All Stories

  1. Study of single-layer stacking faults in 4H–SiC by deep level transient spectroscopy

    Article • Applied Physics Letters, April 2020, American Institute of Physics

    Eugene Yakimov

  2. Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra

    Article • Applied Physics Letters, July 2019, American Institute of Physics

    Eugene Yakimov, Alexey Chernykh

  3. Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

    Article • APL Materials, June 2019, American Institute of Physics

    Eugene Yakimov, Alexey Chernykh

  4. Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

    Article • APL Materials, May 2019, American Institute of Physics

    Eugene Yakimov, Alexey Chernykh

  5. Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions

    Article • Journal of Applied Physics, March 2019, American Institute of Physics

    Eugene Yakimov, Alexey Chernykh

  6. Recombination Processes in 4H-SiC pn Structures

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Eugene Yakimov, Anatoly Strel'chuk

  7. Characterization of Si Convertors of Beta-Radiation in the Scanning Electron Microscope

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Eugene Yakimov

  8. Spatial Distribution of the Dislocation Trails in Silicon

    Article • Solid State Phenomena, October 2015, Trans Tech Publications

    Eugene Yakimov, Valery I Orlov

  9. Characterization of 4H-SiC pn Structures with Unstable Excess Current

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Eugene Yakimov, Anatoly Strel'chuk