All Stories

  1. Point defects in wide bandgap semiconductor crystals: β-Ga2O3

    Article • Journal of Applied Physics, July 2024, American Institute of Physics

    Christopher Dawe

  2. The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

    Article • Journal of Applied Physics, May 2024, American Institute of Physics

    Christopher Dawe