All Stories

  1. E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks

    Article • Frontiers in Human Neuroscience, January 2025, American Institute of Physics

    Ding Wang

  2. Rethinking polarization in wurtzite semiconductors

    Article • Frontiers in Human Neuroscience, June 2024, American Institute of Physics

    Ding Wang

  3. Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0.2Al0.45Ga0.35N

    Article • Frontiers in Human Neuroscience, May 2024, American Institute of Physics

    Ding Wang

  4. Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities

    Article • Frontiers in Human Neuroscience, April 2024, American Institute of Physics

    Ding Wang

  5. Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers

    Article • Frontiers in Human Neuroscience, September 2023, American Institute of Physics

    Ding Wang

  6. Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN

    Article • APL Materials, December 2022, American Institute of Physics

    Ding Wang

  7. Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy

    Article • Frontiers in Human Neuroscience, July 2022, American Institute of Physics

    Ding Wang