron Devices, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

26. 
    Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene

    Article • IEEE Electron Device Letters, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

27. 
    Performance degradation of superlattice MOSFETs due to scattering in the contacts

    Article • Journal of Applied Physics, December 2016, American Institute of Physics

    Dr Gerhard Klimeck

28. 
    A tunnel FET design for high-current, 120 mV operation

    Article • December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

29. 
    Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs

    Article • IEEE Transactions on Nanotechnology, November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

30. 
    P-Type Tunnel FETs With Triple Heterojunctions

    Article • IEEE Journal of the Electron Devices Society, November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

31. 
    Creating impact in the digital space: digital practice dependency in communities of digital scientific innovations

    Article • Scientometrics, September 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

32. 
    Grain boundary resistance in nanoscale copper interconnections

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

33. 
    Design Rules for High Performance Tunnel Transistors From 2-D Materials

    Article • IEEE Journal of the Electron Devices Society, September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

34. 
    NEMO5: Predicting MoS2 heterojunctions

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

35. 
    Characterizing Si:P quantum dot qubits with spin resonance techniques

    Article • Scientific Reports, August 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

36. 
    Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass

    Article • Scientific Reports, August 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

37. 
    Novel III-N heterostructure devices for low-power logic and more

    Article • August 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

38. 
    Transport of spin qubits with donor chains under realistic experimental conditions

    Article • July 2016, American Physical Society (APS)

    Dr Gerhard Klimeck

39. 
    Transferable tight-binding model for strained group IV and III-V materials and heterostructures

    Article • July 2016, American Physical Society (APS)

    Dr Gerhard Klimeck

40. 
    From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling

    Article • IEEE Transactions on Electron Devices, July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

41. 
    Multi-scale, multi-physics NEGF quantum transport for nitride LEDs

    Article • July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

42. 
    Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots

    Article • IEEE Journal of Quantum Electronics, July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

43. 
    Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

    Article • Scientific Reports, June 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

44. 
    Incoherent transport in NEMO5: realistic and efficient scattering on phonons

    Article • Journal of Computational Electronics, June 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

45. 
    Exploring channel doping designs for high-performance tunneling FETs

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

46. 
    Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

47. 
    High-current InP-based triple heterojunction tunnel transistors

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

48. 
    Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations

    Article • Physica B Condensed Matter, June 2016, Elsevier

    Dr Gerhard Klimeck

49. 
    Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

    Article • IEEE Journal of the Electron Devices Society, May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

50. 
    Quantum simulation of the Hubbard model with dopant atoms in silicon

    Article • Nature Communications, April 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

51. 
    Highly tunable exchange in donor qubits in silicon

    Article • npj Quantum Information, April 2016, Nature

    Dr Gerhard Klimeck

52. 
    Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

    Article • Applied Physics Letters, March 2016, American Institute of Physics

    Dr Gerhard Klimeck

53. 
    Categorizing Users of Cloud Services

    Article • Service Science, March 2016, INFORMS

    Dr Gerhard Klimeck

54. 
    General Retarded Contact Self-energies in and beyond the Non-equilibrium Green's Functions Method

    Article • Journal of Physics Conference Series, March 2016, Institute of Physics Publishing

    Dr Gerhard Klimeck

55. 
    High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction

    Article • IEEE Electron Device Letters, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

56. 
    Surface Passivation in Empirical Tight Binding

    Article • IEEE Transactions on Electron Devices, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

57. 
    Can Homojunction Tunnel FETs Scale Below 10 nm?

    Article • IEEE Electron Device Letters, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

58. 
    Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

    Article • IEEE Electron Device Letters, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

59. 
    Quantum Transport Simulation of III-V TFETs with Reduced-Order $$ \varvec{k} \cdot \varvec{p} $$ k · p Method

    Article • January 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

60. 
    Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

    Article • IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

61. 
    Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

    Article • IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

62. 
    Electrically Tunable Bandgaps in Bilayer MoS2

    Article • Nano Letters, November 2015, American Chemical Society (ACS)

    Dr Gerhard Klimeck

63. 
    A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

    Article • Journal of Applied Physics, October 2015, American Institute of Physics

    Dr Gerhard Klimeck

64. 
    2D tunnel transistors for ultra-low power applications: Promises and challenges

    Article • October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

65. 
    Dielectric Engineered Tunnel Field-Effect Transistor

    Article • IEEE Electron Device Letters, October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

66. 
    In-surface confinement of topological insulator nanowire surface states

    Article • Applied Physics Letters, September 2015, American Institute of Physics

    Dr Gerhard Klimeck

67. 
    Atomistic quantum transport approach to time-resolved device simulations

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

68. 
    Electrically doped WTe2 tunnel transistors

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

69. 
    Engineering the optical transitions of self-assembled quantum dots

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

70. 
    Finite difference schemes for k ⋅ p models: A comparative study

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

71. 
    Electrically doped 2D material tunnel transistor

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

72. 
    Achieving a higher performance in bilayer graphene FET - strain engineering

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

73. 
    Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

74. 
    Quantum dot lab: an online platform for quantum dot simulations

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

75. 
    The evaluation of non-topological components in Berry phase and momentum relaxation time in a gapped 3D topological insulator

    Article • Journal of Physics Condensed Matter, August 2015, Institute of Physics Publishing

    Dr Gerhard Klimeck

76. 
    Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators

    Article • Journal of Computational Electronics, August 2015, Springer Science + Business Media

    Dr Gerhard Klimeck

77. 
    Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution

    Article • Physical Review B, August 2015, American Physical Society (APS)

    Dr Gerhard Klimeck

78. 
    Interactive Analytic Systems for Understanding the Scholarly Impact of Large-Scale E-science Cyberenvironments

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

79. 
    Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction

    Article • IEEE Transactions on Electron Devices, August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

80. 
    Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)]

    Article • Journal of Applied Physics, July 2015, American Institute of Physics

    Dr Gerhard Klimeck

81. 
    Scaling Theory of Electrically Doped 2D Transistors

    Article • IEEE Electron Device Letters, July 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

82. 
    Tunneling: The major issue in ultra-scaled MOSFETs

    Article • July 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

83. 
    Strain and electric field control of hyperfine interactions for donor spin qubits in silicon

    Article • Physical Review B, June 2015, American Physical Society (APS)

    Dr Gerhard Klimeck

84. 
    Transistors for VLSI, for wireless: A view forwards through fog

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

85. 
    Interface-induced heavy-hole/light-hole splitting of acceptors in silicon

    Article • Applied Physics Letters, May 2015, American Institute of Physics

    Dr Gerhard Klimeck

86. 
    Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    Article • Journal of Applied Physics, May 2015, American Institute of Physics

    Dr Gerhard Klimeck

87. 
    Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

    Article • Journal of Physics Condensed Matter, March 2015, Institute of Physics Publishing

    Professor Lloyd Hollenberg, Dr Gerhard Klimeck

88. 
    Design Guidelines for Sub-12 nm Nanowire MOSFETs

    Article • IEEE Transactions on Nanotechnology, March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

89. 
    The influence of proximity induced ferromagnetism, superconductivity and Fermi-velocity on evolution of Berry phase in Bi2Se3 topological insulator

    Article • Semiconductor Science and Technology, February 2015, Institute of Physics Publishing

    Dr Gerhard Klimeck

90. 
    Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs

    Article • IEEE Transactions on Electron Devices, February 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

91. 
    Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures

    Article • Journal of Applied Physics, January 2015, American Institute of Physics

    Dr Gerhard Klimeck

92. 
    Mythbusting Nanotechnology Knowledge Transfer through Novel Cyberinfrastructure

    Article • January 2015, Purdue University Press

    Dr Gerhard Klimeck

93. 
    nanoHUB.org: A Gateway to Undergraduate Simulation-Based Research in Materials Science and Related Fields

    Article • MRS Proceedings, January 2015, Cambridge University Press

    Dr Gerhard Klimeck

94. 
    Anisotropic strain in SmSe and SmTe: Implications for electronic transport

    Article • Physical Review B, December 2014, American Physical Society (APS)

    Dr Gerhard Klimeck

95. 
    Limits to Metallic Conduction in Atomic-Scale Quasi-One-Dimensional Silicon Wires

    Article • Physical Review Letters, December 2014, American Physical Society (APS)

    Dr Gerhard Klimeck

96. 
    Design and Simulation of Two-Dimensional Superlattice Steep Transistors

    Article • IEEE Electron Device Letters, December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

97. 
    Coherent Control of a Single Si 29 Nuclear Spin Qubit

    Article • Physical Review Letters, December 2014, American Physical Society (APS)

    Dr Gerhard Klimeck

98. 
    Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon

    Article • Physical Review Letters, December 2014, American Physical Society (APS)

    Dr Gerhard Klimeck

99. 
    Non-equilibrium Green's functions method: Non-trivial and disordered leads

    Article • Applied Physics Letters, November 2014, American Institute of Physics

    Dr Gerhard Klimeck

100. 
     Brillouin zone unfolding method for effective phonon spectra

     Article • Physical Review B, November 2014, American Physical Society (APS)

     Dr Gerhard Klimeck

101. 
     A Tight-Binding Study of Single-Atom Transistors

     Article • Small, October 2014, Wiley

     Dr Gerhard Klimeck

102. 
     More Moore landscape for system readiness - ITRS2.0 requirements

     Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

103. 
     Quantum transport in NEMO5: Algorithm improvements and high performance implementation

     Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

104. 
     Transistor roadmap projection using predictive full-band atomistic modeling

     Article • Applied Physics Letters, August 2014, American Institute of Physics

     Dr Gerhard Klimeck

105. 
     Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots

     Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

106. 
     Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

     Article • Applied Physics Letters, June 2014, American Institute of Physics

     Dr Gerhard Klimeck

107. 
     Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

108. 
     Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

109. 
     Designing a large scale quantum computer with atomistic simulations

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

110. 
     Performance degradation due to thicker physical layer of high k oxide in ultra-scaled MOSFETs and mitigation through electrostatics design

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

111. 
     Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics

     Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

112. 
     Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors

     Article • ACS Nano, May 2014, American Chemical Society (ACS)

     Dr Gerhard Klimeck

113. 
     Spin blockade and exchange in Coulomb-confined silicon double quantum dots

     Article • Nature Nanotechnology, April 2014, Springer Science + Business Media

     Dr Gerhard Klimeck

114. 
     Spatially resolving valley quantum interference of a donor in silicon

     Article • Nature Materials, April 2014, Springer Science + Business Media

     Dr Gerhard Klimeck

115. 
     An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

     Article • Journal of Applied Physics, March 2014, American Institute of Physics

     Dr Gerhard Klimeck

116. 
     An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu condu...

     Article • Journal of Applied Physics, March 2014, American Institute of Physics

     Dr Gerhard Klimeck

117. 
     Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

     Article • Journal of Applied Physics, January 2014, American Institute of Physics

     Dr Gerhard Klimeck

118. 
     Mythbusting Today's Nanotechnology and Knowledge Transfer Through nanoHUB.org

     Article • January 2014, Purdue University Press

     Dr Gerhard Klimeck

119. 
     Tool-Based Curricula and Visual Learning

     Article • Electronics ETF, December 2013, National and University Library of the Republic of Srpska

     Dr Gerhard Klimeck

120. 
     Learning and research in the cloud

     Article • Nature Physics, November 2013, Nature

     Dr Gerhard Klimeck

121. 
     Efficient and realistic device modeling from atomic detail to the nanoscale

     Article • Journal of Computational Electronics, October 2013, Springer Science + Business Media

     Dr Gerhard Klimeck

122. 
     Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces

     Article • Applied Physics Letters, September 2013, American Institute of Physics

     Dr Gerhard Klimeck

123. 
     Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L Valleys

     Article • IEEE Electron Device Letters, September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

124. 
     A tight-binding study of channel modulation in atomic-scale Si:P nanowires

     Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

125. 
     nanoHUB-U: A science gateway ventures into structured online education

     Article • August 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

126. 
     Design principles for HgTe based topological insulator devices

     Article • Journal of Applied Physics, July 2013, American Institute of Physics

     Dr Gerhard Klimeck

127. 
     Silicon quantum electronics

     Article • Reviews of Modern Physics, July 2013, American Physical Society (APS)

     Dr Gerhard Klimeck

128. 
     Engineering Nanowire n-MOSFETs at $L_{g}<8~{\rm nm}$

     Article • IEEE Transactions on Electron Devices, July 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

129. 
     Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

     Article • Mathematical and Computer Modelling, July 2013, Elsevier

     Dr Gerhard Klimeck

130. 
     Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

     Article • Nature Communications, June 2013, Springer Science + Business Media

     Dr Gerhard Klimeck

131. 
     Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons

     Article • Applied Physics Letters, June 2013, American Institute of Physics

     Dr Gerhard Klimeck

132. 
     Low rank approximation method for efficient Green's function calculation of dissipative quantum transport

     Article • Journal of Applied Physics, June 2013, American Institute of Physics

     Dr Gerhard Klimeck

133. 
     Quantum corrected drift-diffusion simulation for prediction of CMOS scaling

     Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

134. 
     Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark

     Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

135. 
     Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts

     Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

136. 
     Atomistic simulation of phonon and alloy limited hole mobility in Si1-x Ge x nanowires

     Article • physica status solidi (RRL) - Rapid Research Letters, May 2013, Wiley

     Dr Gerhard Klimeck

137. 
     Electron transport in nano-scaled piezoelectronic devices

     Article • Applied Physics Letters, May 2013, American Institute of Physics

     Dr Gerhard Klimeck

138. 
     Noninvasive Spatial Metrology of Single-Atom Devices

     Article • Nano Letters, April 2013, American Chemical Society (ACS)

     Dr Gerhard Klimeck

139. 
     Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon

     Article • April 2013, Taylor & Francis

     Dr Gerhard Klimeck

140. 
     Probing scattering mechanisms with symmetric quantum cascade lasers

     Article • Optics Express, March 2013, Optical Society of America (OSA)

     Dr Gerhard Klimeck

141. 
     Utilizing the Unique Properties of Nanowire MOSFETs for RF Applications

     Article • Nano Letters, March 2013, American Chemical Society (ACS)

     Dr Gerhard Klimeck

142. 
     Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

     Article • Journal of Computational Electronics, January 2013, Springer Science + Business Media

     Dr Gerhard Klimeck

143. 
     Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett.107, 136602 (2011)]

     Article • Physical Review Letters, January 2013, American Physical Society (APS)

     Dr Gerhard Klimeck

144. 
     Atomistic modeling of metallic nanowires in silicon

     Article • Nanoscale, January 2013, Royal Society of Chemistry

     Dr Gerhard Klimeck

145. 
     nanoHUB.org: cloud-based services for nanoscale modeling, simulation, and education

     Article • Nanotechnology Reviews, January 2013, De Gruyter

     Dr Gerhard Klimeck

146. 
     Observation of 1D Behavior in Si Nanowires: Toward High-Performance TFETs

     Article • Nano Letters, October 2012, American Chemical Society (ACS)

     Dr Gerhard Klimeck

147. 
     Indirectly pumped 37 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

     Article • Optics Express, August 2012, Optical Society of America (OSA)

     Dr Gerhard Klimeck

148. 
     Design of high-current L-valley GaAs=AlAs0.56Sb0.44/InP (111) ultra-thin-body nMOSFETs

     Article • August 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

149. 
     Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

     Article • IEEE Transactions on Electron Devices, August 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

150. 
     Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

     Article • IEEE Transactions on Electron Devices, August 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

151. 
     Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

     Article • Journal of Applied Physics, June 2012, American Institute of Physics

     Dr Gerhard Klimeck

152. 
     Archimedes, the free Monte Carlo simulator: A GNU package for submicron semiconductor devices on nanoHUB

     Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

153. 
     Full-band study of ultra-thin Si:P nanowires

     Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

154. 
     Multiband tight-binding model for strained and bilayer graphene from DFT calculations

     Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

155. 
     Spectroscopy of a deterministic single-donor device in silicon

     Article • May 2012, SPIE

     Dr Gerhard Klimeck

156. 
     The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

     Article • Nanotechnology, April 2012, Institute of Physics Publishing

     Dr Gerhard Klimeck

157. 
     Design of three-well indirect pumping terahertz quantum cascade lasers for high optical gain based on nonequilibrium Green’s function analysis

     Article • Applied Physics Letters, March 2012, American Institute of Physics

     Dr Gerhard Klimeck

158. 
     Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport

     Article • Journal of Applied Physics, March 2012, American Institute of Physics

     Dr Gerhard Klimeck

159. 
     Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

     Article • Applied Physics Letters, March 2012, American Institute of Physics

     Dr Gerhard Klimeck

160. 
     A single-atom transistor

     Article • Nature Nanotechnology, February 2012, Springer Science + Business Media

     Dr Gerhard Klimeck

161. 
     Calculation of phonon spectrum and thermal properties in suspended 〈100〉 In X Ga1−X As nanowires

     Article • Journal of Computational Electronics, February 2012, Springer Science + Business Media

     Dr Gerhard Klimeck

162. 
     Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing

     Article • Applied Physics Letters, February 2012, American Institute of Physics

     Dr Gerhard Klimeck

163. 
     A two-dimensional domain decomposition technique for the simulation of quantum-scale devices

     Article • Journal of Computational Physics, February 2012, Elsevier

     Dr Gerhard Klimeck

164. 
     Ohm’s Law Survives to the Atomic Scale

     Article • Science, January 2012, American Association for the Advancement of Science

     Dr Gerhard Klimeck

165. 
     An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach

     Article • Journal of Computational Electronics, December 2011, Springer Science + Business Media

     Dr Gerhard Klimeck

166. 
     Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

     Article • Journal of Applied Physics, December 2011, American Institute of Physics

     Dr Giuseppe Carlo Tettamanzi, Dr Gerhard Klimeck

167. 
     Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors

     Article • Applied Physics Letters, December 2011, American Institute of Physics

     Dr Gerhard Klimeck

168. 
     Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

     Article • Journal of Applied Physics, December 2011, American Institute of Physics

     Dr Gerhard Klimeck

169. 
     Single layer MoS2 band structure and transport

     Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

170. 
     Ballistic hole injection velocity analysis in Ge UTB pMOSFETs: Dependence on body thickness, orientation and strain

     Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

171. 
     Effects of interface roughness scattering on RF performance of nanowire transistors

     Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

172. 
     Practical Considerations in Cloud Utilization for the Science Gateway nanoHUB.org

     Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

173. 
     Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

     Article • Physical Review B, November 2011, American Physical Society (APS)

     Dr Gerhard Klimeck

174. 
     Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires

     Article • Journal of Applied Physics, November 2011, American Institute of Physics

     Dr Gerhard Klimeck

175. 
     NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

     Article • IEEE Transactions on Nanotechnology, November 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

176. 
     Enhanced valence force field model for the lattice properties of gallium arsenide

     Article • Physical Review B, October 2011, American Physical Society (APS)

     Dr Gerhard Klimeck

177. 
     Contact modeling and analysis of InAs HEMT transistors

     Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

178. 
     Network for Computational Nanotechnology - a strategic plan for global knowledge transfer in research and education

     Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

179. 
     Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

     Article • Physical Review B, September 2011, American Physical Society (APS)

     Dr Gerhard Klimeck

180. 
     Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

     Article • Physical Review B, September 2011, American Physical Society (APS)

     Dr Gerhard Klimeck

181. 
     Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade

     Article • Physical Review Letters, September 2011, American Physical Society (APS)

     Dr Gerhard Klimeck

182. 
     Role of surface orientation on atomic layer deposited Al2O3/GaAs interface structure and Fermi level pinning: A density functional theory study

     Article • Applied Physics Letters, August 2011, American Institute of Physics

     Dr Gerhard Klimeck

183. 
     Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

     Article • Applied Physics Letters, August 2011, American Institute of Physics

     Dr Gerhard Klimeck

184. 
     Distributed non-equilibrium Green’s function algorithms for the simulation of nanoelectronic devices with scattering

     Article • Journal of Applied Physics, August 2011, American Institute of Physics

     Dr Gerhard Klimeck

185. 
     Enhancement of thermoelectric efficiency by uniaxial tensile stress in n-type GaAs nanowires

     Article • August 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

186. 
     NanoHUB.org - the ABACUS tool suite as a framework for semiconductor education courses

     Article • August 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

187. 
     Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

     Article • Nanotechnology, July 2011, Institute of Physics Publishing

     Hubert Krenner, Dr Gerhard Klimeck

188. 
     Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

     Article • IEEE Transactions on Electron Devices, July 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

189. 
     Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)]

     Article • Physical Review B, June 2011, American Physical Society (APS)

     Dr Gerhard Klimeck

190. 
     Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering

     Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

191. 
     The nanoelectronic modeling tool NEMO 5: Capabilities, validation, and application to Sb-heterostructures

     Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

192. 
     A new method to achieve RF linearity in SOI nanowire MOSFETs

     Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

193. 
     Model development for lattice properties of gallium arsenide using parallel genetic algorithm

     Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

194. 
     Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

     Article • Physical Review B, May 2011, American Physical Society (APS)

     Dr Gerhard Klimeck

195. 
     Atomistic study of electronic structure of PbSe nanowires

     Article • Applied Physics Letters, May 2011, American Institute of Physics

     Dr Gerhard Klimeck

196. 
     Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

     Article • Journal of Applied Physics, May 2011, American Institute of Physics

     Dr Gerhard Klimeck

197. 
     Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

     Article • Journal of Applied Physics, May 2011, American Institute of Physics

     Dr Gerhard Klimeck

198. 
     Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

     Article • IEEE Transactions on Electron Devices, May 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

199. 
     Social Networks of Researchers and Educators on nanoHUB.org

     Article • May 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

200. 
     Atomistic approach to alloy scattering in Si1−xGex

     Article • Applied Physics Letters, April 2011, American Institute of Physics

     Dr Gerhard Klimeck

201. 
     Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs

     Article • IEEE Electron Device Letters, April 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Giuseppe Carlo Tettamanzi, Dr Gerhard Klimeck

202. 
     Stark tuning of the charge states of a two-donor molecule in silicon

     Article • Nanotechnology, April 2011, Institute of Physics Publishing

     Dr Gerhard Klimeck

203. 
     Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis

     Article • Journal of Applied Physics, March 2011, American Institute of Physics

     Dr Gerhard Klimeck

204. 
     Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

     Article • IEEE Electron Device Letters, March 2011, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

205. 
     Tuning lattice thermal conductance by porosity control in ultrascaled Si and Ge nanowires

     Article • Applied Physics Letters, February 2011, American Institute of Physics

     Dr Gerhard Klimeck

206. 
     Current density and continuity in discretized models

     Article • European Journal of Physics, February 2011, Institute of Physics Publishing

     Dr Gerhard Klimeck

207. 
     Spin–orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures

     Article • New Journal of Physics, January 2011, Institute of Physics Publishing

     Dr Gerhard Klimeck

208. 
     Computational Study of the Electronic Performance of Cross-Plane Superlattice Peltier Devices

     Article • MRS Proceedings, January 2011, Cambridge University Press

     Dr Gerhard Klimeck

209. 
     Tuning lattice thermal conductance in ultra-scaled hollow SiNW: Role of porosity size, density and distribution

     Article • MRS Proceedings, January 2011, Cambridge University Press

     Dr Gerhard Klimeck

210. 
     Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

     Article • January 2011, ACM (Association for Computing Machinery)

     Dr Gerhard Klimeck

211. 
     Automated grid probe system to improve end-to-end grid reliability for a science gateway

     Article • January 2011, ACM (Association for Computing Machinery)

     Dr Gerhard Klimeck

212. 
     Multiscale Modeling of a Quantum Dot Heterostructure

     Article • MRS Proceedings, January 2011, Cambridge University Press

     Dr Gerhard Klimeck

213. 
     Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements

     Article • Applied Physics Letters, December 2010, American Institute of Physics

     Dr Gerhard Klimeck

214. 
     Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations

     Article • December 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

215. 
     Adaptive quadrature for sharply spiked integrands

     Article • Journal of Computational Electronics, October 2010, Springer Science + Business Media

     Dr Gerhard Klimeck

216. 
     Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

     Article • Journal of Computational Electronics, October 2010, Springer Science + Business Media

     Dr Gerhard Klimeck

217. 
     Coherent electron transport by adiabatic passage in an imperfect donor chain

     Article • Physical Review B, October 2010, American Physical Society (APS)

     Dr Gerhard Klimeck

218. 
     Rough interfaces in THz quantum cascade lasers

     Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

219. 
     Valley degeneracy in (110) Si quantum wells strain and misorientation effects

     Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

220. 
     A comprehensive atomistic analysis of bandstructure velocities in si nanowires

     Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

221. 
     Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires

     Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

222. 
     Quantum approach to electronic noise calculations in the presence of electron-phonon interactions

     Article • Physical Review B, September 2010, American Physical Society (APS)

     Dr Gerhard Klimeck

223. 
     Computational Study on the Performance of Si Nanowire pMOSFETs Based on the $k \cdot p$ Method

     Article • IEEE Transactions on Electron Devices, September 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

224. 
     Innovative characterization techniques for ultra-scaled FinFETs

     Article • August 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

225. 
     Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise

     Article • August 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

226. 
     nanoHUB.org serving over 120,000 users worldwide: It's first cyber-environment assessment

     Article • August 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

227. 
     Current density and continuity in discretized models

     Article • European Journal of Physics, July 2010, Institute of Physics Publishing

     Dr Gerhard Klimeck

228. 
     Computational Electronics

     Article • June 2010, Taylor & Francis

     Dr Gerhard Klimeck

229. 
     Scattering in Si-nanowires — Where does it matter?

     Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

230. 
     Atomistic modeling of the thermoelectric power factor in ultra-scaled Silicon nanowires

     Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

231. 
     Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

     Article • IEEE Electron Device Letters, June 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

232. 
     On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias

     Article • Journal of Applied Physics, June 2010, American Institute of Physics

     Dr Gerhard Klimeck

233. 
     Quantum transport in ultra-scaled phosphorous-doped silicon nanowires

     Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

234. 
     Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

     Article • Journal of Applied Physics, April 2010, American Institute of Physics

     Dr Gerhard Klimeck

235. 
     Fullband Study of Ultra-Scaled Electron and Hole SiGe Nanowire FETs

     Article • April 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

236. 
     Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

     Article • IEEE Electron Device Letters, April 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

237. 
     Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

     Article • Physical Review B, March 2010, American Physical Society (APS)

     Dr Gerhard Klimeck

238. 
     Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

     Article • Computing in Science & Engineering, March 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

239. 
     Cyber-Enabled Simulations in Nanoscale Science and Engineering

     Article • Computing in Science & Engineering, March 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

240. 
     Numerical strategies towards peta-scale simulations of nanoelectronics devices

     Article • Parallel Computing, February 2010, Elsevier

     Dr Gerhard Klimeck

241. 
     Sub-threshold study of undoped trigate nFinFET

     Article • Thin Solid Films, February 2010, Elsevier

     Dr Gerhard Klimeck

242. 
     Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

     Article • IEEE Electron Device Letters, February 2010, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

243. 
     Strain-engineered self-organized InAs∕GaAs quantum dots for long wavelength (1.3 μm–1.5 μm) optical applications

     Article • January 2010, American Institute of Physics

     Dr Gerhard Klimeck

244. 
     Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys

     Article • Electrochemical and Solid-State Letters, January 2010, The Electrochemical Society

     Dr Gerhard Klimeck

245. 
     +Level Spectrum Of Single Gated As Donors

     Article • January 2010, American Institute of Physics

     Dr Gerhard Klimeck

246. 
     Performance analysis of ultra-scaled InAs HEMTs

     Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

247. 
     Atomistic simulations for SiGe pMOS devices — Bandstructure to transport

     Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

248. 
     Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

     Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

249. 
     Study of ultra-scaled SiGe/Si core/shell nanowire FETs for CMOS applications

     Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

250. 
     Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

     Article • Physical Review B, October 2009, American Physical Society (APS)

     Dr Gerhard Klimeck

251. 
     Orbital Stark effect and quantum confinement transition of donors in silicon

     Article • Physical Review B, October 2009, American Physical Society (APS)

     Dr Gerhard Klimeck

252. 
     Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

     Article • Physical Review B, October 2009, American Physical Society (APS)

     Dr Gerhard Klimeck

253. 
     Mapping Donor Electron Wave Function Deformations at a Sub-Bohr Orbit Resolution

     Article • Physical Review Letters, September 2009, American Physical Society (APS)

     Dr Gerhard Klimeck

254. 
     Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study

     Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck, Siegfried Selberherr

255. 
     Investigation of In_xGa_{1-x}As Ultra-Thin-Body Tunneling FETs Using a Full-Band and Atomistic Approach

     Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

256. 
     Atomistic simulations of adiabatic coherent electron transport in triple donor systems

     Article • Physical Review B, July 2009, American Physical Society (APS)

     Dr Gerhard Klimeck

257. 
     Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB

     Article • Journal of Physics Conference Series, July 2009, Institute of Physics Publishing

     Dr Gerhard Klimeck

258. 
     Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness

     Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

259. 
     Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

     Article • IEEE Electron Device Letters, June 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

260. 
     Computational nanoelectronics research and education at nanoHUB.org

     Article • Journal of Computational Electronics, June 2009, Springer Science + Business Media

     Dr Gerhard Klimeck

261. 
     Indium gallium arsenide on silicon interband tunnel diodes for NDR-based memory and steep subthreshold slope transistor applications

     Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

262. 
     Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

     Article • Applied Physics Letters, June 2009, American Institute of Physics

     Dr Gerhard Klimeck

263. 
     Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs

     Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

264. 
     ABACUS and AQME: Semiconductor Device and Quantum Mechanics Education on nanoHUB.org

     Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

265. 
     Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers

     Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

266. 
     A Study of Temperature-dependent Properties of N-type d-doped Si Band-structures in Equilibrium

     Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

267. 
     Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique

     Article • IEEE Electron Device Letters, May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

268. 
     Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

     Article • IEEE Transactions on Nanotechnology, May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

269. 
     On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

     Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

270. 
     Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots

     Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

271. 
     Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

     Article • April 2009, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

272. 
     Design Space for Low Sensitivity to Size Variations in [110] PMOS Nanowire Devices: The Implications of Anisotropy in the Quantization Mass

     Article • Nano Letters, February 2009, American Chemical Society (ACS)

     Dr Gerhard Klimeck

273. 
     Valley degeneracies in (111) silicon quantum wells

     Article • Applied Physics Letters, January 2009, American Institute of Physics

     Dr Gerhard Klimeck

274. 
     Multimillion Atom Simulations with Nemo3D

     Article • January 2009, Springer Science + Business Media

     Dr Gerhard Klimeck

275. 
     Informations- und Kommunikationstechnologien für die Instandhaltungsplanung und -steuerung

     Article • January 2009, Springer Science + Business Media

     Dr Gerhard Klimeck

276. 
     Non-primitive rectangular cells for tight-binding electronic structure calculations

     Article • Physica E Low-dimensional Systems and Nanostructures, January 2009, Elsevier

     Dr Gerhard Klimeck

277. 
     From NEMO1D and NEMO3D to OMEN: Moving towards atomistic 3-D quantum transport in nano-scale semiconductors

     Article • December 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

278. 
     Full-band and atomistic simulation of realistic 40 nm InAs HEMT

     Article • December 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

279. 
     Transport-based dopant metrology in advanced FinFETs

     Article • December 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

280. 
     Structures and energetics of silicon nanotubes from molecular dynamics and density functional theory

     Article • Physical Review B, November 2008, American Physical Society (APS)

     Dr Gerhard Klimeck

281. 
     A multi-level parallel simulation approach to electron transport in nano-scale transistors

     Article • November 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

282. 
     Bandstructure Effects in Silicon Nanowire Hole Transport

     Article • IEEE Transactions on Nanotechnology, November 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

283. 
     Computing entries of the inverse of a sparse matrix using the FIND algorithm

     Article • Journal of Computational Physics, November 2008, Elsevier

     Dr Gerhard Klimeck

284. 
     TeraGrid Science Gateways and Their Impact on Science

     Article • Computer, November 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

285. 
     Contact Block Reduction method for ballistic quantum transport with semi-empirical sp3d5s* tight binding band models

     Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

286. 
     Valley splitting in Si quantum dots embedded in SiGe

     Article • Applied Physics Letters, September 2008, American Institute of Physics

     Dr Gerhard Klimeck

287. 
     Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

     Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

288. 
     nanoHUB.org: Advancing Education and Research in Nanotechnology

     Article • Computing in Science & Engineering, September 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

289. 
     OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices

     Article • August 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

290. 
     A Tight Binding Study of Strain-Reduced Confinement Potentials in Identical and Non-Identical InAs/GaAs Vertically Stacked Quantum Dots

     Article • August 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

291. 
     nanoHUB.org - Online Simulation and More Materials for Semiconductors and Nanoelectronics in Education and Research

     Article • August 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

292. 
     Valley splitting in finite barrier quantum wells

     Article • Physical Review B, June 2008, American Physical Society (APS)

     Dr Gerhard Klimeck

293. 
     Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

     Article • Nature Physics, June 2008, Springer Science + Business Media

     Dr Gerhard Klimeck

294. 
     Bandstructure Effects in Silicon Nanowire Electron Transport

     Article • IEEE Transactions on Electron Devices, June 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

295. 
     Band-Structure Effects on the Performance of III–V Ultrathin-Body SOI MOSFETs

     Article • IEEE Transactions on Electron Devices, May 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

296. 
     Multiband transmission calculations for nanowires using an optimized renormalization method

     Article • Physical Review B, April 2008, American Physical Society (APS)

     Dr Gerhard Klimeck

297. 
     QUANTUM SIMULATIONS OF DUAL GATE MOSFET DEVICES: BUILDING AND DEPLOYING COMMUNITY NANOTECHNOLOGY SOFTWARE TOOLS ON NANOHUB.ORG

     Article • April 2008, World Scientific Pub Co Pte Lt

     Dr Gerhard Klimeck

298. 
     Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]

     Article • IEEE Transactions on Electron Devices, April 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

299. 
     HUB is where the heart is

     Article • IEEE Nanotechnology Magazine, March 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

300. 
     A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs

     Article • IEEE Transactions on Electron Devices, March 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

301. 
     Building semiconductor nanostructures atom by atom

     Article • Microelectronics Journal, March 2008, Elsevier

     Dr Gerhard Klimeck

302. 
     Modeling and simulation of field-effect biosensors (BioFETs) and their deployment on the nanoHUB

     Article • Journal of Physics Conference Series, March 2008, Institute of Physics Publishing

     Dr Gerhard Klimeck

303. 
     Transport spectroscopy of a single atom in a FinFET

     Article • Journal of Physics Conference Series, March 2008, Institute of Physics Publishing

     Dr Gerhard Klimeck

304. 
     Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D

     Article • Journal of Computational Electronics, February 2008, Springer Science + Business Media

     Dr Gerhard Klimeck

305. 
     NEMO-3D based atomistic simulation of a double quantum dot structure for spin-blockaded transport

     Article • Journal of Computational Electronics, February 2008, Springer Science + Business Media

     Dr Gerhard Klimeck

306. 
     Simulations of nanowire transistors: atomistic vs. effective mass models

     Article • Journal of Computational Electronics, February 2008, Springer Science + Business Media

     Dr Gerhard Klimeck

307. 
     Atomistic non-equilibrium Green’s function simulations of Graphene nano-ribbons in the quantum hall regime

     Article • Journal of Computational Electronics, February 2008, Springer Science + Business Media

     Dr Gerhard Klimeck

308. 
     Determination of the eigenstates and wavefunctions of a single gated As donor

     Article • February 2008, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

309. 
     Electronic structure and transmission characteristics of SiGe nanowires

     Article • Journal of Computational Electronics, January 2008, Springer Science + Business Media

     Dr Gerhard Klimeck

310. 
     Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

     Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2008, American Vacuum Society

     Dr Gerhard Klimeck

311. 
     Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

     Article • IEEE Transactions on Electron Devices, September 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

312. 
     Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications

     Article • IEEE Transactions on Electron Devices, September 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

313. 
     QUANTUM SIMULATIONS OF DUAL GATE MOSFET DEVICES: BUILDING AND DEPLOYING COMMUNITY NANOTECHNOLOGY SOFTWARE TOOLS ON NANOHUB.ORG

     Article • International Journal of High Speed Electronics and Systems, September 2007, World Scientific Pub Co Pte Lt

     Dr Gerhard Klimeck

314. 
     High Precision Quantum Control of Single Donor Spins in Silicon

     Article • Physical Review Letters, July 2007, American Physical Society (APS)

     Dr Gerhard Klimeck

315. 
     Quantum transport with spin dephasing: A nonequlibrium Green’s function approach

     Article • Physical Review B, July 2007, American Physical Society (APS)

     Dr Gerhard Klimeck

316. 
     Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕

     Article • Physical Review B, July 2007, American Physical Society (APS)

     Dr Gerhard Klimeck

317. 
     Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors

     Article • IEEE Transactions on Nanotechnology, July 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

318. 
     Evolution time and energy uncertainty

     Article • European Journal of Physics, May 2007, Institute of Physics Publishing

     Dr Gerhard Klimeck

319. 
     Influence of vacancies on metallic nanotube transport properties

     Article • Applied Physics Letters, April 2007, American Institute of Physics

     Dr Gerhard Klimeck

320. 
     Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor

     Article • Nano Letters, March 2007, American Chemical Society (ACS)

     Dr Gerhard Klimeck

321. 
     Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

     Article • Applied Physics Letters, February 2007, American Institute of Physics

     Dr Gerhard Klimeck

322. 
     Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection

     Article • Journal of Computational Electronics, January 2007, Springer Science + Business Media

     Dr Gerhard Klimeck

323. 
     Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancy defects

     Article • Journal of Computational Electronics, January 2007, Springer Science + Business Media

     Dr Gerhard Klimeck

324. 
     Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

     Article • Journal of Physics Condensed Matter, January 2007, Institute of Physics Publishing

     Dr Gerhard Klimeck

325. 
     NanoHUB.org Tutorial: Education Simulation Tools

     Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

326. 
     Electronic Structure of Si/InAs Composite Channels

     Article • MRS Proceedings, January 2007, Springer Science + Business Media

     Dr Gerhard Klimeck

327. 
     Symmetry Breaking and Fine Structure Splitting in Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field

     Article • January 2007, American Institute of Physics

     Dr Gerhard Klimeck

328. 
     A Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and Transmission

     Article • January 2007, American Institute of Physics

     Dr Gerhard Klimeck

329. 
     Atomistic Simulation of Non-Degeneracy and Optical Polarization Anisotropy in Pyramidal Quantum Dots

     Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

330. 
     Nanoelectronics: Metrology and Computation

     Article • January 2007, American Institute of Physics

     Dr Gerhard Klimeck

331. 
     Strain and electronic structure interactions in realistically-scaled quantum dot stacks

     Article • January 2007, American Institute of Physics

     Dr Gerhard Klimeck

332. 
     The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires

     Article • IEEE Transactions on Nanotechnology, January 2007, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

333. 
     EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires

     Article • Journal of Computational Electronics, December 2006, Springer Science + Business Media

     Dr Gerhard Klimeck

334. 
     Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs

     Article • Journal of Computational Electronics, December 2006, Springer Science + Business Media

     Dr Gerhard Klimeck

335. 
     The national center for the design of biomimetic nanoconductors

     Article • Nanomedicine Nanotechnology Biology and Medicine, December 2006, Elsevier

     Dr Gerhard Klimeck

336. 
     Atomistic simulation of nanowires in thesp3d5

     Article • Physical Review B, November 2006, American Physical Society (APS)

     Dr Gerhard Klimeck

337. 
     Investigation of device parameters for field-effect DNA-sensors by three-dimensional simulation

     Article • October 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

338. 
     Hub-based Simulation and Graphics Hardware Accelerated Visualization for Nanotechnology Applications

     Article • IEEE Transactions on Visualization and Computer Graphics, September 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

339. 
     The impact of the nanoscale vision on the future of learning and teaching

     Article • August 2006, SPIE

     Dr Gerhard Klimeck

340. 
     A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry

     Article • IEEE Transactions on Electron Devices, August 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

341. 
     Atomistic simulations of long-range strain and spatial asymmetry molecular states of seven quantum dots

     Article • Journal of Physics Conference Series, May 2006, Institute of Physics Publishing

     Dr Gerhard Klimeck

342. 
     Experimental verification of an optical negative-index material

     Article • Laser Physics Letters, January 2006, Institute of Physics Publishing

     Dr Gerhard Klimeck

343. 
     Short course IV Nano hub

     Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

344. 
     Conduction-band tight-binding description for Si applied to P donors

     Article • Physical Review B, November 2005, American Physical Society (APS)

     Dr Gerhard Klimeck

345. 
     Allowed wavevectors under the application of incommensurate periodic boundary conditions

     Article • European Journal of Physics, November 2005, Institute of Physics Publishing

     Dr Gerhard Klimeck

346. 
     Interactions of Fano resonances in the transmission of an Aharonov-Bohm ring with two embedded quantum dots in the presence of a magnetic field

     Article • Physical Review B, September 2005, American Physical Society (APS)

     Dr Gerhard Klimeck

347. 
     The discretized Schrödinger equation for the finite square well and its relationship to solid-state physics

     Article • European Journal of Physics, July 2005, Institute of Physics Publishing

     Dr Gerhard Klimeck

348. 
     On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire Transistors

     Article • IEEE Transactions on Electron Devices, July 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

349. 
     Electronic Properties of Silicon Nanowires

     Article • IEEE Transactions on Electron Devices, June 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

350. 
     Quantum cascade laser gain medium modeling using a second-nearest-neighbor tight-binding model

     Article • Superlattices and Microstructures, June 2005, Elsevier

     Dr Gerhard Klimeck

351. 
     Valley splitting in V-shaped quantum wells

     Article • Journal of Applied Physics, May 2005, American Institute of Physics

     Dr Gerhard Klimeck

352. 
     Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si

     Article • Japanese Journal of Applied Physics, April 2005, Japan Society of Applied Physics

     Dr Gerhard Klimeck

353. 
     Practical application of zone-folding concepts in tight-binding calculations

     Article • Physical Review B, March 2005, American Physical Society (APS)

     Dr Gerhard Klimeck

354. 
     Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations

     Article • Applied Physics Letters, February 2005, American Institute of Physics

     Dr Gerhard Klimeck

355. 
     Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

     Article • Journal of Applied Physics, January 2005, American Institute of Physics

     Dr Gerhard Klimeck

356. 
     Evolutionary computation technologies for space systems

     Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

357. 
     Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures

     Article • Applied Physics Letters, November 2004, American Institute of Physics

     Dr Gerhard Klimeck

358. 
     Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models

     Article • Physical Review B, October 2004, American Physical Society (APS)

     Dr Gerhard Klimeck

359. 
     Editorial

     Article • Journal of Computational Electronics, October 2004, Springer Science + Business Media

     Dr Gerhard Klimeck

360. 
     Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

     Article • Physical Review B, September 2004, American Physical Society (APS)

     Dr Gerhard Klimeck

361. 
     The discretized Schrödinger equation and simple models for semiconductor quantum wells

     Article • European Journal of Physics, May 2004, Institute of Physics Publishing

     Dr Gerhard Klimeck

362. 
     Smooth Quantum Hydrodynamic Model vs. NEMO Simulation of Resonant Tunneling Diodes

     Article • Journal of Computational Electronics, April 2004, Springer Science + Business Media

     Dr Gerhard Klimeck

363. 
     Valence band effective-mass expressions in thesp3<...

     Article • Physical Review B, March 2004, American Physical Society (APS)

     Dr Gerhard Klimeck

364. 
     Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures

     Article • Physical Review B, January 2004, American Physical Society (APS)

     Dr Gerhard Klimeck

365. 
     Valley splitting in strained silicon quantum wells

     Article • Applied Physics Letters, January 2004, American Institute of Physics

     Dr Gerhard Klimeck

366. 
     NEMO 1-D: the first NEGF-based TCAD tool

     Article • January 2004, Springer Science + Business Media

     Dr Gerhard Klimeck

367. 
     Quantum and Semi-Classical Transport in NEMO 1-D

     Article • Journal of Computational Electronics, December 2003, Springer Science + Business Media

     Dr Gerhard Klimeck

368. 
     Off-center electron transport in resonant tunneling diodes due to incoherent scattering

     Article • September 2003, American Physical Society (APS)

     Dr Gerhard Klimeck

369. 
     An atomistic model for the simulation of acoustic phonons, strain distribution, and Grüneisen coefficients in zinc-blende semiconductors

     Article • Superlattices and Microstructures, September 2003, Elsevier

     Dr Gerhard Klimeck

370. 
     Strain effects in large-scale atomistic quantum dot simulations

     Article • physica status solidi (b), September 2003, Wiley

     Dr Gerhard Klimeck

371. 
     Disorder induced broadening in multimillion atom alloyed quantum dot systems

     Article • physica status solidi c, July 2003, Wiley

     Dr Gerhard Klimeck

372. 
     Comparison of numerical quantum device models

     Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck, Siegfried Selberherr

373. 
     Full band modeling of the excess current in a delta-doped silicon tunnel diode

     Article • Journal of Applied Physics, January 2003, American Institute of Physics

     Dr Gerhard Klimeck

374. 
     Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding

     Article • December 2002, American Physical Society (APS)

     Dr Gerhard Klimeck

375. 
     Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory

     Article • September 2002, American Physical Society (APS)

     Dr Gerhard Klimeck

376. 
     3-D atomistic nanoelectronic modeling on high performance clusters: multimillion atom simulations

     Article • Superlattices and Microstructures, February 2002, Elsevier

     Dr Gerhard Klimeck

377. 
     Article • Journal of Computational Electronics, January 2002, Springer Science + Business Media

     Dr Gerhard Klimeck

378. 
     Article • Journal of Computational Electronics, January 2002, Springer Science + Business Media

     Dr Gerhard Klimeck

379. 
     The use of cluster computer systems for NASA/JPL applications

     Article • August 2001, American Institute of Aeronautics and Astronautics (AIAA)

     Dr Gerhard Klimeck

380. 
     Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

     Article • physica status solidi (b), July 2001, Wiley

     Dr Gerhard Klimeck

381. 
     Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

     Article • physica status solidi (b), July 2001, Wiley

     Dr Gerhard Klimeck

382. 
     Electromagnetic coupling and gauge invariance in the empirical tight-binding method

     Article • June 2001, American Physical Society (APS)

     Dr Gerhard Klimeck

383. 
     Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions

     Article • April 2001, American Physical Society (APS)

     Dr Gerhard Klimeck

384. 
     Off-zone-center or indirect band-gap-like hole transport in heterostructures

     Article • April 2001, American Physical Society (APS)

     Dr Gerhard Klimeck

385. 
     Mechanical modeling of fretting cycles in electrical contacts

     Article • Wear, April 2001, Elsevier

     Dr Gerhard Klimeck

386. 
     Strong wavevector dependence of hole transport in heterostructures

     Article • Superlattices and Microstructures, March 2001, Elsevier

     Dr Gerhard Klimeck

387. 
     Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

     Article • Applied Physics Letters, February 2001, American Institute of Physics

     Dr Gerhard Klimeck

388. 
     sp3s*Tight-binding parameters for transport simulations in compound semiconductors

     Article • Superlattices and Microstructures, May 2000, Elsevier

     Dr Gerhard Klimeck

389. 
     Erratum: Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results [Phys. Rev. B56, 4102 (1997)]

     Article • February 2000, American Physical Society (APS)

     Dr Gerhard Klimeck

390. 
     Si tight-binding parameters from genetic algorithm fitting

     Article • Superlattices and Microstructures, February 2000, Elsevier

     Dr Gerhard Klimeck

391. 
     Resonant-tunneling diodes with emitter prewells

     Article • Applied Physics Letters, August 1999, American Institute of Physics

     Dr Gerhard Klimeck

392. 
     Interface effects in tunneling models with identical real and complex dispersions

     Article • March 1999, American Physical Society (APS)

     Dr Gerhard Klimeck

393. 
     Valence-band warping in tight-binding models

     Article • March 1999, American Physical Society (APS)

     Dr Gerhard Klimeck

394. 
     Integrated design and optimization of microelectronic devices

     Article • January 1999, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

395. 
     Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

     Article • Applied Physics Letters, October 1998, American Institute of Physics

     Dr Gerhard Klimeck

396. 
     Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations

     Article • September 1998, American Physical Society (APS)

     Dr Gerhard Klimeck

397. 
     Interface roughness and polar optical phonon scattering in RTDs

     Article • Semiconductor Science and Technology, August 1998, Institute of Physics Publishing

     Dr Gerhard Klimeck

398. 
     Numerical approximations to the treatment of interface roughness scattering in resonant tunnelling diodes

     Article • Semiconductor Science and Technology, August 1998, Institute of Physics Publishing

     Dr Gerhard Klimeck

399. 
     Genetically Engineered Nanostructure Devices

     Article • MRS Proceedings, January 1998, Springer Science + Business Media

     Dr Gerhard Klimeck

400. 
     A Generalized Tunneling Formula for Quantum Device Modeling

     Article • VLSI Design, January 1998, Hindawi Publishing Corporation

     Dr Gerhard Klimeck

401. 
     Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO)

     Article • VLSI Design, January 1998, Hindawi Publishing Corporation

     Dr Gerhard Klimeck

402. 
     Quantum Transport with Band-Structure and Schottky Contacts

     Article • physica status solidi (b), November 1997, Wiley

     Dr Gerhard Klimeck

403. 
     The Effects of Electron Screening Length and Emitter Quasi-Bound States on the Polar-Optical Phonon Scattering in Resonant Tunneling Diodes

     Article • physica status solidi (b), November 1997, Wiley

     Dr Gerhard Klimeck

404. 
     Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results

     Article • August 1997, American Physical Society (APS)

     Dr Gerhard Klimeck

405. 
     Single and multiband modeling of quantum electron transport through layered semiconductor devices

     Article • Journal of Applied Physics, June 1997, American Institute of Physics

     Dr Gerhard Klimeck

406. 
     Quantitative simulation of a resonant tunneling diode

     Article • Journal of Applied Physics, April 1997, American Institute of Physics

     Dr Gerhard Klimeck

407. 
     Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode

     Article • Superlattices and Microstructures, October 1996, Elsevier

     Dr Gerhard Klimeck

408. 
     Ultrafast characteristics of InGaP-InGaAlP laser amplifiers

     Article • IEEE Journal of Quantum Electronics, April 1996, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

409. 
     Quantum device simulation with a generalized tunneling formula

     Article • Applied Physics Letters, October 1995, American Institute of Physics

     Dr Gerhard Klimeck

410. 
     Transmission resonances and zeros in multiband models

     Article • July 1995, American Physical Society (APS)

     Dr Gerhard Klimeck

411. 
     Resonant tunneling through quantum-dot arrays

     Article • September 1994, American Physical Society (APS)

     Dr Gerhard Klimeck

412. 
     Elastic and inelastic scattering in quantum dots in the Coulomb-blockade regime

     Article • August 1994, American Physical Society (APS)

     Dr Gerhard Klimeck

413. 
     Conductance spectroscopy in coupled quantum dots

     Article • July 1994, American Physical Society (APS)

     Dr Gerhard Klimeck

414. 
     Electrical and physical modeling of contact defects due to fretting

     Article • IEEE Transactions on Components Packaging and Manufacturing Technology Part A, March 1994, Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

415. 
     Rate equations for the phonon peak in resonant-tunneling structures

     Article • November 1993, American Physical Society (APS)

     Dr Gerhard Klimeck

416. 
     Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes

     Article • March 1993, American Physical Society (APS)

     Dr Gerhard Klimeck

417. 
     Quantum kinetic analysis of mesoscopic systems: Linear response

     Article • Superlattices and Microstructures, January 1992, Elsevier

     Dr Gerhard Klimeck

418. 
     Laser-bandwidth-induced fluctuations in the intensity transmitted by a Fabry-Pérot interferometer

     Article • Physical Review A, September 1991, American Physical Society (APS)

     Dr Gerhard Klimeck

419. 
     Generation and intensity-correlation measurements of the real Gaussian field

     Article • Physical Review A, June 1990, American Physical Society (APS)

     Dr Gerhard Klimeck

420. 
     Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets

     Article • Springer Science + Business Media

     Dr Gerhard Klimeck

421. 
     Tunnel transistors

     Article • Cambridge University Press

     Dr Gerhard Klimeck

422. 
     Increasing Contributions in an Online Scientific Community: The Effect of Virtual Rewards, Social Messages and Observation Cuess

     Article • SSRN Electronic Journal, Social Science Electronic Publishing

     Dr Gerhard Klimeck

423. 
     A Parallel Sparse Linear Solver for Nearest-Neighbor Tight-Binding Problems

     Article • Springer Science + Business Media

     Dr Gerhard Klimeck

424. 
     Genetically engineered microelectronic infrared filters

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

425. 
     Modeling and simulation nanowires and nanotubes

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

426. 
     The NCN: Science, Simulation, and Cyber Services

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

427. 
     Building and deploying community nanotechnology software tools on nanoHUB.org - atomistic simulations of multimillion-atom quantum dot nanostructures

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

428. 
     Evolutionary Computation Technologies for the Automated Design of Space Systems

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

429. 
     Three-dimensional atomistic simulation of carbon nanotube FETs with realistic geometry

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

430. 
     VolQD: Direct Volume Rendering of Multi-million Atom Quantum Dot Simulations

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

431. 
     Bandstructure effects in ballistic nanoscale MOSFETs

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

432. 
     Evolutionary computing for spacecraft power subsystem design search and optimization

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

433. 
     Quantum cascade laser simulation using an sp/sup 3/s* full Brillouin zone tight-binding model

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

434. 
     Nanoelectronic 3-D (NEMO 3-D) simulation of multimillion atom quantum dot systems

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

435. 
     "Genetically engineered" nanoelectronics

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

436. 
     Evolution of analog circuits on field programmable transistor arrays

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

437. 
     Transverse momentum dependence of electron and hole tunneling in a full band tight-binding simulation [resonant tunnelling diodes]

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

438. 
     Evolutionary design of electronic devices and circuits

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

439. 
     Nano electronic modelling (NEMO)

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

440. 
     Mechanical modeling of fretting cycles of electrical contacts

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

441. 
     NEMO: general release of a new comprehensive quantum device simulator

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

442. 
     Resonant tunneling in disordered materials such as SiO/sub 2//Si/SiO/sub 2/

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

443. 
     Ultralow current density RTDs for tunneling-based SRAM

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

444. 
     Physical oxide thickness extraction and verification using quantum mechanical simulation

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

445. 
     Experimentally verified quantum device simulations based on multiband models, Hartree self-consistency, and scattering assisted charging

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck

446. 
     Efficient I-V simulation of quantum devices using full bandstructure models

     Article • Institute of Electrical & Electronics Engineers (IEEE)

     Dr Gerhard Klimeck