All Stories

  1. Excellent passivation of germanium surfaces by POx/Al2O3 stacks

    Article • Applied Physics Letters, August 2023, American Institute of Physics

    Professor Erwin Kessels

  2. Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate

    Article • Applied Physics Letters, July 2020, American Institute of Physics

    Professor Erwin Kessels

  3. Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3

    Article • Applied Physics Letters, August 2019, American Institute of Physics

    Professor Erwin Kessels

  4. Silicon surface passivation by transparent conductive zinc oxide

    Article • Journal of Applied Physics, March 2019, American Institute of Physics

    Professor Erwin Kessels

  5. Strategies to facilitate the formation of free standing MoS2 nanolayers on SiO2 surface by atomic layer deposition: A DFT study

    Article • APL Materials, November 2018, American Institute of Physics

    Professor Erwin Kessels

  6. Encapsulation method for atom probe tomography analysis of nanoparticles

    Article • Ultramicroscopy, December 2015, Elsevier

    Professor Erwin Kessels

  7. Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO

    Article • Journal of Materials Chemistry C, January 2015, Royal Society of Chemistry

    Professor Erwin Kessels

  8. Atomic Layer Deposition

    Article • January 2015, Elsevier

    Professor Erwin Kessels

  9. List of Contributors

    Article • January 2015, Elsevier

    Professor Erwin Kessels

  10. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    Article • Semiconductor Science and Technology, October 2014, Institute of Physics Publishing

    Professor Erwin Kessels

  11. Preface to theCVDSpecial Issue: Atomic-Scale-Engineered Materials (ASEM)

    Article • Chemical Vapor Deposition, September 2014, Wiley

    Professor Erwin Kessels

  12. Identifying parasitic current pathways in CIGS solar cells by modelling dark JV response

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  13. On the role of nanoporosity in controlling the performance of moisture permeation barrier layers

    Article • Microporous and Mesoporous Materials, April 2014, Elsevier

    Professor Erwin Kessels

  14. Second-harmonic intensity and phase spectroscopy as a sensitive method to probe the space-charge field in Si(100) covered with charged dielectrics

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2014, American Vacuum Society

    Professor Erwin Kessels

  15. Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells

    Article • Solar Energy Materials and Solar Cells, January 2014, Elsevier

    Professor Erwin Kessels

  16. Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2014, American Vacuum Society

    Professor Erwin Kessels

  17. Energy-enhanced atomic layer deposition for more process and precursor versatility

    Article • Coordination Chemistry Reviews, December 2013, Elsevier

    Professor Erwin Kessels

  18. C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  19. History of atomic layer deposition and its relationship with the American Vacuum Society

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2013, American Vacuum Society

    Professor Erwin Kessels

  20. Thermal effusion measurements: Probing hydrogen in surface passivation schemes

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  21. Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  22. Co3O4 as anode material for thin film micro-batteries prepared by remote plasma atomic layer deposition

    Article • Journal of Power Sources, April 2012, Elsevier

    Professor Erwin Kessels

  23. Plasma Atomic Layer Deposition

    Article • January 2012, Wiley

    Professor Erwin Kessels

  24. Impact of the Deposition and Annealing Temperature on the Silicon Surface Passivation of ALD Al2O3 Films

    Article • Energy Procedia, January 2012, Elsevier

    Professor Erwin Kessels

  25. Advanced process technologies: Plasma, direct-write, atmospheric pressure, and roll-to-roll ALD

    Article • MRS Bulletin, November 2011, Cambridge University Press

    Professor Erwin Kessels

  26. Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating

    Article • IEEE Transactions on Components Packaging and Manufacturing Technology, November 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  27. Plasma-enhanced atomic layer deposition of titania on alumina for its potential use as a hydrogen-selective membrane

    Article • Journal of Membrane Science, August 2011, Elsevier

    Professor Erwin Kessels

  28. (Invited) Aluminum Oxide and Other ALD Materials for Si Surface Passivation

    Article • January 2011, The Electrochemical Society

    Professor Erwin Kessels

  29. Plasma-Assisted Atomic Layer Deposition of SrTiO

    Article • January 2011, The Electrochemical Society

    Professor Erwin Kessels

  30. Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO

    Article • January 2011, The Electrochemical Society

    Professor Erwin Kessels

  31. High surface passivation quality and thermal stability of ALD Al2O3 on wet chemical grown ultra-thin SiO2 on silicon

    Article • Energy Procedia, January 2011, Elsevier

    Professor Erwin Kessels

  32. Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

    Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  33. Expanding Thermal Plasma deposited a-Si:H thin films for surface passivation of c-Si wafers

    Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  34. Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALD

    Article • Inorganica Chimica Acta, April 2010, Elsevier

    Chris Blackman, Professor Erwin Kessels, Claire Carmalt

  35. Firing stability of atomic layer deposited Al2O3 for c-Si surface passivation

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  36. Electric field induced surface passivation of Si by atomic layer deposited Al2O3 studied by optical second-harmonic generation

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  37. The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  38. Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

    Article • Thin Solid Films, April 2009, Elsevier

    Professor Erwin Kessels

  39. Towards High Energy Density 3D-integrated Lithium-ion Micro-batteries

    Article • MRS Proceedings, January 2009, Cambridge University Press

    Professor Erwin Kessels

  40. Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  41. The atomic hydrogen flux during microcrystalline silicon solar cell deposition

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  42. Atomic-layer-deposited aluminum oxide for the surface passivation of high-efficiency silicon solar cells

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  43. Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

    Article • Thin Solid Films, January 2008, Elsevier

    Professor Erwin Kessels

  44. Oxidized ALD-deposited Titanium Nitride Films as a Low-temperature Alternative for Enhancing the Wettability of Through-Silicon Vias (TSVs)

    Article • January 2008, Cambridge University Press

    Professor Erwin Kessels

  45. Microcrystalline silicon deposition: Process stability and process control

    Article • Thin Solid Films, July 2007, Elsevier

    Professor Erwin Kessels

  46. Hidden parameters in the plasma deposition of microcrystalline silicon solar cells

    Article • Journal of Materials Research, July 2007, Cambridge University Press

    Professor Erwin Kessels

  47. On the H-exchange of ammonia and silica hydroxyls in the presence of Rh nanoparticles

    Article • Applied Surface Science, January 2007, Elsevier

    Professor Erwin Kessels

  48. Deposition of TiN and TaN by Remote Plasma ALD for Diffusion Barrier Applications

    Article • January 2007, The Electrochemical Society

    Professor Erwin Kessels

  49. Opportunities for Plasma-Assisted Atomic Layer Deposition

    Article • January 2007, The Electrochemical Society

    Professor Erwin Kessels

  50. Remote Plasma and Thermal ALD of Al2O3 for Trench Capacitor Applications

    Article • January 2007, The Electrochemical Society

    Professor Erwin Kessels

  51. Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor

    Article • January 2007, The Electrochemical Society

    Professor Erwin Kessels

  52. ALD Options for Si-integrated Ultrahigh-density Decoupling Capacitors in Pore and Trench Designs

    Article • January 2007, The Electrochemical Society

    Professor Erwin Kessels

  53. Ammonia adsorption and decomposition on silica supported Rh nanoparticles observed by in situ attenuated total reflection infrared spectroscopy

    Article • Applied Surface Science, November 2006, Elsevier

    Professor Erwin Kessels

  54. The role of plasma induced substrate heating during high rate deposition of microcrystalline silicon solar cells

    Article • Thin Solid Films, July 2006, Elsevier

    Professor Erwin Kessels

  55. High-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique

    Article • Journal of Non-Crystalline Solids, June 2006, Elsevier

    Professor Erwin Kessels

  56. Substrate temperature dependence of the roughness evolution of HWCVD a-Si:H studied by real-time spectroscopic ellipsometry

    Article • Thin Solid Films, April 2006, Elsevier

    Professor Erwin Kessels

  57. Real-time study of HWCVD a-Si:H film growth using optical second harmonic generation spectroscopy

    Article • Thin Solid Films, April 2006, Elsevier

    Professor Erwin Kessels

  58. In Situ Defect Spectroscopy: Probing Dangling Bonds During a-Si: H Film Growth by Subgap Absorption

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  59. Good Surface Passivation of C-SI by High Rate Plasma Deposited Silicon Oxide

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  60. Highly Efficient Microcrystalline Silicon Solar Cells Deposited from a Pure SiH4 Flow

    Article • MRS Proceedings, January 2006, Cambridge University Press

    Professor Erwin Kessels

  61. A Real-Time Study of the a-Si:H/c-Si Interface Formation using Ellipsometry, Infrared Spectroscopy, and Second Harmonic Generation

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  62. Flexible a-Si/μc-Si Tandem Modules in the Helianthos Project

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  63. High-Quality Surface Passivation Obtained by High-Rate Deposited Silicon Nitride, Silicon Dioxide and Amorphous Silicon using the Versatile Expanding Thermal Plasma Technique

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  64. High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique

    Article • January 2006, The Electrochemical Society

    Professor Erwin Kessels

  65. High rate (∼3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (<150 °C) using the expanding thermal plasma and substrate biasing

    Article • Thin Solid Films, July 2005, Elsevier

    Professor Erwin Kessels

  66. Plasma-surface interaction and surface diffusion during silicon-based thin-film growth

    Article • IEEE Transactions on Plasma Science, April 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  67. Recent advances in evanescent-wave cavity ring-down spectroscopy

    Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  68. HIGH-RATE SILICON NITRIDE DEPOSITION FOR PHOTOVOLTAICS: FROM FUNDAMENTALS TO INDUSTRIAL APPLICATION

    Article • High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes, January 2005, Begell House

    Professor Erwin Kessels

  69. Analysis of a-Si:H subgap absorption spectra obtained from absolute cavity ringdown absorption spectroscopy using an empirical DOS model

    Article • Journal of Non-Crystalline Solids, June 2004, Elsevier

    Professor Erwin Kessels

  70. Optical spectroscopy of the density of gap states in ETP-deposited a-Si:H

    Article • Journal of Non-Crystalline Solids, June 2004, Elsevier

    Professor Erwin Kessels

  71. The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH3 radicals via an Eley–Rideal mechanism

    Article • Journal of Non-Crystalline Solids, June 2004, Elsevier

    Professor Erwin Kessels

  72. The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma

    Article • Journal of Non-Crystalline Solids, June 2004, Elsevier

    Professor Erwin Kessels

  73. External rf substrate biasing during a-Si:H film growth using the expanding thermal plasma technique

    Article • MRS Proceedings, January 2004, Cambridge University Press

    Professor Erwin Kessels

  74. New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

    Article • MRS Proceedings, January 2004, Cambridge University Press

    Professor Erwin Kessels

  75. Roughness evolution of high-rate deposited a-SiNx:H films studied by atomic force microscopy and real time spectroscopic ellipsometry

    Article • MRS Proceedings, January 2004, Cambridge University Press

    Professor Erwin Kessels

  76. Expanding thermal plasma for low-k dielectrics: engineering the film chemistry by means of specific dissociation paths in the plasma

    Article • Materials Science in Semiconductor Processing, January 2004, Elsevier

    Professor Erwin Kessels

  77. Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

    Article • Surface Science, December 2003, Elsevier

    Professor Erwin Kessels

  78. Surface hydride composition of plasma deposited hydrogenated amorphous silicon: in situ infrared study of ion flux and temperature dependence

    Article • Surface Science, April 2003, Elsevier

    Professor Erwin Kessels

  79. Time-resolved cavity ring-down spectroscopic study of the gas phase and surface loss rates of Si and SiH3 plasma radicals

    Article • Chemical Physics Letters, July 2002, Elsevier

    Professor Erwin Kessels

  80. Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H

    Article • Journal of Non-Crystalline Solids, April 2002, Elsevier

    Professor Erwin Kessels

  81. Wall-association processes in expanding thermal hydrogen plasmas

    Article • IEEE Transactions on Plasma Science, February 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  82. On the growth mechanism of a-Si:H

    Article • Thin Solid Films, February 2001, Elsevier

    Professor Erwin Kessels

  83. High-rate deposition of a-SiNx:H films for photovoltaic applications

    Article • MRS Proceedings, January 2001, Cambridge University Press

    Professor Erwin Kessels

  84. Material properties and growth process of microcrystalline silicon with growth rates in excess of 1 nm/s

    Article • MRS Proceedings, January 2001, Cambridge University Press

    Professor Erwin Kessels

  85. Cavity ring down detection of SiH3 on the broadband à 2A1′ ← X̃ 2A1 transition in a remote Ar–H2–SiH4 plasma

    Article • Chemical Physics Letters, August 2000, Elsevier

    Professor Erwin Kessels

  86. High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application

    Article • Journal of Non-Crystalline Solids, May 2000, Elsevier

    Professor Erwin Kessels

  87. Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

    Article • MRS Proceedings, January 2000, Cambridge University Press

    Professor Erwin Kessels

  88. The Role of H in the Growth Mechanism of PECVD a-Si:H

    Article • MRS Proceedings, January 1999, Cambridge University Press

    Professor Erwin Kessels

  89. Remote Silane Plasma Chemistry Effects and their Correlation with a-Si:H Film Properties

    Article • MRS Proceedings, January 1999, Cambridge University Press

    Professor Erwin Kessels

  90. Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H

    Article • Journal of Non-Crystalline Solids, May 1998, Elsevier

    Professor Erwin Kessels

  91. Hydrogen in a-Si:H Deposited by an Expanding Thermal Plasma: A Temperature, Growth Rate and Isotope Study

    Article • MRS Proceedings, January 1998, Cambridge University Press

    Professor Erwin Kessels

  92. A model for the deposition of a-C:H using an expanding thermal arc

    Article • Surface and Coatings Technology, January 1998, Elsevier

    Professor Erwin Kessels

  93. High-rate microcrystalline silicon for solar cells

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  94. Controlling the silicon nitride film density for ultrahigh-rate deposition of top quality antireflection coatings

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  95. Plasma properties of a novel commercial plasma source for high-throughput processing of c-Si solar cells

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  96. External rf substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  97. High-rate (< 1 nm/s) plasma deposited a-SiN/sub x/:H films for mc-Si solar cell application

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  98. On combining surface and bulk passivation of SiN/sub x/:H layers for mc-Si solar cells

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Erwin Kessels

  99. Deep Reactive Ion Etching of Through Silicon Vias

    Article • Wiley

    Professor Erwin Kessels