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  1. Application of Floquet theory to dynamical systems with memory

    Article • Chaos An Interdisciplinary Journal of Nonlinear Science, December 2020, American Institute of Physics

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  2. Analysis of influence of nonlinearities and noise correlation time in a single-DOF energy-harvesting system via power balance description

    Article • Nonlinear Dynamics, March 2020, Springer Science + Business Media

    prof. Fabrizio Bonani

  3. Colored Noise in Oscillators. Phase-Amplitude Analysis and a Method to Avoid the itô-Stratonovich Dilemma

    Article • IEEE Transactions on Circuits and Systems I Regular Papers, October 2019, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  4. Physically-based statistical analysis of nonlinear circuits through X-parameters

    Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  5. TCAD analysis of FinFET temperature-dependent variability for analog applications

    Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  6. Physics-based Analysis to Address Critical Aspects of FinFET Mm-wave Applications: Variability and Thermal Management

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  7. Efficient Sensitivity and Variability Analysis of Nonlinear Microwave Stages Through Concurrent TCAD and EM Modeling

    Article • IEEE Journal on Multiscale and Multiphysics Computational Techniques, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  8. Modeling Techniques for Electronic Noise and Process Variability in Nanoscale Devices

    Article • October 2018, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  9. Logic Gates Implementation with Coupled Oscillators

    Article • October 2018, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  10. A Novel TCAD Approach to Temperature Dependent DC FinFET Variability Analysis

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  11. A novel approach to the electro-thermal sensitivity analysis of electron devices through efficient physics-based simulations

    Article • July 2018, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  12. Efficient spectral domain technique for the frequency locking analysis of nonlinear oscillators

    Article • The European Physical Journal Plus, July 2018, Springer Science + Business Media

    prof. Fabrizio Bonani

  13. RF sensitivity analysis of independent-gates FinFETs for analog applications exploiting the back-gating effect

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  14. Kuramoto-like model of noisy oscillators

    Article • September 2017, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  15. Vibration energy harvesting enhancement in systems with modulated noise

    Article • September 2017, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  16. Variability of FinFET AC parameters: A physics-based insight

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, August 2017, Wiley

    prof. Fabrizio Bonani

  17. Multi-Gate FinFET Mixer Variability Assessment Through Physics-Based Simulation

    Article • IEEE Electron Device Letters, August 2017, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  18. A comprehensive technique for the assessment of microwave circuit design variability through physical simulations

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  19. Efficient vibration energy harvesting through noise induced transitions

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  20. Physics-based modeling of FinFET RF variability under Shorted- and Independent-Gates bias

    Article • April 2017, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  21. Concurrent Efficient Evaluation of Small-Change Parameters and Green’s Functions for TCAD Device Noise and Variability Analysis

    Article • IEEE Transactions on Electron Devices, March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  22. Large-signal variability of microwave power amplifiers through efficient device sensitivity-based physical modeling

    Article • International Journal of RF and Microwave Computer-Aided Engineering, February 2017, Wiley

    prof. Fabrizio Bonani

  23. Physics-based modeling of FinFET RF variability

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  24. Influence of Amplitude Fluctuations on the Noise-Induced Frequency Shift of Noisy Oscillators

    Article • IEEE Transactions on Circuits & Systems II Express Briefs, July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  25. A novel approach to microwave circuit large-signal variability analysis through efficient device sensitivity-based physical modeling

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  26. A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions—Part I: Large-Signal Sensitivity

    Article • IEEE Transactions on Electron Devices, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  27. A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II—Small-Signal and Conversion Matrix Sensitivity

    Article • IEEE Transactions on Electron Devices, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  28. Phase noise spectrum of oscillators described by Itô stochastic differential equations

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  29. Memcomputing NP-complete problems in polynomial time using polynomial resources and collective states

    Article • Science Advances, July 2015, American Association for the Advancement of Science

    prof. Fabrizio Bonani, Massimiliano Di Ventra

  30. Phase and amplitude dynamics of noisy oscillators described by Itô stochastic differential equations

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  31. Noise in oscillators: a review of state space decomposition approaches

    Article • Journal of Computational Electronics, December 2014, Springer Science + Business Media

    prof. Fabrizio Bonani

  32. Cyclostationary noise modeling of radio frequency devices

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, November 2014, Wiley

    prof. Fabrizio Bonani

  33. Floquet-Based Stability Analysis of Power Amplifiers Including Distributed Elements

    Article • IEEE Microwave and Wireless Components Letters, July 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  34. Dynamic computing random access memory

    Article • Nanotechnology, June 2014, Institute of Physics Publishing

    Yuriy Pershin, prof. Fabrizio Bonani, Massimiliano Di Ventra

  35. Dynamic computing random access memory: A brain-inspired computing paradigm with memelements

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  36. A surface-potential-based MOSFET compact model accounting for random doping fluctuations

    Article • International Journal of Numerical Modelling Electronic Networks Devices and Fields, December 2013, Wiley

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  37. A new numerical approach for the efficient computation of Floquet multipliers within the harmonic balance technique

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  38. A 2D driven brownian particle with memory

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  39. A green's function approach to the analysis of non volatile memory device variability as a function of individual trap position

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  40. Generalized Floquet Theory: Application to Dynamical Systems with Memory and Bloch’s Theorem for Nonlocal Potentials

    Article • Physical Review Letters, April 2013, American Physical Society (APS)

    prof. Fabrizio Bonani

  41. Large-Signal Stability of Symmetric Multibranch Power Amplifiers Exploiting Floquet Analysis

    Article • IEEE Transactions on Microwave Theory and Techniques, April 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  42. Application of Floquet theory to the large signal stability analysis of microwave amplifiers

    Article • April 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  43. RF and Microwave Semiconductor Technologies

    Article • February 2013, Wiley

    prof. Fabrizio Bonani

  44. Selective Determination of Floquet Quantities for the Efficient Assessment of Limit Cycle Stability and Oscillator Noise

    Article • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, February 2013, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  45. Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis

    Article • September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  46. Improved harmonic balance implementation of Floquet analysis for nonlinear circuit simulation

    Article • AEU - International Journal of Electronics and Communications, May 2012, Elsevier

    prof. Fabrizio Bonani

  47. Oscillator Noise: A Nonlinear Perturbative Theory Including Orbital Fluctuations and Phase-Orbital Correlation

    Article • IEEE Transactions on Circuits and Systems I Regular Papers, October 2011, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  48. Modeling and simulation of noise in transistors under large-signal condition

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  49. A rigorous analysis of oscillator noise including orbital fluctuations

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  50. Analytical assessment of orbital noise effects in ring oscillators

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  51. ASYMPTOTIC STOCHASTIC CHARACTERIZATION OF PHASE AND AMPLITUDE NOISE IN FREE-RUNNING OSCILLATORS

    Article • Fluctuation and Noise Letters, June 2011, World Scientific Pub Co Pte Lt

    prof. Fabrizio Bonani

  52. An Improved Methodology for the CAD Optimization of Multiple Floating Field-Limiting Ring Terminations

    Article • IEEE Transactions on Electron Devices, January 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  53. Frequency-domain evaluation of the adjoint Floquet eigenvectors for oscillator noise characterisation

    Article • IET Circuits Devices & Systems, January 2011, the Institution of Engineering and Technology (the IET)

    prof. Fabrizio Bonani

  54. A Generalized Drift-Diffusion Model for Rectifying Schottky Contact Simulation

    Article • IEEE Transactions on Electron Devices, July 2010, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  55. Oscillator noise: a rigorous analysis including orbital fluctuations

    Article • January 2010, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  56. Assessment of Thermal Instabilities and Oscillations in Multifinger Heterojunction Bipolar Transistors Through a Harmonic-Balance-Based CAD-Oriented Dynamic Stability Analysis Technique

    Article • IEEE Transactions on Microwave Theory and Techniques, December 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  57. Assessment of surge current capabilities of SiC-based high-power diodes through physics-based mixed-mode electro-thermal simulations

    Article • December 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  58. HB-based CAD-oriented dynamic stability analysis of circuits and devices: Application to the assessment of thermal instabilities in multifinger HBTs

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  59. A frequency-domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential-algebraic equations (Int. J. Circ. Theor. Appl.(DOI: 10.1002/cta.440))

    Article • International Journal of Circuit Theory and Applications, June 2009, Wiley

    prof. Fabrizio Bonani

  60. Low-frequency noise in nonlinear systems

    Article • IEEE Microwave Magazine, February 2009, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  61. A novel numerical approach for the frequency-domain calculation of oscillator noise

    Article • January 2009, American Institute of Physics

    prof. Fabrizio Bonani

  62. A novel, rigorous approach to the dynamic, large-signal stability analysis of semiconductor devices and circuits under electro-thermal interaction

    Article • December 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  63. Novel TCAD-Oriented Definition of the off-State Breakdown Voltage in Schottky-Gate FETs: A 4H–SiC MESFET Case Study

    Article • IEEE Transactions on Electron Devices, December 2008, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  64. Large‐signal device simulation in time‐ and frequency‐domain: a comparison

    Article • COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, November 2008, Emerald

    prof. Fabrizio Bonani

  65. A critical discussion of the current collapse in multifinger HBTs based on Floquet stability analysis

    Article • November 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  66. When self-consistency makes a difference

    Article • IEEE Microwave Magazine, October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, Professor Vittorio Camarchia, prof. Fabrizio Bonani

  67. A rigorous assessment of electro-thermal device instabilities via Harmonic Balance modeling

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  68. A rigorous assessment of electro-thermal device instabilities via Harmonic Balance modeling

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  69. A frequency-domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential-algebraic equations

    Article • International Journal of Circuit Theory and Applications, January 2008, Wiley

    prof. Fabrizio Bonani

  70. On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs

    Article • IEEE Transactions on Electron Devices, July 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  71. Application of physical models to circuit simulations

    Article • June 2007, SPIE

    prof. Fabrizio Bonani

  72. Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide

    Article • Solid-State Electronics, March 2007, Elsevier

    prof. Fabrizio Bonani

  73. Innovative techniques for device large-signal noise simulations

    Article • January 2007, American Institute of Physics

    prof. Fabrizio Bonani

  74. Kinetic and Partial-Differential Equation Modeling of Noise in Schottky Barrier Diodes: a Comparison

    Article • January 2007, American Institute of Physics

    prof. Fabrizio Bonani

  75. An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators

    Article • Journal of Computational Electronics, July 2006, Springer Science + Business Media

    prof. Fabrizio Bonani

  76. Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices

    Article • IEEE Transactions on Microwave Theory and Techniques, June 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  77. Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes

    Article • Microelectronics Journal, March 2006, Elsevier

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  78. Physics-based Mixer Noise Simulation

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  79. Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model

    Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Federica Cappelluti, prof. Fabrizio Bonani

  80. Low-frequency noise conversion modeling in RF devices under forced nonlinear operation

    Article • International Journal of RF and Microwave Computer-Aided Engineering, January 2005, Wiley

    prof. Fabrizio Bonani

  81. Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions

    Article • January 2005, American Institute of Physics

    prof. Fabrizio Bonani

  82. Two-dimensional physics-based low-frequency noise modeling of bipolar semiconductor devices in small- and large-signal operation

    Article • January 2005, American Institute of Physics

    prof. Fabrizio Bonani

  83. Simulation of cyclostationary noise in semiconductor devices

    Article • May 2004, SPIE

    prof. Fabrizio Bonani

  84. Small- and large-signal trap-assisted GR noise modeling in semiconductor devices

    Article • May 2004, SPIE

    prof. Fabrizio Bonani

  85. Compact Conversion and Cyclostationary Noise Modeling of pn–Junction Diodes in Low-Injection—Part I: Model Derivation

    Article • IEEE Transactions on Electron Devices, March 2004, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  86. Compact Conversion and Cyclostationary Noise Modeling of pn–Junction Diodes in Low-Injection—Part II: Discussion

    Article • IEEE Transactions on Electron Devices, March 2004, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  87. Comments on "Noise source modeling for cyclostationary noise analysis in large-signal device operation"

    Article • IEEE Transactions on Electron Devices, October 2003, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  88. Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications

    Article • IEEE Transactions on Electron Devices, March 2003, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  89. Noise source modeling for cyclostationary noise analysis in large-signal device operation

    Article • IEEE Transactions on Electron Devices, September 2002, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  90. A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation

    Article • IEEE Transactions on Electron Devices, May 2001, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  91. Noise in Semiconductor Devices

    Article • January 2001, Springer Science + Business Media

    prof. Fabrizio Bonani

  92. Analysis of stability and bifurcations of limit cycles in Chua's circuit through the harmonic-balance approach

    Article • IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications, January 1999, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  93. An efficient approach to noise analysis through multidimensional physics-based models

    Article • IEEE Transactions on Electron Devices, January 1998, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  94. Qualitative analysis of the dynamics of the time-delayed Chua's circuit

    Article • IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications, June 1997, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  95. Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models

    Article • IEEE Transactions on Microwave Theory and Techniques, May 1997, Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  96. On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal conductivity

    Article • Solid-State Electronics, July 1995, Elsevier

    prof. Fabrizio Bonani

  97. An extended fukui-like formula for the minimum-noise figure of microwave fets

    Article • Microwave and Optical Technology Letters, August 1994, Wiley

    prof. Fabrizio Bonani

  98. High-field diffusivity and noise spectra in GaAs MESFETs

    Article • Journal of Physics D Applied Physics, February 1994, Institute of Physics Publishing

    prof. Fabrizio Bonani

  99. A new analytical model for high frequency MOSFET noise

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani

  100. A new dynamic, self-consistent electro-thermal model of power HBTs and a novel interpretation of thermal collapse loci in multi-finger devices

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    prof. Fabrizio Bonani