All Stories

  1. Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers

    Article • Applied Physics Letters, January 2024, American Institute of Physics

    Arkka Bhattacharyya

  2. Influences of Orientation and Remote O2 Plasma Exposure on the Interface Properties of SiO2/β-Ga2O3 MOS Capacitors

    Article • IEEE Transactions on Electron Devices, March 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Arkka Bhattacharyya

  3. Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers

    Article • APL Materials, February 2023, American Institute of Physics

    Arkka Bhattacharyya

  4. Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga2O3 films

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2023, American Vacuum Society

    Arkka Bhattacharyya

  5. β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit

    Article • IEEE Electron Device Letters, December 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Arkka Bhattacharyya

  6. Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes

    Article • APL Materials, November 2022, American Institute of Physics

    Arkka Bhattacharyya

  7. High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2

    Article • IEEE Electron Device Letters, October 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Arkka Bhattacharyya

  8. Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films

    Article • IEEE Electron Device Letters, October 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Arkka Bhattacharyya

  9. On the terahertz response of metal-gratings on anisotropic dielectric substrates and its prospective application for anisotropic refractive index characterization

    Article • Journal of Applied Physics, May 2022, American Institute of Physics

    Arkka Bhattacharyya

  10. 4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−2

    Article • Applied Physics Express, May 2022, Institute of Physics Publishing

    Arkka Bhattacharyya

  11. Electronic and ionic conductivity in β-Ga2O3 single crystals

    Article • Journal of Applied Physics, February 2022, American Institute of Physics

    Mrs Leila Ghadbeigi, Professor John S McCloy, Arkka Bhattacharyya

  12. Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²

    Article • IEEE Electron Device Letters, September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Arkka Bhattacharyya

  13. In Situ Dielectric Al 2 O 3 /β‐Ga 2 O 3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

    Article • Advanced Electronic Materials, August 2021, Wiley

    Arkka Bhattacharyya

  14. High-k Oxide Field-Plated Vertical (001) β-Ga2O3Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2

    Article • IEEE Electron Device Letters, August 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Arkka Bhattacharyya

  15. 130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts

    Article • Applied Physics Express, June 2021, Institute of Physics Publishing

    Arkka Bhattacharyya

  16. N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, May 2021, American Vacuum Society

    Arkka Bhattacharyya

  17. Oxygen annealing induced changes in defects within β-Ga2O3 epitaxial films measured using photoluminescence

    Article • Journal of Physics D Applied Physics, February 2021, Institute of Physics Publishing

    Arkka Bhattacharyya

  18. Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β-Ga2O3 crystals

    Article • Applied Physics Letters, November 2020, American Institute of Physics

    Arkka Bhattacharyya

  19. Compensation in ( 2 ¯ 01 ) homoepitaxial β-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy

    Article • Journal of Applied Physics, November 2020, American Institute of Physics

    Arkka Bhattacharyya

  20. Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown

    Article • IEEE Transactions on Electron Devices, November 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Arkka Bhattacharyya

  21. Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy

    Article • Applied Physics Letters, October 2020, American Institute of Physics

    Arkka Bhattacharyya

  22. Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window

    Article • Applied Physics Letters, October 2020, American Institute of Physics

    Arkka Bhattacharyya

  23. Degenerate doping in β-Ga2O3 single crystals through Hf-doping

    Article • Semiconductor Science and Technology, March 2020, Institute of Physics Publishing

    Arkka Bhattacharyya

  24. Schottky Barrier Height Engineering inβ-Ga2O3Using SiO2Interlayer Dielectric

    Article • IEEE Journal of the Electron Devices Society, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Arkka Bhattacharyya