All Stories

  1. Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

    Article • APL Materials, March 2022, American Institute of Physics

    Firman Simanjuntak, Dr Julianna Panidi

  2. Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

    Article • Applied Physics Letters, August 2020, American Institute of Physics

    Firman Simanjuntak