All Stories

  1. Impact of Se concentration and distribution on topological transition in FeTe1− xSex crystals

    Article • Frontiers in Human Neuroscience, March 2024, American Institute of Physics

    Dr Gerhard Klimeck

  2. Hubzero: Community Growth for Four Science Gateways Supporting Open Science

    Article • Computing in Science & Engineering, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  3. Doping Profile Engineered Triple Heterojunction TFETs With 12-nm Body Thickness

    Article • IEEE Transactions on Electron Devices, June 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  4. Impact of Body Thickness and Scattering on III-V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  5. Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations

    Article • Frontiers in Human Neuroscience, December 2019, American Institute of Physics

    Dr Gerhard Klimeck

  6. Microwave-induced capacitance resonances and anomalous magnetoresistance in double quantum wells

    Article • Journal of Applied Physics, June 2019, American Institute of Physics

    Dr Gerhard Klimeck

  7. Non-orthogonal tight-binding models: Problems and possible remedies for realistic nano-scale devices

    Article • Journal of Applied Physics, April 2019, American Institute of Physics

    Dr Gerhard Klimeck

  8. Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs

    Article • IEEE Transactions on Electron Devices, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  9. Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

    Article • IEEE Transactions on Electron Devices, October 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  10. Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

    Article • IEEE Transactions on Nanotechnology, September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  11. Switching Mechanism and the Scalability of Vertical-TFETs

    Article • IEEE Transactions on Electron Devices, July 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  12. Explicit screening full band quantum transport model for semiconductor nanodevices

    Article • Journal of Applied Physics, June 2018, American Institute of Physics

    Dr Gerhard Klimeck

  13. Sensitivity Challenge of Steep Transistors

    Article • IEEE Transactions on Electron Devices, April 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  14. Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications

    Article • IEEE Transactions on Nanotechnology, March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  15. Control of interlayer physics in 2H transition metal dichalcogenides

    Article • Journal of Applied Physics, December 2017, American Institute of Physics

    Dr Gerhard Klimeck

  16. Silicon quantum processor with robust long-distance qubit couplings

    Article • Nature Communications, September 2017, Springer Science + Business Media

    Dr Gerhard Klimeck

  17. Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors

    Article • Journal of Physics Condensed Matter, September 2017, Institute of Physics Publishing

    Dr Gerhard Klimeck

  18. A Multiscale Modeling of Triple-Heterojunction Tunneling FETs

    Article • IEEE Transactions on Electron Devices, June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  19. A high-current InP-channel triple heterojunction tunnel transistor design

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  20. Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions

    Article • IEEE Transactions on Electron Devices, June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  21. Transport in vertically stacked hetero-structures from 2D materials

    Article • Journal of Physics Conference Series, June 2017, Institute of Physics Publishing

    Dr Gerhard Klimeck

  22. III-N heterostructure devices for low-power logic

    Article • March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  23. NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes

    Article • February 2017, SPIE

    Dr Gerhard Klimeck

  24. Insights from simple models for surface states in nanostructures

    Article • European Journal of Physics, February 2017, Institute of Physics Publishing

    Dr Gerhard Klimeck

  25. Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness

    Article • IEEE Transactions on Electron Devices, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  26. Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene

    Article • IEEE Electron Device Letters, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  27. Performance degradation of superlattice MOSFETs due to scattering in the contacts

    Article • Journal of Applied Physics, December 2016, American Institute of Physics

    Dr Gerhard Klimeck

  28. A tunnel FET design for high-current, 120 mV operation

    Article • December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  29. Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs

    Article • IEEE Transactions on Nanotechnology, November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  30. P-Type Tunnel FETs With Triple Heterojunctions

    Article • IEEE Journal of the Electron Devices Society, November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  31. Creating impact in the digital space: digital practice dependency in communities of digital scientific innovations

    Article • Scientometrics, September 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

  32. Grain boundary resistance in nanoscale copper interconnections

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  33. Design Rules for High Performance Tunnel Transistors From 2-D Materials

    Article • IEEE Journal of the Electron Devices Society, September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  34. NEMO5: Predicting MoS2 heterojunctions

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  35. Characterizing Si:P quantum dot qubits with spin resonance techniques

    Article • Scientific Reports, August 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

  36. Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass

    Article • Scientific Reports, August 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

  37. Novel III-N heterostructure devices for low-power logic and more

    Article • August 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  38. Transport of spin qubits with donor chains under realistic experimental conditions

    Article • July 2016, American Physical Society (APS)

    Dr Gerhard Klimeck

  39. Transferable tight-binding model for strained group IV and III-V materials and heterostructures

    Article • July 2016, American Physical Society (APS)

    Dr Gerhard Klimeck

  40. From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling

    Article • IEEE Transactions on Electron Devices, July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  41. Multi-scale, multi-physics NEGF quantum transport for nitride LEDs

    Article • July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  42. Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots

    Article • IEEE Journal of Quantum Electronics, July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  43. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

    Article • Scientific Reports, June 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

  44. Incoherent transport in NEMO5: realistic and efficient scattering on phonons

    Article • Journal of Computational Electronics, June 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

  45. Exploring channel doping designs for high-performance tunneling FETs

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  46. Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  47. High-current InP-based triple heterojunction tunnel transistors

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  48. Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations

    Article • Physica B Condensed Matter, June 2016, Elsevier

    Dr Gerhard Klimeck

  49. Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

    Article • IEEE Journal of the Electron Devices Society, May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  50. Quantum simulation of the Hubbard model with dopant atoms in silicon

    Article • Nature Communications, April 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

  51. Highly tunable exchange in donor qubits in silicon

    Article • npj Quantum Information, April 2016, Nature

    Dr Gerhard Klimeck

  52. Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

    Article • Frontiers in Human Neuroscience, March 2016, American Institute of Physics

    Dr Gerhard Klimeck

  53. Categorizing Users of Cloud Services

    Article • Service Science, March 2016, INFORMS

    Dr Gerhard Klimeck

  54. General Retarded Contact Self-energies in and beyond the Non-equilibrium Green's Functions Method

    Article • Journal of Physics Conference Series, March 2016, Institute of Physics Publishing

    Dr Gerhard Klimeck

  55. High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction

    Article • IEEE Electron Device Letters, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  56. Surface Passivation in Empirical Tight Binding

    Article • IEEE Transactions on Electron Devices, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  57. Can Homojunction Tunnel FETs Scale Below 10 nm?

    Article • IEEE Electron Device Letters, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  58. Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

    Article • IEEE Electron Device Letters, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  59. Quantum Transport Simulation of III-V TFETs with Reduced-Order $$ \varvec{k} \cdot \varvec{p} $$ k · p Method

    Article • January 2016, Springer Science + Business Media

    Dr Gerhard Klimeck

  60. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

    Article • IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  61. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

    Article • IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  62. Electrically Tunable Bandgaps in Bilayer MoS2

    Article • Nano Letters, November 2015, American Chemical Society (ACS)

    Dr Gerhard Klimeck

  63. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

    Article • Journal of Applied Physics, October 2015, American Institute of Physics

    Dr Gerhard Klimeck

  64. 2D tunnel transistors for ultra-low power applications: Promises and challenges

    Article • October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  65. Dielectric Engineered Tunnel Field-Effect Transistor

    Article • IEEE Electron Device Letters, October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  66. In-surface confinement of topological insulator nanowire surface states

    Article • Frontiers in Human Neuroscience, September 2015, American Institute of Physics

    Dr Gerhard Klimeck

  67. Atomistic quantum transport approach to time-resolved device simulations

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  68. Electrically doped WTe2 tunnel transistors

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  69. Engineering the optical transitions of self-assembled quantum dots

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  70. Finite difference schemes for k ⋅ p models: A comparative study

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  71. Electrically doped 2D material tunnel transistor

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  72. Achieving a higher performance in bilayer graphene FET - strain engineering

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  73. Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  74. Quantum dot lab: an online platform for quantum dot simulations

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  75. The evaluation of non-topological components in Berry phase and momentum relaxation time in a gapped 3D topological insulator

    Article • Journal of Physics Condensed Matter, August 2015, Institute of Physics Publishing

    Dr Gerhard Klimeck

  76. Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators

    Article • Journal of Computational Electronics, August 2015, Springer Science + Business Media

    Dr Gerhard Klimeck

  77. Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution

    Article • Physical Review B, August 2015, American Physical Society (APS)

    Dr Gerhard Klimeck

  78. Interactive Analytic Systems for Understanding the Scholarly Impact of Large-Scale E-science Cyberenvironments

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  79. Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction

    Article • IEEE Transactions on Electron Devices, August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  80. Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)]

    Article • Journal of Applied Physics, July 2015, American Institute of Physics

    Dr Gerhard Klimeck

  81. Scaling Theory of Electrically Doped 2D Transistors

    Article • IEEE Electron Device Letters, July 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  82. Tunneling: The major issue in ultra-scaled MOSFETs

    Article • July 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  83. Strain and electric field control of hyperfine interactions for donor spin qubits in silicon

    Article • Physical Review B, June 2015, American Physical Society (APS)

    Dr Gerhard Klimeck

  84. Transistors for VLSI, for wireless: A view forwards through fog

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  85. Interface-induced heavy-hole/light-hole splitting of acceptors in silicon

    Article • Frontiers in Human Neuroscience, May 2015, American Institute of Physics

    Dr Gerhard Klimeck

  86. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    Article • Journal of Applied Physics, May 2015, American Institute of Physics

    Dr Gerhard Klimeck

  87. Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

    Article • Journal of Physics Condensed Matter, March 2015, Institute of Physics Publishing

    Professor Lloyd Hollenberg, Dr Gerhard Klimeck

  88. Design Guidelines for Sub-12 nm Nanowire MOSFETs

    Article • IEEE Transactions on Nanotechnology, March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  89. The influence of proximity induced ferromagnetism, superconductivity and Fermi-velocity on evolution of Berry phase in Bi2Se3 topological insulator

    Article • Semiconductor Science and Technology, February 2015, Institute of Physics Publishing

    Dr Gerhard Klimeck

  90. Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs

    Article • IEEE Transactions on Electron Devices, February 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  91. Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures

    Article • Journal of Applied Physics, January 2015, American Institute of Physics

    Dr Gerhard Klimeck

  92. Mythbusting Nanotechnology Knowledge Transfer through Novel Cyberinfrastructure

    Article • January 2015, Purdue University Press

    Dr Gerhard Klimeck

  93. nanoHUB.org: A Gateway to Undergraduate Simulation-Based Research in Materials Science and Related Fields

    Article • MRS Proceedings, January 2015, Cambridge University Press

    Dr Gerhard Klimeck

  94. Anisotropic strain in SmSe and SmTe: Implications for electronic transport

    Article • Physical Review B, December 2014, American Physical Society (APS)

    Dr Gerhard Klimeck

  95. Limits to Metallic Conduction in Atomic-Scale Quasi-One-Dimensional Silicon Wires

    Article • Physical Review Letters, December 2014, American Physical Society (APS)

    Dr Gerhard Klimeck

  96. Design and Simulation of Two-Dimensional Superlattice Steep Transistors

    Article • IEEE Electron Device Letters, December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  97. Coherent Control of a Single Si 29 Nuclear Spin Qubit

    Article • Physical Review Letters, December 2014, American Physical Society (APS)

    Dr Gerhard Klimeck

  98. Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon

    Article • Physical Review Letters, December 2014, American Physical Society (APS)

    Dr Gerhard Klimeck

  99. Non-equilibrium Green's functions method: Non-trivial and disordered leads

    Article • Frontiers in Human Neuroscience, November 2014, American Institute of Physics

    Dr Gerhard Klimeck

  100. Brillouin zone unfolding method for effective phonon spectra

    Article • Physical Review B, November 2014, American Physical Society (APS)

    Dr Gerhard Klimeck

  101. A Tight-Binding Study of Single-Atom Transistors

    Article • Small, October 2014, Wiley

    Dr Gerhard Klimeck

  102. More Moore landscape for system readiness - ITRS2.0 requirements

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  103. Quantum transport in NEMO5: Algorithm improvements and high performance implementation

    Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  104. Transistor roadmap projection using predictive full-band atomistic modeling

    Article • Frontiers in Human Neuroscience, August 2014, American Institute of Physics

    Dr Gerhard Klimeck

  105. Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots

    Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  106. Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

    Article • Frontiers in Human Neuroscience, June 2014, American Institute of Physics

    Dr Gerhard Klimeck

  107. Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  108. Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  109. Designing a large scale quantum computer with atomistic simulations

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  110. Performance degradation due to thicker physical layer of high k oxide in ultra-scaled MOSFETs and mitigation through electrostatics design

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  111. Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  112. Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors

    Article • ACS Nano, May 2014, American Chemical Society (ACS)

    Dr Gerhard Klimeck

  113. Spin blockade and exchange in Coulomb-confined silicon double quantum dots

    Article • Nature Nanotechnology, April 2014, Springer Science + Business Media

    Dr Gerhard Klimeck

  114. Spatially resolving valley quantum interference of a donor in silicon

    Article • Nature Materials, April 2014, Springer Science + Business Media

    Dr Gerhard Klimeck

  115. An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

    Article • Journal of Applied Physics, March 2014, American Institute of Physics

    Dr Gerhard Klimeck

  116. An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu condu...

    Article • Journal of Applied Physics, March 2014, American Institute of Physics

    Dr Gerhard Klimeck

  117. Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

    Article • Journal of Applied Physics, January 2014, American Institute of Physics

    Dr Gerhard Klimeck

  118. Mythbusting Today's Nanotechnology and Knowledge Transfer Through nanoHUB.org

    Article • January 2014, Purdue University Press

    Dr Gerhard Klimeck

  119. Tool-Based Curricula and Visual Learning

    Article • Electronics ETF, December 2013, National and University Library of the Republic of Srpska

    Dr Gerhard Klimeck

  120. Learning and research in the cloud

    Article • Nature Nanotechnology, November 2013, Nature

    Dr Gerhard Klimeck

  121. Efficient and realistic device modeling from atomic detail to the nanoscale

    Article • Journal of Computational Electronics, October 2013, Springer Science + Business Media

    Dr Gerhard Klimeck

  122. Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces

    Article • Frontiers in Human Neuroscience, September 2013, American Institute of Physics

    Dr Gerhard Klimeck

  123. Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L Valleys

    Article • IEEE Electron Device Letters, September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  124. A tight-binding study of channel modulation in atomic-scale Si:P nanowires

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  125. nanoHUB-U: A science gateway ventures into structured online education

    Article • August 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  126. Design principles for HgTe based topological insulator devices

    Article • Journal of Applied Physics, July 2013, American Institute of Physics

    Dr Gerhard Klimeck

  127. Silicon quantum electronics

    Article • Reviews of Modern Physics, July 2013, American Physical Society (APS)

    Dr Gerhard Klimeck

  128. Engineering Nanowire n-MOSFETs at $L_{g}<8~{\rm nm}$

    Article • IEEE Transactions on Electron Devices, July 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  129. Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

    Article • Mathematical and Computer Modelling, July 2013, Elsevier

    Dr Gerhard Klimeck

  130. Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

    Article • Nature Communications, June 2013, Springer Science + Business Media

    Dr Gerhard Klimeck

  131. Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons

    Article • Frontiers in Human Neuroscience, June 2013, American Institute of Physics

    Dr Gerhard Klimeck

  132. Low rank approximation method for efficient Green's function calculation of dissipative quantum transport

    Article • Journal of Applied Physics, June 2013, American Institute of Physics

    Dr Gerhard Klimeck

  133. Quantum corrected drift-diffusion simulation for prediction of CMOS scaling

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  134. Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  135. Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  136. Atomistic simulation of phonon and alloy limited hole mobility in Si1-x Ge x nanowires

    Article • physica status solidi (RRL) - Rapid Research Letters, May 2013, Wiley

    Dr Gerhard Klimeck

  137. Electron transport in nano-scaled piezoelectronic devices

    Article • Frontiers in Human Neuroscience, May 2013, American Institute of Physics

    Dr Gerhard Klimeck

  138. Noninvasive Spatial Metrology of Single-Atom Devices

    Article • Nano Letters, April 2013, American Chemical Society (ACS)

    Dr Gerhard Klimeck

  139. Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon

    Article • April 2013, Taylor & Francis

    Dr Gerhard Klimeck

  140. Probing scattering mechanisms with symmetric quantum cascade lasers

    Article • Optics Express, March 2013, Optical Society of America (OSA)

    Dr Gerhard Klimeck

  141. Utilizing the Unique Properties of Nanowire MOSFETs for RF Applications

    Article • Nano Letters, March 2013, American Chemical Society (ACS)

    Dr Gerhard Klimeck

  142. Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

    Article • Journal of Computational Electronics, January 2013, Springer Science + Business Media

    Dr Gerhard Klimeck

  143. Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett.107, 136602 (2011)]

    Article • Physical Review Letters, January 2013, American Physical Society (APS)

    Dr Gerhard Klimeck

  144. Atomistic modeling of metallic nanowires in silicon

    Article • Nanoscale, January 2013, Royal Society of Chemistry

    Dr Gerhard Klimeck

  145. nanoHUB.org: cloud-based services for nanoscale modeling, simulation, and education

    Article • Nanotechnology Reviews, January 2013, De Gruyter

    Dr Gerhard Klimeck

  146. Observation of 1D Behavior in Si Nanowires: Toward High-Performance TFETs

    Article • Nano Letters, October 2012, American Chemical Society (ACS)

    Dr Gerhard Klimeck

  147. Indirectly pumped 37 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

    Article • Optics Express, August 2012, Optical Society of America (OSA)

    Dr Gerhard Klimeck

  148. Design of high-current L-valley GaAs=AlAs0.56Sb0.44/InP (111) ultra-thin-body nMOSFETs

    Article • August 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  149. Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

    Article • IEEE Transactions on Electron Devices, August 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  150. Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

    Article • IEEE Transactions on Electron Devices, August 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  151. Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

    Article • Journal of Applied Physics, June 2012, American Institute of Physics

    Dr Gerhard Klimeck

  152. Archimedes, the free Monte Carlo simulator: A GNU package for submicron semiconductor devices on nanoHUB

    Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  153. Full-band study of ultra-thin Si:P nanowires

    Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  154. Multiband tight-binding model for strained and bilayer graphene from DFT calculations

    Article • May 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  155. Spectroscopy of a deterministic single-donor device in silicon

    Article • May 2012, SPIE

    Dr Gerhard Klimeck

  156. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

    Article • Nanotechnology, April 2012, Institute of Physics Publishing

    Dr Gerhard Klimeck

  157. Design of three-well indirect pumping terahertz quantum cascade lasers for high optical gain based on nonequilibrium Green’s function analysis

    Article • Frontiers in Human Neuroscience, March 2012, American Institute of Physics

    Dr Gerhard Klimeck

  158. Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport

    Article • Journal of Applied Physics, March 2012, American Institute of Physics

    Dr Gerhard Klimeck

  159. Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

    Article • Frontiers in Human Neuroscience, March 2012, American Institute of Physics

    Dr Gerhard Klimeck

  160. A single-atom transistor

    Article • Nature Nanotechnology, February 2012, Springer Science + Business Media

    Dr Gerhard Klimeck

  161. Calculation of phonon spectrum and thermal properties in suspended 〈100〉 In X Ga1−X As nanowires

    Article • Journal of Computational Electronics, February 2012, Springer Science + Business Media

    Dr Gerhard Klimeck

  162. Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing

    Article • Frontiers in Human Neuroscience, February 2012, American Institute of Physics

    Dr Gerhard Klimeck

  163. A two-dimensional domain decomposition technique for the simulation of quantum-scale devices

    Article • Journal of Computational Physics, February 2012, Elsevier

    Dr Gerhard Klimeck

  164. Ohm’s Law Survives to the Atomic Scale

    Article • Science, January 2012, American Association for the Advancement of Science

    Dr Gerhard Klimeck

  165. An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach

    Article • Journal of Computational Electronics, December 2011, Springer Science + Business Media

    Dr Gerhard Klimeck

  166. Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

    Article • Journal of Applied Physics, December 2011, American Institute of Physics

    Dr Giuseppe Carlo Tettamanzi, Dr Gerhard Klimeck

  167. Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors

    Article • Frontiers in Human Neuroscience, December 2011, American Institute of Physics

    Dr Gerhard Klimeck

  168. Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

    Article • Journal of Applied Physics, December 2011, American Institute of Physics

    Dr Gerhard Klimeck

  169. Single layer MoS2 band structure and transport

    Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  170. Ballistic hole injection velocity analysis in Ge UTB pMOSFETs: Dependence on body thickness, orientation and strain

    Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  171. Effects of interface roughness scattering on RF performance of nanowire transistors

    Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  172. Practical Considerations in Cloud Utilization for the Science Gateway nanoHUB.org

    Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  173. Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

    Article • Physical Review B, November 2011, American Physical Society (APS)

    Dr Gerhard Klimeck

  174. Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires

    Article • Journal of Applied Physics, November 2011, American Institute of Physics

    Dr Gerhard Klimeck

  175. NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

    Article • IEEE Transactions on Nanotechnology, November 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  176. Enhanced valence force field model for the lattice properties of gallium arsenide

    Article • Physical Review B, October 2011, American Physical Society (APS)

    Dr Gerhard Klimeck

  177. Contact modeling and analysis of InAs HEMT transistors

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  178. Network for Computational Nanotechnology - a strategic plan for global knowledge transfer in research and education

    Article • October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  179. Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

    Article • Physical Review B, September 2011, American Physical Society (APS)

    Dr Gerhard Klimeck

  180. Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

    Article • Physical Review B, September 2011, American Physical Society (APS)

    Dr Gerhard Klimeck

  181. Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade

    Article • Physical Review Letters, September 2011, American Physical Society (APS)

    Dr Gerhard Klimeck

  182. Role of surface orientation on atomic layer deposited Al2O3/GaAs interface structure and Fermi level pinning: A density functional theory study

    Article • Frontiers in Human Neuroscience, August 2011, American Institute of Physics

    Dr Gerhard Klimeck

  183. Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

    Article • Frontiers in Human Neuroscience, August 2011, American Institute of Physics

    Dr Gerhard Klimeck

  184. Distributed non-equilibrium Green’s function algorithms for the simulation of nanoelectronic devices with scattering

    Article • Journal of Applied Physics, August 2011, American Institute of Physics

    Dr Gerhard Klimeck

  185. Enhancement of thermoelectric efficiency by uniaxial tensile stress in n-type GaAs nanowires

    Article • August 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  186. NanoHUB.org - the ABACUS tool suite as a framework for semiconductor education courses

    Article • August 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  187. Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

    Article • Nanotechnology, July 2011, Institute of Physics Publishing

    Hubert Krenner, Dr Gerhard Klimeck

  188. Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

    Article • IEEE Transactions on Electron Devices, July 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  189. Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)]

    Article • Physical Review B, June 2011, American Physical Society (APS)

    Dr Gerhard Klimeck

  190. Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  191. The nanoelectronic modeling tool NEMO 5: Capabilities, validation, and application to Sb-heterostructures

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  192. A new method to achieve RF linearity in SOI nanowire MOSFETs

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  193. Model development for lattice properties of gallium arsenide using parallel genetic algorithm

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  194. Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

    Article • Physical Review B, May 2011, American Physical Society (APS)

    Dr Gerhard Klimeck

  195. Atomistic study of electronic structure of PbSe nanowires

    Article • Frontiers in Human Neuroscience, May 2011, American Institute of Physics

    Dr Gerhard Klimeck

  196. Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

    Article • Journal of Applied Physics, May 2011, American Institute of Physics

    Dr Gerhard Klimeck

  197. Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

    Article • Journal of Applied Physics, May 2011, American Institute of Physics

    Dr Gerhard Klimeck

  198. Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

    Article • IEEE Transactions on Electron Devices, May 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  199. Social Networks of Researchers and Educators on nanoHUB.org

    Article • May 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  200. Atomistic approach to alloy scattering in Si1−xGex

    Article • Frontiers in Human Neuroscience, April 2011, American Institute of Physics

    Dr Gerhard Klimeck

  201. Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs

    Article • IEEE Electron Device Letters, April 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Giuseppe Carlo Tettamanzi, Dr Gerhard Klimeck

  202. Stark tuning of the charge states of a two-donor molecule in silicon

    Article • Nanotechnology, April 2011, Institute of Physics Publishing

    Dr Gerhard Klimeck

  203. Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis

    Article • Journal of Applied Physics, March 2011, American Institute of Physics

    Dr Gerhard Klimeck

  204. Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

    Article • IEEE Electron Device Letters, March 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  205. Tuning lattice thermal conductance by porosity control in ultrascaled Si and Ge nanowires

    Article • Frontiers in Human Neuroscience, February 2011, American Institute of Physics

    Dr Gerhard Klimeck

  206. Current density and continuity in discretized models

    Article • European Journal of Physics, February 2011, Institute of Physics Publishing

    Dr Gerhard Klimeck

  207. Spin–orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures

    Article • New Journal of Physics, January 2011, Institute of Physics Publishing

    Dr Gerhard Klimeck

  208. Computational Study of the Electronic Performance of Cross-Plane Superlattice Peltier Devices

    Article • MRS Proceedings, January 2011, Cambridge University Press

    Dr Gerhard Klimeck

  209. Tuning lattice thermal conductance in ultra-scaled hollow SiNW: Role of porosity size, density and distribution

    Article • MRS Proceedings, January 2011, Cambridge University Press

    Dr Gerhard Klimeck

  210. Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

    Article • January 2011, ACM (Association for Computing Machinery)

    Dr Gerhard Klimeck

  211. Automated grid probe system to improve end-to-end grid reliability for a science gateway

    Article • January 2011, ACM (Association for Computing Machinery)

    Dr Gerhard Klimeck

  212. Multiscale Modeling of a Quantum Dot Heterostructure

    Article • MRS Proceedings, January 2011, Cambridge University Press

    Dr Gerhard Klimeck

  213. Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements

    Article • Frontiers in Human Neuroscience, December 2010, American Institute of Physics

    Dr Gerhard Klimeck

  214. Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations

    Article • December 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  215. Adaptive quadrature for sharply spiked integrands

    Article • Journal of Computational Electronics, October 2010, Springer Science + Business Media

    Dr Gerhard Klimeck

  216. Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

    Article • Journal of Computational Electronics, October 2010, Springer Science + Business Media

    Dr Gerhard Klimeck

  217. Coherent electron transport by adiabatic passage in an imperfect donor chain

    Article • Physical Review B, October 2010, American Physical Society (APS)

    Dr Gerhard Klimeck

  218. Rough interfaces in THz quantum cascade lasers

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  219. Valley degeneracy in (110) Si quantum wells strain and misorientation effects

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  220. A comprehensive atomistic analysis of bandstructure velocities in si nanowires

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  221. Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires

    Article • October 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  222. Quantum approach to electronic noise calculations in the presence of electron-phonon interactions

    Article • Physical Review B, September 2010, American Physical Society (APS)

    Dr Gerhard Klimeck

  223. Computational Study on the Performance of Si Nanowire pMOSFETs Based on the $k \cdot p$ Method

    Article • IEEE Transactions on Electron Devices, September 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  224. Innovative characterization techniques for ultra-scaled FinFETs

    Article • August 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  225. Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise

    Article • August 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  226. nanoHUB.org serving over 120,000 users worldwide: It's first cyber-environment assessment

    Article • August 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  227. Current density and continuity in discretized models

    Article • European Journal of Physics, July 2010, Institute of Physics Publishing

    Dr Gerhard Klimeck

  228. Computational Electronics

    Article • June 2010, Taylor & Francis

    Dr Gerhard Klimeck

  229. Scattering in Si-nanowires — Where does it matter?

    Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  230. Atomistic modeling of the thermoelectric power factor in ultra-scaled Silicon nanowires

    Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  231. Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

    Article • IEEE Electron Device Letters, June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  232. On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias

    Article • Journal of Applied Physics, June 2010, American Institute of Physics

    Dr Gerhard Klimeck

  233. Quantum transport in ultra-scaled phosphorous-doped silicon nanowires

    Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  234. Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

    Article • Journal of Applied Physics, April 2010, American Institute of Physics

    Dr Gerhard Klimeck

  235. Fullband Study of Ultra-Scaled Electron and Hole SiGe Nanowire FETs

    Article • April 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  236. Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

    Article • IEEE Electron Device Letters, April 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  237. Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

    Article • Physical Review B, March 2010, American Physical Society (APS)

    Dr Gerhard Klimeck

  238. Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

    Article • Computing in Science & Engineering, March 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  239. Cyber-Enabled Simulations in Nanoscale Science and Engineering

    Article • Computing in Science & Engineering, March 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  240. Numerical strategies towards peta-scale simulations of nanoelectronics devices

    Article • Parallel Computing, February 2010, Elsevier

    Dr Gerhard Klimeck

  241. Sub-threshold study of undoped trigate nFinFET

    Article • Thin Solid Films, February 2010, Elsevier

    Dr Gerhard Klimeck

  242. Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

    Article • IEEE Electron Device Letters, February 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  243. Strain-engineered self-organized InAs∕GaAs quantum dots for long wavelength (1.3 μm–1.5 μm) optical applications

    Article • January 2010, American Institute of Physics

    Dr Gerhard Klimeck

  244. Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys

    Article • Electrochemical and Solid-State Letters, January 2010, The Electrochemical Society

    Dr Gerhard Klimeck

  245. +Level Spectrum Of Single Gated As Donors

    Article • January 2010, American Institute of Physics

    Dr Gerhard Klimeck

  246. Performance analysis of ultra-scaled InAs HEMTs

    Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  247. Atomistic simulations for SiGe pMOS devices — Bandstructure to transport

    Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  248. Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

    Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  249. Study of ultra-scaled SiGe/Si core/shell nanowire FETs for CMOS applications

    Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  250. Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

    Article • Physical Review B, October 2009, American Physical Society (APS)

    Dr Gerhard Klimeck

  251. Orbital Stark effect and quantum confinement transition of donors in silicon

    Article • Physical Review B, October 2009, American Physical Society (APS)

    Dr Gerhard Klimeck

  252. Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

    Article • Physical Review B, October 2009, American Physical Society (APS)

    Dr Gerhard Klimeck

  253. Mapping Donor Electron Wave Function Deformations at a Sub-Bohr Orbit Resolution

    Article • Physical Review Letters, September 2009, American Physical Society (APS)

    Dr Gerhard Klimeck

  254. Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study

    Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck, Siegfried Selberherr

  255. Investigation of In_xGa_{1-x}As Ultra-Thin-Body Tunneling FETs Using a Full-Band and Atomistic Approach

    Article • September 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  256. Atomistic simulations of adiabatic coherent electron transport in triple donor systems

    Article • Physical Review B, July 2009, American Physical Society (APS)

    Dr Gerhard Klimeck

  257. Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB

    Article • Journal of Physics Conference Series, July 2009, Institute of Physics Publishing

    Dr Gerhard Klimeck

  258. Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  259. Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

    Article • IEEE Electron Device Letters, June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  260. Computational nanoelectronics research and education at nanoHUB.org

    Article • Journal of Computational Electronics, June 2009, Springer Science + Business Media

    Dr Gerhard Klimeck

  261. Indium gallium arsenide on silicon interband tunnel diodes for NDR-based memory and steep subthreshold slope transistor applications

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  262. Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

    Article • Frontiers in Human Neuroscience, June 2009, American Institute of Physics

    Dr Gerhard Klimeck

  263. Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  264. ABACUS and AQME: Semiconductor Device and Quantum Mechanics Education on nanoHUB.org

    Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  265. Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers

    Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  266. A Study of Temperature-dependent Properties of N-type d-doped Si Band-structures in Equilibrium

    Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  267. Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique

    Article • IEEE Electron Device Letters, May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  268. Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

    Article • IEEE Transactions on Nanotechnology, May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  269. On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

    Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  270. Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots

    Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  271. Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

    Article • April 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  272. Design Space for Low Sensitivity to Size Variations in [110] PMOS Nanowire Devices: The Implications of Anisotropy in the Quantization Mass

    Article • Nano Letters, February 2009, American Chemical Society (ACS)

    Dr Gerhard Klimeck

  273. Valley degeneracies in (111) silicon quantum wells

    Article • Frontiers in Human Neuroscience, January 2009, American Institute of Physics

    Dr Gerhard Klimeck

  274. Multimillion Atom Simulations with Nemo3D

    Article • January 2009, Springer Science + Business Media

    Dr Gerhard Klimeck

  275. Informations- und Kommunikationstechnologien für die Instandhaltungsplanung und -steuerung

    Article • January 2009, Springer Science + Business Media

    Dr Gerhard Klimeck

  276. Non-primitive rectangular cells for tight-binding electronic structure calculations

    Article • Physica E Low-dimensional Systems and Nanostructures, January 2009, Elsevier

    Dr Gerhard Klimeck

  277. From NEMO1D and NEMO3D to OMEN: Moving towards atomistic 3-D quantum transport in nano-scale semiconductors

    Article • December 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  278. Full-band and atomistic simulation of realistic 40 nm InAs HEMT

    Article • December 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  279. Transport-based dopant metrology in advanced FinFETs

    Article • December 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  280. Structures and energetics of silicon nanotubes from molecular dynamics and density functional theory

    Article • Physical Review B, November 2008, American Physical Society (APS)

    Dr Gerhard Klimeck

  281. A multi-level parallel simulation approach to electron transport in nano-scale transistors

    Article • November 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  282. Bandstructure Effects in Silicon Nanowire Hole Transport

    Article • IEEE Transactions on Nanotechnology, November 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  283. Computing entries of the inverse of a sparse matrix using the FIND algorithm

    Article • Journal of Computational Physics, November 2008, Elsevier

    Dr Gerhard Klimeck

  284. TeraGrid Science Gateways and Their Impact on Science

    Article • Computer, November 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  285. Contact Block Reduction method for ballistic quantum transport with semi-empirical sp3d5s* tight binding band models

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  286. Valley splitting in Si quantum dots embedded in SiGe

    Article • Frontiers in Human Neuroscience, September 2008, American Institute of Physics

    Dr Gerhard Klimeck

  287. Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

    Article • September 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  288. nanoHUB.org: Advancing Education and Research in Nanotechnology

    Article • Computing in Science & Engineering, September 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  289. OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices

    Article • August 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  290. A Tight Binding Study of Strain-Reduced Confinement Potentials in Identical and Non-Identical InAs/GaAs Vertically Stacked Quantum Dots

    Article • August 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  291. nanoHUB.org - Online Simulation and More Materials for Semiconductors and Nanoelectronics in Education and Research

    Article • August 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  292. Valley splitting in finite barrier quantum wells

    Article • Physical Review B, June 2008, American Physical Society (APS)

    Dr Gerhard Klimeck

  293. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

    Article • Nature Nanotechnology, June 2008, Springer Science + Business Media

    Dr Gerhard Klimeck

  294. Bandstructure Effects in Silicon Nanowire Electron Transport

    Article • IEEE Transactions on Electron Devices, June 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  295. Band-Structure Effects on the Performance of III–V Ultrathin-Body SOI MOSFETs

    Article • IEEE Transactions on Electron Devices, May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  296. Multiband transmission calculations for nanowires using an optimized renormalization method

    Article • Physical Review B, April 2008, American Physical Society (APS)

    Dr Gerhard Klimeck

  297. QUANTUM SIMULATIONS OF DUAL GATE MOSFET DEVICES: BUILDING AND DEPLOYING COMMUNITY NANOTECHNOLOGY SOFTWARE TOOLS ON NANOHUB.ORG

    Article • April 2008, World Scientific Pub Co Pte Lt

    Dr Gerhard Klimeck

  298. Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]

    Article • IEEE Transactions on Electron Devices, April 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  299. HUB is where the heart is

    Article • IEEE Nanotechnology Magazine, March 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  300. A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs

    Article • IEEE Transactions on Electron Devices, March 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  301. Building semiconductor nanostructures atom by atom

    Article • Microelectronics Journal, March 2008, Elsevier

    Dr Gerhard Klimeck

  302. Modeling and simulation of field-effect biosensors (BioFETs) and their deployment on the nanoHUB

    Article • Journal of Physics Conference Series, March 2008, Institute of Physics Publishing

    Dr Gerhard Klimeck

  303. Transport spectroscopy of a single atom in a FinFET

    Article • Journal of Physics Conference Series, March 2008, Institute of Physics Publishing

    Dr Gerhard Klimeck

  304. Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D

    Article • Journal of Computational Electronics, February 2008, Springer Science + Business Media

    Dr Gerhard Klimeck

  305. NEMO-3D based atomistic simulation of a double quantum dot structure for spin-blockaded transport

    Article • Journal of Computational Electronics, February 2008, Springer Science + Business Media

    Dr Gerhard Klimeck

  306. Simulations of nanowire transistors: atomistic vs. effective mass models

    Article • Journal of Computational Electronics, February 2008, Springer Science + Business Media

    Dr Gerhard Klimeck

  307. Atomistic non-equilibrium Green’s function simulations of Graphene nano-ribbons in the quantum hall regime

    Article • Journal of Computational Electronics, February 2008, Springer Science + Business Media

    Dr Gerhard Klimeck

  308. Determination of the eigenstates and wavefunctions of a single gated As donor

    Article • February 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  309. Electronic structure and transmission characteristics of SiGe nanowires

    Article • Journal of Computational Electronics, January 2008, Springer Science + Business Media

    Dr Gerhard Klimeck

  310. Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2008, American Vacuum Society

    Dr Gerhard Klimeck

  311. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

    Article • IEEE Transactions on Electron Devices, September 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  312. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications

    Article • IEEE Transactions on Electron Devices, September 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  313. QUANTUM SIMULATIONS OF DUAL GATE MOSFET DEVICES: BUILDING AND DEPLOYING COMMUNITY NANOTECHNOLOGY SOFTWARE TOOLS ON NANOHUB.ORG

    Article • International Journal of High Speed Electronics and Systems, September 2007, World Scientific Pub Co Pte Lt

    Dr Gerhard Klimeck

  314. High Precision Quantum Control of Single Donor Spins in Silicon

    Article • Physical Review Letters, July 2007, American Physical Society (APS)

    Dr Gerhard Klimeck

  315. Quantum transport with spin dephasing: A nonequlibrium Green’s function approach

    Article • Physical Review B, July 2007, American Physical Society (APS)

    Dr Gerhard Klimeck

  316. Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕

    Article • Physical Review B, July 2007, American Physical Society (APS)

    Dr Gerhard Klimeck

  317. Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors

    Article • IEEE Transactions on Nanotechnology, July 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  318. Evolution time and energy uncertainty

    Article • European Journal of Physics, May 2007, Institute of Physics Publishing

    Dr Gerhard Klimeck

  319. Influence of vacancies on metallic nanotube transport properties

    Article • Frontiers in Human Neuroscience, April 2007, American Institute of Physics

    Dr Gerhard Klimeck

  320. Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor

    Article • Nano Letters, March 2007, American Chemical Society (ACS)

    Dr Gerhard Klimeck

  321. Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

    Article • Frontiers in Human Neuroscience, February 2007, American Institute of Physics

    Dr Gerhard Klimeck

  322. Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection

    Article • Journal of Computational Electronics, January 2007, Springer Science + Business Media

    Dr Gerhard Klimeck

  323. Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancy defects

    Article • Journal of Computational Electronics, January 2007, Springer Science + Business Media

    Dr Gerhard Klimeck

  324. Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

    Article • Journal of Physics Condensed Matter, January 2007, Institute of Physics Publishing

    Dr Gerhard Klimeck

  325. NanoHUB.org Tutorial: Education Simulation Tools

    Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  326. Electronic Structure of Si/InAs Composite Channels

    Article • MRS Proceedings, January 2007, Springer Science + Business Media

    Dr Gerhard Klimeck

  327. Symmetry Breaking and Fine Structure Splitting in Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field

    Article • January 2007, American Institute of Physics

    Dr Gerhard Klimeck

  328. A Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and Transmission

    Article • January 2007, American Institute of Physics

    Dr Gerhard Klimeck

  329. Atomistic Simulation of Non-Degeneracy and Optical Polarization Anisotropy in Pyramidal Quantum Dots

    Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  330. Nanoelectronics: Metrology and Computation

    Article • January 2007, American Institute of Physics

    Dr Gerhard Klimeck

  331. Strain and electronic structure interactions in realistically-scaled quantum dot stacks

    Article • January 2007, American Institute of Physics

    Dr Gerhard Klimeck

  332. The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires

    Article • IEEE Transactions on Nanotechnology, January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  333. EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires

    Article • Journal of Computational Electronics, December 2006, Springer Science + Business Media

    Dr Gerhard Klimeck

  334. Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs

    Article • Journal of Computational Electronics, December 2006, Springer Science + Business Media

    Dr Gerhard Klimeck

  335. The national center for the design of biomimetic nanoconductors

    Article • Nanomedicine Nanotechnology Biology and Medicine, December 2006, Elsevier

    Dr Gerhard Klimeck

  336. Atomistic simulation of nanowires in thesp3d5

    Article • Physical Review B, November 2006, American Physical Society (APS)

    Dr Gerhard Klimeck

  337. Investigation of device parameters for field-effect DNA-sensors by three-dimensional simulation

    Article • October 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  338. Hub-based Simulation and Graphics Hardware Accelerated Visualization for Nanotechnology Applications

    Article • IEEE Transactions on Visualization and Computer Graphics, September 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  339. The impact of the nanoscale vision on the future of learning and teaching

    Article • August 2006, SPIE

    Dr Gerhard Klimeck

  340. A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry

    Article • IEEE Transactions on Electron Devices, August 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  341. Atomistic simulations of long-range strain and spatial asymmetry molecular states of seven quantum dots

    Article • Journal of Physics Conference Series, May 2006, Institute of Physics Publishing

    Dr Gerhard Klimeck

  342. Experimental verification of an optical negative-index material

    Article • Laser Physics Letters, January 2006, Institute of Physics Publishing

    Dr Gerhard Klimeck

  343. Short course IV Nano hub

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  344. Conduction-band tight-binding description for Si applied to P donors

    Article • Physical Review B, November 2005, American Physical Society (APS)

    Dr Gerhard Klimeck

  345. Allowed wavevectors under the application of incommensurate periodic boundary conditions

    Article • European Journal of Physics, November 2005, Institute of Physics Publishing

    Dr Gerhard Klimeck

  346. Interactions of Fano resonances in the transmission of an Aharonov-Bohm ring with two embedded quantum dots in the presence of a magnetic field

    Article • Physical Review B, September 2005, American Physical Society (APS)

    Dr Gerhard Klimeck

  347. The discretized Schrödinger equation for the finite square well and its relationship to solid-state physics

    Article • European Journal of Physics, July 2005, Institute of Physics Publishing

    Dr Gerhard Klimeck

  348. On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire Transistors

    Article • IEEE Transactions on Electron Devices, July 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  349. Electronic Properties of Silicon Nanowires

    Article • IEEE Transactions on Electron Devices, June 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  350. Quantum cascade laser gain medium modeling using a second-nearest-neighbor tight-binding model

    Article • Superlattices and Microstructures, June 2005, Elsevier

    Dr Gerhard Klimeck

  351. Valley splitting in V-shaped quantum wells

    Article • Journal of Applied Physics, May 2005, American Institute of Physics

    Dr Gerhard Klimeck

  352. Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si

    Article • Japanese Journal of Applied Physics, April 2005, Japan Society of Applied Physics

    Dr Gerhard Klimeck

  353. Practical application of zone-folding concepts in tight-binding calculations

    Article • Physical Review B, March 2005, American Physical Society (APS)

    Dr Gerhard Klimeck

  354. Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations

    Article • Frontiers in Human Neuroscience, February 2005, American Institute of Physics

    Dr Gerhard Klimeck

  355. Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

    Article • Journal of Applied Physics, January 2005, American Institute of Physics

    Dr Gerhard Klimeck

  356. Evolutionary computation technologies for space systems

    Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  357. Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures

    Article • Frontiers in Human Neuroscience, November 2004, American Institute of Physics

    Dr Gerhard Klimeck

  358. Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models

    Article • Physical Review B, October 2004, American Physical Society (APS)

    Dr Gerhard Klimeck

  359. Editorial

    Article • Journal of Computational Electronics, October 2004, Springer Science + Business Media

    Dr Gerhard Klimeck

  360. Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

    Article • Physical Review B, September 2004, American Physical Society (APS)

    Dr Gerhard Klimeck

  361. The discretized Schrödinger equation and simple models for semiconductor quantum wells

    Article • European Journal of Physics, May 2004, Institute of Physics Publishing

    Dr Gerhard Klimeck

  362. Smooth Quantum Hydrodynamic Model vs. NEMO Simulation of Resonant Tunneling Diodes

    Article • Journal of Computational Electronics, April 2004, Springer Science + Business Media

    Dr Gerhard Klimeck

  363. Valence band effective-mass expressions in thesp3<...

    Article • Physical Review B, March 2004, American Physical Society (APS)

    Dr Gerhard Klimeck

  364. Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures

    Article • Physical Review B, January 2004, American Physical Society (APS)

    Dr Gerhard Klimeck

  365. Valley splitting in strained silicon quantum wells

    Article • Frontiers in Human Neuroscience, January 2004, American Institute of Physics

    Dr Gerhard Klimeck

  366. NEMO 1-D: the first NEGF-based TCAD tool

    Article • January 2004, Springer Science + Business Media

    Dr Gerhard Klimeck

  367. Quantum and Semi-Classical Transport in NEMO 1-D

    Article • Journal of Computational Electronics, December 2003, Springer Science + Business Media

    Dr Gerhard Klimeck

  368. Off-center electron transport in resonant tunneling diodes due to incoherent scattering

    Article • Physical Review B, September 2003, American Physical Society (APS)

    Dr Gerhard Klimeck

  369. An atomistic model for the simulation of acoustic phonons, strain distribution, and Grüneisen coefficients in zinc-blende semiconductors

    Article • Superlattices and Microstructures, September 2003, Elsevier

    Dr Gerhard Klimeck

  370. Strain effects in large-scale atomistic quantum dot simulations

    Article • physica status solidi (b), September 2003, Wiley

    Dr Gerhard Klimeck

  371. Disorder induced broadening in multimillion atom alloyed quantum dot systems

    Article • physica status solidi c, July 2003, Wiley

    Dr Gerhard Klimeck

  372. Comparison of numerical quantum device models

    Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck, Siegfried Selberherr

  373. Full band modeling of the excess current in a delta-doped silicon tunnel diode

    Article • Journal of Applied Physics, January 2003, American Institute of Physics

    Dr Gerhard Klimeck

  374. Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding

    Article • Physical Review B, December 2002, American Physical Society (APS)

    Dr Gerhard Klimeck

  375. Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory

    Article • Physical Review B, September 2002, American Physical Society (APS)

    Dr Gerhard Klimeck

  376. 3-D atomistic nanoelectronic modeling on high performance clusters: multimillion atom simulations

    Article • Superlattices and Microstructures, February 2002, Elsevier

    Dr Gerhard Klimeck

  377. Article • Journal of Computational Electronics, January 2002, Springer Science + Business Media

    Dr Gerhard Klimeck

  378. Article • Journal of Computational Electronics, January 2002, Springer Science + Business Media

    Dr Gerhard Klimeck

  379. The use of cluster computer systems for NASA/JPL applications

    Article • August 2001, American Institute of Aeronautics and Astronautics (AIAA)

    Dr Gerhard Klimeck

  380. Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

    Article • physica status solidi (b), July 2001, Wiley

    Dr Gerhard Klimeck

  381. Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

    Article • physica status solidi (b), July 2001, Wiley

    Dr Gerhard Klimeck

  382. Electromagnetic coupling and gauge invariance in the empirical tight-binding method

    Article • Physical Review B, June 2001, American Physical Society (APS)

    Dr Gerhard Klimeck

  383. Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions

    Article • April 2001, American Physical Society (APS)

    Dr Gerhard Klimeck

  384. Off-zone-center or indirect band-gap-like hole transport in heterostructures

    Article • Physical Review B, April 2001, American Physical Society (APS)

    Dr Gerhard Klimeck

  385. Mechanical modeling of fretting cycles in electrical contacts

    Article • Wear, April 2001, Elsevier

    Dr Gerhard Klimeck

  386. Strong wavevector dependence of hole transport in heterostructures

    Article • Superlattices and Microstructures, March 2001, Elsevier

    Dr Gerhard Klimeck

  387. Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

    Article • Frontiers in Human Neuroscience, February 2001, American Institute of Physics

    Dr Gerhard Klimeck

  388. sp3s*Tight-binding parameters for transport simulations in compound semiconductors

    Article • Superlattices and Microstructures, May 2000, Elsevier

    Dr Gerhard Klimeck

  389. Erratum: Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results [Phys. Rev. B56, 4102 (1997)]

    Article • February 2000, American Physical Society (APS)

    Dr Gerhard Klimeck

  390. Si tight-binding parameters from genetic algorithm fitting

    Article • Superlattices and Microstructures, February 2000, Elsevier

    Dr Gerhard Klimeck

  391. Resonant-tunneling diodes with emitter prewells

    Article • Frontiers in Human Neuroscience, August 1999, American Institute of Physics

    Dr Gerhard Klimeck

  392. Interface effects in tunneling models with identical real and complex dispersions

    Article • March 1999, American Physical Society (APS)

    Dr Gerhard Klimeck

  393. Valence-band warping in tight-binding models

    Article • Physical Review B, March 1999, American Physical Society (APS)

    Dr Gerhard Klimeck

  394. Integrated design and optimization of microelectronic devices

    Article • January 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  395. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

    Article • Frontiers in Human Neuroscience, October 1998, American Institute of Physics

    Dr Gerhard Klimeck

  396. Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations

    Article • September 1998, American Physical Society (APS)

    Dr Gerhard Klimeck

  397. Interface roughness and polar optical phonon scattering in RTDs

    Article • Semiconductor Science and Technology, August 1998, Institute of Physics Publishing

    Dr Gerhard Klimeck

  398. Numerical approximations to the treatment of interface roughness scattering in resonant tunnelling diodes

    Article • Semiconductor Science and Technology, August 1998, Institute of Physics Publishing

    Dr Gerhard Klimeck

  399. Genetically Engineered Nanostructure Devices

    Article • MRS Proceedings, January 1998, Springer Science + Business Media

    Dr Gerhard Klimeck

  400. A Generalized Tunneling Formula for Quantum Device Modeling

    Article • VLSI Design, January 1998, Hindawi Publishing Corporation

    Dr Gerhard Klimeck

  401. Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO)

    Article • VLSI Design, January 1998, Hindawi Publishing Corporation

    Dr Gerhard Klimeck

  402. Quantum Transport with Band-Structure and Schottky Contacts

    Article • physica status solidi (b), November 1997, Wiley

    Dr Gerhard Klimeck

  403. The Effects of Electron Screening Length and Emitter Quasi-Bound States on the Polar-Optical Phonon Scattering in Resonant Tunneling Diodes

    Article • physica status solidi (b), November 1997, Wiley

    Dr Gerhard Klimeck

  404. Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results

    Article • August 1997, American Physical Society (APS)

    Dr Gerhard Klimeck

  405. Single and multiband modeling of quantum electron transport through layered semiconductor devices

    Article • Journal of Applied Physics, June 1997, American Institute of Physics

    Dr Gerhard Klimeck

  406. Quantitative simulation of a resonant tunneling diode

    Article • Journal of Applied Physics, April 1997, American Institute of Physics

    Dr Gerhard Klimeck

  407. Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode

    Article • Superlattices and Microstructures, October 1996, Elsevier

    Dr Gerhard Klimeck

  408. Ultrafast characteristics of InGaP-InGaAlP laser amplifiers

    Article • IEEE Journal of Quantum Electronics, April 1996, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  409. Quantum device simulation with a generalized tunneling formula

    Article • Frontiers in Human Neuroscience, October 1995, American Institute of Physics

    Dr Gerhard Klimeck

  410. Transmission resonances and zeros in multiband models

    Article • Physical Review B, July 1995, American Physical Society (APS)

    Dr Gerhard Klimeck

  411. Resonant tunneling through quantum-dot arrays

    Article • September 1994, American Physical Society (APS)

    Dr Gerhard Klimeck

  412. Elastic and inelastic scattering in quantum dots in the Coulomb-blockade regime

    Article • August 1994, American Physical Society (APS)

    Dr Gerhard Klimeck

  413. Conductance spectroscopy in coupled quantum dots

    Article • Physical Review B, July 1994, American Physical Society (APS)

    Dr Gerhard Klimeck

  414. Electrical and physical modeling of contact defects due to fretting

    Article • IEEE Transactions on Components Packaging and Manufacturing Technology Part A, March 1994, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  415. Rate equations for the phonon peak in resonant-tunneling structures

    Article • November 1993, American Physical Society (APS)

    Dr Gerhard Klimeck

  416. Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes

    Article • March 1993, American Physical Society (APS)

    Dr Gerhard Klimeck

  417. Quantum kinetic analysis of mesoscopic systems: Linear response

    Article • Superlattices and Microstructures, January 1992, Elsevier

    Dr Gerhard Klimeck

  418. Laser-bandwidth-induced fluctuations in the intensity transmitted by a Fabry-Pérot interferometer

    Article • Physical Review A, September 1991, American Physical Society (APS)

    Dr Gerhard Klimeck

  419. Generation and intensity-correlation measurements of the real Gaussian field

    Article • Physical Review A, June 1990, American Physical Society (APS)

    Dr Gerhard Klimeck

  420. Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets

    Article • Springer Science + Business Media

    Dr Gerhard Klimeck

  421. Tunnel transistors

    Article • Cambridge University Press

    Dr Gerhard Klimeck

  422. Increasing Contributions in an Online Scientific Community: The Effect of Virtual Rewards, Social Messages and Observation Cuess

    Article • SSRN Electronic Journal, Social Science Electronic Publishing

    Dr Gerhard Klimeck

  423. A Parallel Sparse Linear Solver for Nearest-Neighbor Tight-Binding Problems

    Article • Springer Science + Business Media

    Dr Gerhard Klimeck

  424. Genetically engineered microelectronic infrared filters

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  425. Modeling and simulation nanowires and nanotubes

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  426. The NCN: Science, Simulation, and Cyber Services

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  427. Building and deploying community nanotechnology software tools on nanoHUB.org - atomistic simulations of multimillion-atom quantum dot nanostructures

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  428. Evolutionary Computation Technologies for the Automated Design of Space Systems

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  429. Three-dimensional atomistic simulation of carbon nanotube FETs with realistic geometry

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  430. VolQD: Direct Volume Rendering of Multi-million Atom Quantum Dot Simulations

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  431. Bandstructure effects in ballistic nanoscale MOSFETs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  432. Evolutionary computing for spacecraft power subsystem design search and optimization

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  433. Quantum cascade laser simulation using an sp/sup 3/s* full Brillouin zone tight-binding model

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  434. Nanoelectronic 3-D (NEMO 3-D) simulation of multimillion atom quantum dot systems

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  435. "Genetically engineered" nanoelectronics

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  436. Evolution of analog circuits on field programmable transistor arrays

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  437. Transverse momentum dependence of electron and hole tunneling in a full band tight-binding simulation [resonant tunnelling diodes]

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  438. Evolutionary design of electronic devices and circuits

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  439. Nano electronic modelling (NEMO)

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  440. Mechanical modeling of fretting cycles of electrical contacts

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  441. NEMO: general release of a new comprehensive quantum device simulator

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  442. Resonant tunneling in disordered materials such as SiO/sub 2//Si/SiO/sub 2/

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  443. Ultralow current density RTDs for tunneling-based SRAM

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  444. Physical oxide thickness extraction and verification using quantum mechanical simulation

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  445. Experimentally verified quantum device simulations based on multiband models, Hartree self-consistency, and scattering assisted charging

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck

  446. Efficient I-V simulation of quantum devices using full bandstructure models

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Gerhard Klimeck