All Stories

  1. Why FETs detect a THz signal at a frequency far beyond their amplifying capabilities

    Article • Opto-Electronics Review, October 2024, Polish Academy of Sciences Chancellery

    Dr Daniel Tomaszewski

  2. Thermoemission-Based Model of THz Detection and Its Validation—JLFET Case Studies

    Article • IEEE Transactions on Terahertz Science and Technology, November 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  3. A new method for characterization of gate overlap capacitances and effective channel size in MOSFETs

    Article • Solid-State Electronics, September 2019, Elsevier

    Dr Daniel Tomaszewski

  4. FOSS EKV2.6 Verilog-A Compact MOSFET Model

    Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  5. New design of the cantilevers for radiation pressure investigations

    Article • Microelectronic Engineering, December 2018, Elsevier

    Dr Daniel Tomaszewski

  6. THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy

    Article • Opto-Electronics Review, December 2018, Polish Academy of Sciences Chancellery

    Dr Daniel Tomaszewski

  7. Application of High-Resistivity Silicon Substrate for Fabrication of MOSFET-Based THz Radiation Detectors

    Article • Acta Physica Polonica A, October 2018, Institute of Physics, Polish Academy of Sciences

    Dr Daniel Tomaszewski

  8. Cascode Enhanced Junctionless Field Effect Transistor THz Detector

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  9. Field Effect Transistors Based Terahertz Detectors 25 Years History, State of the Art and Future Directions

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  10. An Effect of Device Topology in VeSTIC Process on Logic Circuit Operation A Study Based on Ring Oscillator Operation Analysis

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  11. A test structure for characteriation of the shallow piezoresistor-based strain sensors

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  12. Detection of THz radiation by SOI sensors influence of doping and polarization on output signal

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  13. Electrical characterization of different types of transistors fabricated in VeSTIC process

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  14. FDSOI MOSFET threshold voltage characterization based on AC simulation and measurements

    Article • April 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  15. MOSFETs in the VeSTIC process - fabrication and characterization

    Article • April 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  16. Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements

    Article • Solid-State Electronics, February 2017, Elsevier

    Dr Daniel Tomaszewski

  17. A test structure for investigation of junctionless FETs as THz radiation sensors

    Article • December 2016, SPIE

    Dr Daniel Tomaszewski

  18. Bipolar transistor in VESTIC technology: prototype

    Article • December 2016, SPIE

    Dr Daniel Tomaszewski

  19. An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors

    Article • Acta Physica Polonica A, November 2016, Institute of Physics, Polish Academy of Sciences

    Dr Daniel Tomaszewski

  20. FET based THz detector with integrated antenna and source follower

    Article • September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  21. FOSS as an efficient tool for extraction of MOSFET compact model parameters

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  22. Development and Modeling of Thermal Energy Harvesting Setup

    Article • Journal of Nano Research, February 2016, Trans Tech Publications

    Dr Daniel Tomaszewski

  23. A method for combined characterization of MOSFET threshold voltage and junction capacitance eliminating channel current effect

    Article • January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  24. Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy

    Article • Micron, December 2015, Elsevier

    Dr Daniel Tomaszewski

  25. Specialized MEMS microphone for industrial application

    Article • November 2015, Springer Science + Business Media

    Dr Daniel Tomaszewski

  26. Silicon junctionless field effect transistors as room temperature terahertz detectors

    Article • Journal of Applied Physics, September 2015, American Institute of Physics

    Dr Daniel Tomaszewski

  27. Simple methods of threshold voltage parameter extraction for MOSFET models

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  28. Qucs-based development of an energy harvester compact model

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  29. FOSS EKV 2.6 parameter extractor

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  30. A simple method for characterization of MOSFET serial resistance asymmetry

    Article • March 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  31. Thermal energy harvesters with piezoelectric or electrostatic transducer

    Article • August 2014, SPIE

    Dr Daniel Tomaszewski

  32. A simple multi-purpose method for compact model evaluation

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  33. Fabrication and characterization of junctionless MOSFETs for sensor applications

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  34. CMOS Readout Circuit Integrated with Ionizing Radiation Detectors

    Article • International Journal of Electronics and Telecommunications, March 2014, Polish Academy of Sciences Chancellery

    Dr Daniel Tomaszewski

  35. SOI-Based Microsensors

    Article • January 2014, Springer Science + Business Media

    Dr Daniel Tomaszewski

  36. Adjustment of sensivity of ISFET-type micro- and nanosensors

    Article • July 2013, SPIE

    Dr Daniel Tomaszewski

  37. On-wafer measurements and characterization of poly-si resistors for evaluation of selected CMOS manufacturing processes

    Article • July 2013, SPIE

    Dr Daniel Tomaszewski

  38. From FinFET to nanowire ISFET

    Article • September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  39. Compact/SPICE Modeling

    Article • February 2012, Springer Science + Business Media

    Dr Daniel Tomaszewski

  40. Development of Si Nanowire Chemical Sensors

    Article • Procedia Engineering, January 2012, Elsevier

    Dr Daniel Tomaszewski

  41. Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

    Article • Acta Physica Polonica A, November 2011, Institute of Physics, Polish Academy of Sciences

    Dr Daniel Tomaszewski

  42. Non-Standard FinFET Devices for Small Volume Sample Sensors

    Article • Advanced Materials Research, July 2011, Trans Tech Publications

    Dr Daniel Tomaszewski

  43. Development and characterisation of nanowire-based FETs

    Article • Microelectronics Reliability, July 2011, Elsevier

    Dr Daniel Tomaszewski

  44. Transcutaneous Blood Capnometry Sensor Head Based on a Back-Side Contacted ISFET

    Article • January 2011, Springer Science + Business Media

    Dr Daniel Tomaszewski

  45. Spin related effect in Terahertz photovoltaic response of Si-MOSFETs

    Article • September 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  46. Double-fin FETs based on standard CMOS approach

    Article • Microelectronic Engineering, May 2010, Elsevier

    Dr Daniel Tomaszewski

  47. Investigation of the S-PIN Diodes for Silicon Monolithic Antennas With Reconfigurable Aperture

    Article • IEEE Transactions on Microwave Theory and Techniques, May 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  48. Simulation of electrical parameters of new design of SLHC silicon sensors for large radii

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, May 2010, Elsevier

    Dr Daniel Tomaszewski

  49. Development of a Monolithic Active Pixel Sensor Using SOI Technology With a Thick Device Layer

    Article • IEEE Transactions on Nuclear Science, February 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  50. Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

    Article • Solid-State Electronics, December 2008, Elsevier

    Dr Daniel Tomaszewski

  51. Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  52. Development of MPW Service for Academies Based on ITE Proprietary CMOS Process

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  53. Fabrication of MOS - Compatible Ion - Sensitive Devices for Water Pollution Monitoring (Warmer)

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  54. Full-size monolithic active pixel sensors in SOI technology—Design considerations, simulations and measurements results

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, November 2006, Elsevier

    Dr Daniel Tomaszewski

  55. The SUCIMA project: A status report on high granularity dosimetry and proton beam monitoring

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, May 2006, Elsevier

    Professor Luigi P. Badano, Dr Daniel Tomaszewski

  56. Prototypes of large-scale SOI monolithic active pixel sensors

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, May 2006, Elsevier

    Dr Daniel Tomaszewski

  57. Technology development for SOI monolithic pixel detectors

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, May 2006, Elsevier

    Dr Daniel Tomaszewski

  58. Silicon Ultra fast Cameras for electron and γ sources In Medical Applications: a progress report

    Article • Nuclear Physics B - Proceedings Supplements, January 2006, Elsevier

    Professor Luigi P. Badano, Dr Daniel Tomaszewski

  59. Monolithic silicon pixel detectors in SOI technology

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, September 2005, Elsevier

    Dr Daniel Tomaszewski

  60. Monolithic active pixel sensor realized in SOI technology—concept and verification

    Article • Microelectronics Reliability, July 2005, Elsevier

    Dr Daniel Tomaszewski

  61. Application of ion implantation for mono-Si piezoresistors manufacturing in silicon MEMS technology

    Article • Vacuum, May 2005, Elsevier

    Dr Daniel Tomaszewski

  62. Monolithic active pixel detector realized in silicon on insulator technology

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, December 2004, Elsevier

    Dr Daniel Tomaszewski

  63. SILICON PAD DETECTORS FOR AN ELECTROMAGNETIC CALORIMETER AT FUTURE LINEAR COLLIDER EXPERIMENTS: CHARACTERISATION AND TEST BEAM RESULTS

    Article • July 2004, World Scientific Pub Co Pte Lt

    Dr Daniel Tomaszewski

  64. SOI active pixel detectors of ionizing radiation-technology and design development

    Article • IEEE Transactions on Nuclear Science, June 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  65. Position-sensitive silicon detectors for real-time dosimetry in medical applications

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, February 2004, Elsevier

    Professor Luigi P. Badano, Dr Daniel Tomaszewski

  66. Hybrid active pixel sensors and SOI inspired option

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, September 2003, Elsevier

    Dr Daniel Tomaszewski

  67. SUCIMA - Silicon Ultra fast Cameras for electron and gamma sources in Medical Applications

    Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Luigi P. Badano, Dr Daniel Tomaszewski

  68. Charge sharing modeling in pixel detectors with capacitive charge division

    Article • IEEE Transactions on Electron Devices, January 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski

  69. DC and AC Models of Partially-Depleted SOI MOSFETs in Weak Inversion

    Article • January 2002, Springer Science + Business Media

    Dr Daniel Tomaszewski

  70. An efficient approach to the measurement and characterization of MOSFET capacitances

    Article • Microelectronics Reliability, June 2000, Elsevier

    Dr Daniel Tomaszewski

  71. Influence of Silicon Film Parameters on C-V Characteristics of Partially Depleted SOI MOSFETs.

    Article • January 2000, Springer Science + Business Media

    Dr Daniel Tomaszewski

  72. Optimized Diode Analysis of Electrical Silicon Substrate Properties

    Article • Journal of The Electrochemical Society, June 1998, The Electrochemical Society

    Dr Daniel Tomaszewski

  73. Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes

    Article • Solid State Phenomena, July 1997, Trans Tech Publications

    Dr Daniel Tomaszewski

  74. Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation

    Article • Springer Science + Business Media

    Dr Daniel Tomaszewski

  75. Fully depleted monolithic active pixel sensor in SOI technology

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Daniel Tomaszewski